Patents by Inventor Toshiharu Yambayashi

Toshiharu Yambayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100215563
    Abstract: The invention provides a method for producing silicon. The method for producing silicon is a method wherein a halogenated silane represented by the following formula (1) is reduced with a metal, the method comprising a first step of bringing metal particles into contact with a halogenated silane at a temperature T1 below the melting point of the metal to obtain silicon, and a second step following the first step, of bringing the metal residue into contact with a halogenated silane at a temperature T2 at or above the melting point of the metal to obtain additional silicon. SiHnX4-n??(1) In the formula, n represents an integer of 0-3 and X represents an atom selected from the group consisting of F, Cl, Br and I. When n is 0-2, X may be the same or different.
    Type: Application
    Filed: August 28, 2008
    Publication date: August 26, 2010
    Inventor: Toshiharu Yambayashi