Patents by Inventor Toshihide Maeda
Toshihide Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10069042Abstract: A light-emitting components containing body includes plural light-emitting components, a containing body which contains the plural light-emitting components. The containing body contains the plural light-emitting components of the same rank among light-emitting components that are classified into plural ranks according to positional deviations of their light emission portions from their light emission portion reference position.Type: GrantFiled: October 16, 2015Date of Patent: September 4, 2018Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Hiroshi Haji, Toshihide Maeda
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Publication number: 20160138787Abstract: A light-emitting components containing body includes plural light-emitting components, a containing body which contains the plural light-emitting components. The containing body contains the plural light-emitting components of the same rank among light-emitting components that are classified into plural ranks according to positional deviations of their light emission portions from their light emission portion reference position.Type: ApplicationFiled: October 16, 2015Publication date: May 19, 2016Inventors: Hiroshi HAJI, Toshihide MAEDA
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Patent number: 8552444Abstract: Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices.Type: GrantFiled: November 13, 2008Date of Patent: October 8, 2013Assignee: Panasonic CorporationInventors: Yoshiyuki Ide, Hidenori Kamei, Isamu Yonekura, Kunihiko Obara, Koichi Nakahara, Kouji Nakatsu, Yoshirou Tooya, Toshirou Kitazono, Toshihide Maeda, Kenichi Koya, Takahiro Shirahata
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Publication number: 20120146077Abstract: A light emitting device 1 includes a wiring substrate 4 on which a light emitting element 2 is mounted, a sealing section 5 containing a phosphor and sealing the light emitting element 2, a light diffusion section 7 provided on the sealing section 5 and containing particles for diffusing light emitted from the light emitting element 2, and a light reflection section 6 provided so as to cover part of the sealing section 5 other than a top surface of the sealing section 5 and reflecting light emitted from the light emitting element 2. In the light diffusion section 7, silicone dioxide which is a diffusing material is contained in a transparent medium which is a base material. In the light reflection section 6, titanium dioxide which is a reflective material is contained in a transparent medium which is a base material.Type: ApplicationFiled: August 20, 2010Publication date: June 14, 2012Inventors: Koji Nakatsu, Koichi Nakahara, Toshihide Maeda, Toshirou Kitazono, Isamu Yonekura
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Publication number: 20100258830Abstract: Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices.Type: ApplicationFiled: November 13, 2008Publication date: October 14, 2010Inventors: Yoshiyuki Ide, Hidenori Kamei, Isamu Yonekura, Kunihiko Obara, Koichi Nakahara, Kouji Nakatsu, Yoshirou Tooya, Toshirou Kitazono, Toshihide Maeda, Kenichi Koya, Takahiro Shirahata
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Patent number: 7772769Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: GrantFiled: October 19, 2007Date of Patent: August 10, 2010Assignee: Panasonic CorporationInventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Patent number: 7629620Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: GrantFiled: February 9, 2006Date of Patent: December 8, 2009Assignee: Panasonic CorporationInventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Patent number: 7592639Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: GrantFiled: October 25, 2006Date of Patent: September 22, 2009Assignee: Panasonic CorporationInventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Patent number: 7557383Abstract: A lighting apparatus of the present invention comprises: a substrate; a semiconductor light emitting device mounted on the substrate; a resin layer formed on a mounting surface of the substrate and having a lens portion that seals the semiconductor light emitting device; and a reflecting plate. Here, the reflecting plate and the resin layer are positioned with a space therebetween. Herewith, it is possible to offer a lighting apparatus which (i) has high luminance, (ii) causes sufficient heat release, and (iii) is less likely to cause detachment of the resin layer.Type: GrantFiled: September 21, 2004Date of Patent: July 7, 2009Assignee: Panasonic CorporationInventors: Kunihiko Obara, Koji Nakatsu, Hiromi Kitahara, Toshihide Maeda, Hideo Nagai
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Patent number: 7422504Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: GrantFiled: June 3, 2005Date of Patent: September 9, 2008Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Publication number: 20080164482Abstract: In a light emitting apparatus that includes a plurality of semiconductor light emitting devices 2 each having a light emitting face covered with a phosphor layer 3, a semiconductor assembly obtained by assembling a submount and the semiconductor light emitting devices is mounted on the substrate. Accordingly, chromaticity characteristics of the semiconductor assembly can be measured before the semiconductor assembly is mounted on the substrate. Therefore, even if using a plurality of semiconductor light emitting devices, a semiconductor assembly can be prepared on which the semiconductor light emitting devices each having uniform chromaticity characteristics are mounted before the semiconductor assembly is mounted on the substrate. And, a light emitting apparatus having suppressed dispersion of chromaticity can be manufactured.Type: ApplicationFiled: April 27, 2005Publication date: July 10, 2008Inventors: Kunihiko Obara, Toshihide Maeda, Tadashi Yano, Noriyasu Tanimoto
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Publication number: 20080135862Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: ApplicationFiled: October 19, 2007Publication date: June 12, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Patent number: 7294956Abstract: The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.Type: GrantFiled: September 27, 2002Date of Patent: November 13, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara
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Publication number: 20070097684Abstract: A lighting apparatus of the present invention comprises: a substrate; a semiconductor light emitting device mounted on the substrate; a resin layer formed on a mounting surface of the substrate and having a lens portion that seals the semiconductor light emitting device; and a reflecting plate. Here, the reflecting plate and the resin layer are positioned with a space therebetween. Herewith, it is possible to offer a lighting apparatus which (i) has high luminance, (ii) causes sufficient heat release, and (iii) is less likely to cause detachment of the resin layer.Type: ApplicationFiled: September 21, 2004Publication date: May 3, 2007Inventors: Kunihiko Obara, Koji Nakatsu, Hiromi Kitahara, Toshihide Maeda, Hideo Nagai
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Publication number: 20070046169Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: ApplicationFiled: October 25, 2006Publication date: March 1, 2007Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Patent number: 7170221Abstract: The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.Type: GrantFiled: September 27, 2002Date of Patent: January 30, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara
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Publication number: 20060124942Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: ApplicationFiled: February 9, 2006Publication date: June 15, 2006Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Publication number: 20060105708Abstract: An information providing method and apparatus in which a radio wave signal is transmitted from plural artificial satellites and received at plural receiving equipment located within a pre-defined service area, and receiving within a pre-defined range of operational elevation angle by a receiving antenna. The plural artificial satellites are viewable in turn within a pre-defined range of operational elevation angle at an arbitrary location within the pre-defined service area, and an orbit is arranged so that at least one artificial satellite is viewable. Each orbit of the plural artificial satellites is arranged on an individual orbital plane according to a designated service hour. The individual orbit is located in a range where an orbital inclination angle is 63.4 degrees or closer to Japan, and a right ascension of a north-bound node of the individual artificial satellite is separated approximately at regular intervals.Type: ApplicationFiled: December 5, 2005Publication date: May 18, 2006Inventors: Toshihide Maeda, Nobuo Hamano, Shigeki Nakamura, Tomiharu Yoshida, Masataka Owada, Masahiko Ikeda, Takashi Yabutani, Masahiro Ito
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Patent number: 7023019Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1?a1?b1?xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: GrantFiled: September 3, 2002Date of Patent: April 4, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Hidenori Kamei, Yasuyuki Hanada, Kei Sakanoue
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Patent number: RE47453Abstract: A chip-type light-emitting semiconductor device includes: a substrate 4; a blue LED 1 mounted on the substrate 4; and a luminescent layer 3 made of a mixture of yellow/yellowish phosphor particles 2 and a base material 13 (translucent resin). The yellow/yellowish phosphor particles 2 is a silicate phosphor which absorbs blue light emitted by the blue LED 1 to emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (Sr1-a1-b1-xBaa1Cab1Eux)2SiO4 (0?a1?0.3, 0?b1?0.8 and 0<x<1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.Type: GrantFiled: July 5, 2016Date of Patent: June 25, 2019Assignee: Panasonic CorporationInventors: Toshihide Maeda, Shozo Oshio, Katsuaki Iwama, Hiromi Kitahara, Tadaaki Ikeda, Kei Sakanoue, Hidenori Kamei, Yasuyuki Hanada