Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Abstract: This invention relates to a constant voltage output circuit using, as its reference potential source, power source feed terminals for feeding a power source voltage to a reference potential source of a given circuit. The constant voltage output circuit includes a series circuit of an npn transistor and a pnp transistor interposed between the reference potential source of the given circuit and the power source feed terminals, means for biasing the base potential of the pnp transistor by a predetermined potential with respect to the potential of the power source feed terminals, and an emitter follower circuit disposed in the collector output circuit of the npn transistor of the series circuit, and forming a negative feed-back circuit.

Abstract: The present invention is related to a temperature-compensated circuit for controlling the drive of a motor, comprising a differential comparator for comparing a running-speed signal of a motor with a reference signal, and a feedback amplifier having a differential amplifier to which is given an input offset.

Abstract: A differential amplification is disclosed which comprises differential paired transistors. The direct bias current flowing in the differential paired transistors is determined by a constant current flowing from a first constant current circuit connected to the emitters of the differential paired transistors. The collector current of one of the differential paired transistors is caused to flow as an input current in a high-precision current mirror circuit. The current value of the constant current flowing in the first constant current circuit is set at 2Io. Since a direct base current Ib flows in the differential paired transistors, the current value of the collector current of one of the differential paired transistors is (Io-Ib). Accordingly, the high-precision current mirror circuit generates an output current of a current value of (Io-Ib) at the output terminal thereof.