Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

Abstract: An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Abstract: An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

Abstract: A display device including a substrate having a first TFT of an oxide semiconductor and a second TFT of a polysilicon semiconductor comprising: the oxide semiconductor 109 is covered by a first insulating film, a first drain electrode 110 is connected to the oxide semiconductor 109 via a first through hole 132 formed in the first insulating film, a first source electrode 111 is connected to the oxide semiconductor 109 via second through hole 133 formed in the first insulating film in the first TFT, a second insulating film is formed covering the first drain electrode 110 and the first source electrode 111, a drain wiring connects 12 to the first drain electrode 110 via a third through hole 130 formed in the second insulating film, a source wiring 122 is connected to the first source electrode 111 via a fourth through hole 131 formed in the second insulating film.

Abstract: A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

Abstract: The purpose of the present invention is to increase ON current of the oxide semiconductor thin film transistor. An example of the structure that attains the purpose is: a display device having a substrate and a thin film transistor of an oxide semiconductor formed on the substrate including: a thickness of a source region and a drain region is thicker than a thickness of a channel region of the oxide semiconductor, the channel region has projections at portions contacting the source region and the drain region, a thickness of the projection is thicker than a thickness of the center of the channel region, and a thickness of the projection is thicker than a thickness of the source region and the drain region.