Abstract: A membrane switch in which a first conductive part is formed on a first substrate, a second conductive part is formed on a second substrate, and the substrates are layered via a spacer such that the conductive parts face each other with a space therebetween, and an organic material showing piezoelectricity is filled, or disposed in the space such that an air gap is present, are useful for obtaining an output signal corresponding to an applied pressure.

Abstract: Ferroelectric memory elements which contain a poly ?-amino acid which is a copolymer containing a glutamic acid-?-ester unit represented by the formula (I), defined herein, and a glutamic acid-?-ester unit represented by the formula (II), defined herein, in a molar ratio of units of formula (I) to units of formula (II) of 10/90-90/10 are useful as recording elements such as RFID and the like.

Abstract: Poly(?-amino acid) which contain: (A) a glutamic acid ?-ester unit represented by formula (I): and (B) one or more kinds of units selected from a glutamic acid ?-ester unit represented by formula (II), an alanine unit, a phenylalanine unit and an N?-benzyloxycarbonyllysine unit, represented by formula (III), and a glutamic acid ?-ester unit represented by formula (IV) can be dissolved in various solvents and are useful for preparing piezoelectric elements which exhibit superior piezoelectricity.

Abstract: A membrane switch in which a first conductive part is formed on a first substrate, a second conductive part is formed on a second substrate, and the substrates are layered via a spacer such that the conductive parts face each other with a space therebetween, and an organic material showing piezoelectricity is filled, or disposed in the space such that an air gap is present, are useful for obtaining an output signal corresponding to an applied pressure.

Abstract: Provided are a conductive substrate which can be produced from inexpensive materials at a lower temperature than those for conventional substrates, and a process for producing the conductive substrate. The conductive substrate comprises a substrate (1) and a conductive pattern (5) provided on the substrate (1), wherein the conductive pattern (5), except on a surface and in a vicinity thereof on a side opposite to the substrate side, entirely has a structure comprising a binder (2) and fine aluminum grains (3) dispersed therein, and on the surface and in the vicinity a surface metal aluminum layer (4) is formed in which the fine aluminum grains (3) are spread with a roller to form a conductive junction connecting the fine aluminum grains to each other.

Abstract: Poly(?-amino acid) which contain: (A) a glutamic acid ?-ester unit represented by formula (I): and (B) one or more kinds of units selected from a glutamic acid ?-ester unit represented by formula (II), an alanine unit, a phenylalanine unit and an N?-benzyloxycarbonyllysine unit, represented by formula (III), and a glutamic acid ?-ester unit represented by formula (IV) can be dissolved in various solvents and are useful for preparing piezoelectric elements which exhibit superior piezoelectricity.

Abstract: Ferroelectric memory elements which contain a poly ?-amino acid which is a copolymer containing a glutamic acid-?-ester unit represented by the formula (I), defined herein, and a glutamic acid-?-ester unit represented by the formula (II), defined herein, in a molar ratio of units of formula (I) to units of formula (II) of 10/90-90/10 are useful as recording elements such as RFID and the like.

Abstract: Disclosed is a process for producing a silicon oxide or silicon oxynitride thin film having a high level of water vapor and oxygen barrier property and a high strength with a higher efficiency by a solution process which is advantageous in productivity. Also disclosed is a thin film that is obtained by the process and is useful, for example, as a protective film for electric elements such as organic EL elements. A solution containing a smectite group silicate layered compound and a silazane compound is coated onto a surface of a substrate by a liquid phase process to form a film. The thin film thus obtained is exposed to ultraviolet light under an oxygen atmosphere to produce a silicon oxide thin film or a silicon oxynitride compound thin film containing the smectite group silicate layered compound. The smectite group silicate compound is a material represented by the following general formula. A1/3BmSi4O10.

Abstract: An object of the invention is to provide a thermoelectric conversion material that can have a balance between flexibility and high thermoelectric conversion capacity, a thermoelectric conversion element using the material, and a device that uses waste heat of, for example, an electronic apparatus and a vehicle by using the element. Provided is a thermoelectric conversion element that includes a layer constituted by an organic material in which a fine particle of a carbon nanotube is dispersed and which has flexibility, preferably, a high glass transition temperature and low thermal conductivity, and in which a mass ratio of the carbon nanotube to the organic material is 50% by mass to 90% by mass, and a device in which the thermoelectric conversion element is installed to a heat release portion of an apparatus.

Abstract: A conductive pattern forming film provides a pattern formed on a film substrate having flexibility by pressurizing, under heating, a conductive paste in which powder or fine particles of metal or semiconductor are dispersed and filled. A conductive pattern forming apparatus comprises a sample installation table having a flat placement surface, and a driving body for pressure application which is placed in a manner facing the placement surface and movable, wherein the driving body for pressure application is equipped with a support which is constituted by a flat metal panel having metal spheres along its bottom face.

Abstract: Provided are a conductive substrate which can be produced from inexpensive materials at a lower temperature than those for conventional substrates, and a process for producing the conductive substrate. The conductive substrate comprises a substrate (1) and a conductive pattern (5) provided on the substrate (1), wherein the conductive pattern (5), except on a surface and in a vicinity thereof on a side opposite to the substrate side, entirely has a structure comprising a binder (2) and fine aluminum grains (3) dispersed therein, and on the surface and in the vicinity a surface metal aluminum layer (4) is formed in which the fine aluminum grains (3) are spread with a roller to form a conductive junction connecting the fine aluminum grains to each other.

Abstract: Disclosed is a process for producing a silicon oxide or silicon oxynitride thin film having a high level of water vapor and oxygen barrier property and a high strength with a higher efficiency by a solution process which is advantageous in productivity. Also disclosed is a thin film that is obtained by the process and is useful, for example, as a protective film for electric elements such as organic EL elements. A solution containing a smectite group silicate layered compound and a silazane compound is coated onto a surface of a substrate by a liquid phase process to form a film. The thin film thus obtained is exposed to ultraviolet light under an oxygen atmosphere to produce a silicon oxide thin film or a silicon oxynitride compound thin film containing the smectite group silicate layered compound. The smectite group silicate compound is a material represented by the following general formula. A1/3BmSi4O10.

Abstract: The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO2 thin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiO2 thin film formed by coating; a gate electrode; a gate insulating layer of a SiO2 thin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiO2 thin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.

Abstract: An object of the present invention is to provide a semiconductor thin film device which employs a silicon oxide thin film having an equivalent level of high insulating performance to those currently used in electronic devices, through a low-temperature printing process on a plastic substrate having plasticity or other types of substrates at a temperature equal to or lower than the heat resistant temperature of the substrate, and to provide a method for forming the device. The semiconductor thin film device is formed as follows: a coating film of a silicon compound including a silazane structure or a siloxane structure is formed on a plastic substrate having plasticity; the coating film is converted into a silicon oxide thin film; and the thin film is utilized as part of an insulating layer or a sealing layer.

Abstract: The present invention forms a conductive pattern using a simple process on a general plastic substrate having flexibility, and also provides a conductive pattern forming film that allows for easy formation of a conductive pattern using an apparatus that performs a simple process of oriented pressurization at low temperature, as well as a method for forming conductive pattern and a conductive pattern forming apparatus for the same. The conductive pattern forming film provides a pattern formed on a film substrate having flexibility by pressurizing, under heating, a conductive paste in which powder or fine particles of metal or semiconductor are dispersed and filled.

Abstract: The present invention provides a thin film transistor having excellent formability and processability, and particularly a thin film transistor using plastics as a substrate; an organic semiconductor as an active layer; and SiO2 thin films formed by coating as a sealing layer and a gate insulating layer, and a process for producing the same. The present invention provides a field-effect type thin film transistor having an active layer of an organic semiconductor, comprising on a plastic substrate, a sealing layer of a SiO2 thin film formed by coating; a gate electrode; a gate insulating layer of a SiO2 thin film formed by coating; gate and drain electrodes; and a semiconductor active layer. The high-quality SiO2 thin film is obtained by using a silicon compound as a starting material and irradiating a coated thin film of the solution of the starting material with light in an oxygen atmosphere.

Abstract: A thin-film transistor includes a substrate (10), a gate electrode (20) provided on a portion of the substrate, an insulation layer (30) arranged to cover the gate electrode and the substrate, a source or drain (40) provided on the insulation layer in a region corresponding to a region of the gate electrode, a semiconductor layer (50) arranged to cover the source or drain (40) and the insulation layer, a drain or source (60) provided on the semiconductor in a portion of a region corresponding to a region of the source or drain (40) that overlaps with the gate electrode, and a channel (70) formed between the source or drain (40) and the drain or source (60) and having a length defined by a film thickness of the semiconductor layer (50).

Abstract: A thin-film transistor includes a substrate (10), a gate electrode (20) provided on a portion of the substrate, an insulation layer (30) arranged to cover the gate electrode and the substrate, a source or drain (40) provided on the insulation layer in a region corresponding to a region of the gate electrode, a semiconductor layer (50) arranged to cover the source or drain (40) and the insulation layer, a drain or source (60) provided on the semiconductor in a portion of a region corresponding to a region of the source or drain (40) that overlaps with the gate electrode, and a channel (70) formed between the source or drain (40) and the drain or source (60) and having a length defined by a film thickness of the semiconductor layer (50).