Patents by Inventor Toshihiko Fukushima

Toshihiko Fukushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070145484
    Abstract: A regulator circuit including an output-stage transistor for supplying a current to an external circuit has an electrostatic protection transistor formed in parallel with the output-stage transistor. The base of the electrostatic protection transistor is connected to, for example, the base of the output-stage transistor, or alternatively to a ground line or to the emitter of the electrostatic protection transistor itself.
    Type: Application
    Filed: November 2, 2006
    Publication date: June 28, 2007
    Inventors: Makoto Hosokawa, Toshihiko Fukushima, Naoki Fukunaga
  • Publication number: 20070063271
    Abstract: In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
    Type: Application
    Filed: August 25, 2006
    Publication date: March 22, 2007
    Inventors: Takahiro Takimoto, Hiroki Nakamura, Toshihiko Fukushima
  • Publication number: 20070000267
    Abstract: A compact heat pump system and a heat pump operation method employs an evaporator for recovering heat of an external heat source to a working medium supplied as liquid water from the exterior via a water feed channel, thereby evaporating the working medium, a compressor for compressing the working medium evaporated in the evaporator and increasing temperature of the evaporated working medium, and a driving unit for giving motive power to drive the compressor. The heat pump system further includes a supply channel for supplying, as a heat source, vapor of the working medium having a temperature increased by the compressor to an external heat-utilizing facility, and a return channel branched from the supply channel and introducing the working medium discharged from the compressor to the evaporator.
    Type: Application
    Filed: June 29, 2006
    Publication date: January 4, 2007
    Inventors: Takanori Shibata, Shigeo Hatamiya, Toshihiko Fukushima
  • Publication number: 20060206369
    Abstract: A collection method and system which restrains an increase in initial cost of energy-saving facilities. According to the invention, the reduced amount of running cost of energy-saving facilities for a predetermined period is computed based on a prediction of operation of the facilities, and an initial cost is determined. Actual operation of the energy-saving facilities is monitored, and stored in a history database. Based on the actual operation, the reduced amount of the running cost is periodically calculated and stored in a database. A business enterpriser draws the amount from the customer's account corresponding to the reduced amount.
    Type: Application
    Filed: May 15, 2006
    Publication date: September 14, 2006
    Inventors: Toshihiko Fukushima, Tadakatsu Nakajima
  • Publication number: 20060157781
    Abstract: The lateral double-diffused MOS transistor includes a drift region of a first conductive type provided on a semiconductor substrate of a second conductive type, and a body diffusion region of the second conductive type formed on the surface within the drift region. The MOS transistor includes a gate electrode formed in such a position as it covers from part of the body diffusion region to part of the drift region located outside the diffusion region via an insulating film. The MOS transistor further includes a source diffusion region of the first conductive type and a drain diffusion region of the first conductive type formed on top of the body diffusion region and top of the drift region, respectively, both of which correspond to both sides of the gate electrode. The drain diffusion region includes a deep diffusion portion which has a 1/1000 or more concentration of a peak concentration of the source diffusion region and which is positioned deeper than the source diffusion region.
    Type: Application
    Filed: January 17, 2006
    Publication date: July 20, 2006
    Inventors: Takahiro Takimoto, Toshihiko Fukushima
  • Publication number: 20060130482
    Abstract: A heat energy supply system and method capable of drastically increasing energy efficiency and energy supply efficiency, as well as a reconstruction method of the heat energy supply system. The heat energy supply system comprises a boiler for heating a heat medium and producing steam including water and other vapors, a heat pump including a steam turbine driven by the steam supplied from the boiler and a heat exchanger for heating the heat medium by employing waste heat or heat obtained from environment, thereby producing the steam at a setting temperature, and a steam supply line for supplying the steam discharged from the steam turbine and the steam heated by the heat exchanger to a heat utilization facility.
    Type: Application
    Filed: December 16, 2005
    Publication date: June 22, 2006
    Inventors: Kooichi Chino, Moriaki Tsukamoto, Toshihiko Fukushima, Shigeo Hatamiya
  • Publication number: 20050258501
    Abstract: A light receiving element includes a substrate; and an epitaxial layer provided on the substrate and containing an impurity diffusion layer extending from a surface of the epitaxial layer to a prescribed depth. The prescribed depth is about 0.3 ?m or less. The impurity diffusion layer contains an impurity at a concentration of less than about 1×1020 cm?3.
    Type: Application
    Filed: August 11, 2003
    Publication date: November 24, 2005
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Kazuhiro Natsuaki, Toshihiko Fukushima
  • Patent number: 6949809
    Abstract: A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: September 27, 2005
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Takahiro Takimoto, Isamu Ohkubo, Masaru Kubo, Hiroki Nakamura, Toshihiko Fukushima, Toshifumi Yoshikawa
  • Publication number: 20050160740
    Abstract: A gas turbine power generator plant, intended to reduce its noise by making small the intake and exhaust outlets of the cooing air channel of a case, comprises an engine core in which a turbine, a compressor and a generator are installed on the same axis, a combustor for burning air for combustion compressed by the compressor and supplying the air to the turbine, a radiator for cooling a coolant or a lubricant, a cooling fan for ventilating the radiator with cooling air, an electric power converter for converting electric power generated by the generator, and the case for housing these constituent elements. And, a combustion air channel passing the compressor, the combustor and the turbine and a cooling air channel passing the radiator, the cooling fan and the electric power converter are formed as mutually independent channels from intake to exhaust.
    Type: Application
    Filed: January 14, 2005
    Publication date: July 28, 2005
    Inventors: Susumu Nakano, Masaya Ichinose, Masanori Watanabe, Kuniyoshi Tsubouchi, Toshihiko Fukushima, Masatoshi Watanabe
  • Patent number: 6846694
    Abstract: A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: January 25, 2005
    Assignees: Sharp Kabushiki Kaisha, Fujitsu Limited
    Inventors: Toshihiko Fukushima, Kazuhiro Natsuaki, Takao Setoyama, Yuji Asano, Morio Katou
  • Patent number: 6828644
    Abstract: A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.
    Type: Grant
    Filed: March 21, 2003
    Date of Patent: December 7, 2004
    Assignees: Fujitsu Limited, Sharp Kabushiki Kaisha
    Inventors: Yuji Asano, Morio Katou, Takao Setoyama, Toshihiko Fukushima, Kazuhiro Natsuaki
  • Patent number: 6748757
    Abstract: In an air conditioner for an automobile, restriction on arrangement of electric apparatus is removed, small-sized and light-weighted formation is achieved by promoting cooling capacity of the electric apparatus by a cooling fluid by an inexpensive constitution and firm defrosting is enabled by closing an air flow path of an exterior heat exchanger. For that purpose, there are provided a refrigeration cycle having an electrically driven compressor and an exterior heat exchanger and a radiator used in an electric automobile having a driving motor for driving the automobile and a motor driving power source for driving the driving motor and connected to cool a heat generating electric apparatus such as the driving motor or the motor driving power source via the cooling fluid, the radiator is arranged in the air flow path of exterior fan and an opening and closing apparatus for opening and closing the air flow path of the exterior heat exchanger is provided.
    Type: Grant
    Filed: November 9, 2001
    Date of Patent: June 15, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Kazuya Matsuo, Kiyoshi Nagasawa, Toshihiko Fukushima
  • Publication number: 20030197190
    Abstract: A first layer is formed on an underlying substrate having a surface layer made of semiconductor of a first conductivity type. The first layer is made of semiconductor having a resistance higher than that of the surface layer. A first impurity diffusion region of a second conductivity type is formed in a partial surface region of the first layer. The first impurity diffusion region does not reach the surface of the underlying substrate. A second impurity diffusion region of the first conductivity type is disposed in the first layer and spaced apart from the first impurity diffusion region. The second impurity diffusion region reaches the surface of the underlying substrate. A separation region is disposed between the first and second impurity diffusion regions. The separation region comprises a trench formed in the first layer and dielectric material disposed at least in a partial internal region of the trench.
    Type: Application
    Filed: March 21, 2003
    Publication date: October 23, 2003
    Inventors: Yuji Asano, Morio Katou, Takao Setoyama, Toshihiko Fukushima, Kazuhiro Natsuaki
  • Publication number: 20030168658
    Abstract: A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.
    Type: Application
    Filed: March 11, 2003
    Publication date: September 11, 2003
    Inventors: Toshihiko Fukushima, Kazuhiro Natsuaki, Takao Setoyama, Yuji Asano, Morio Katou
  • Patent number: 6584793
    Abstract: A cogeneration system in which cold is generated by recovering exhaust heat of a gas turbine for driving a generator to drive a refrigerating machine, and the cold is used for cooling intake air for the gas turbine and as a cold heat source for an air conditioner, wherein there are provided a thermal storage tank for storing the cold generated by the refrigerating machine and an electric energy storage equipment for storing electric energy generated by the generator; and cooling of the intake air for the gas turbine, thermal storage, and electric energy storage are controlled in relation to the load of the air conditioner and the electric power load of the generator.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: July 1, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Toshihiko Fukushima, Tadakatsu Nakajima, Masaaki Ito
  • Patent number: 6580095
    Abstract: A circuit-containing photodetector is provided which can have a high sensitivity and response to light of a short wavelength and can be manufactured in a good yield. The circuit-containing photodetector includes a semiconductor substrate, a semiconductor layer formed thereon, and a conductive impurity region formed in the semiconductor layer for transmitting a signal. In the semiconductor layer, a trench is formed to have a depth to reach the substrate. An impurity region of a photodetector element is formed at the surface of the semiconductor substrate exposed at the bottom of the trench. A signal processing circuit for processing an electric signal from the photodetector element is formed on the semiconductor layer. The conductive impurity region for transmitting the electric signal from the photodetector element is formed to extend from the bottom of the trench to the upper surface of the semiconductor layer.
    Type: Grant
    Filed: June 7, 2001
    Date of Patent: June 17, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiko Tani, Shigeki Hayashida, Tatsuya Morioka, Seizo Kakimoto, Toshihiko Fukushima
  • Publication number: 20030080280
    Abstract: A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.
    Type: Application
    Filed: October 30, 2002
    Publication date: May 1, 2003
    Inventors: Takahiro Takimoto, Isamu Ohkubo, Masaru Kubo, Hiroki Nakamura, Toshihiko Fukushima, Toshifumi Yoshikawa
  • Publication number: 20030051496
    Abstract: A cogeneration system in which cold is generated by recovering exhaust heat of a gas turbine for driving a generator to drive a refrigerating machine, and the cold is used for cooling intake air for the gas turbine and as a cold heat source for an air conditioner, wherein there are provided a thermal storage tank for storing the cold generated by the refrigerating machine and an electric energy storage equipment for storing electric energy generated by the generator; and cooling of the intake air for the gas turbine, thermal storage, and electric energy storage are controlled in relation to the load of the air conditioner and the electric power load of the generator.
    Type: Application
    Filed: January 31, 2002
    Publication date: March 20, 2003
    Inventors: Toshihiko Fukushima, Tadakatsu Nakajima, Masaaki Ito
  • Publication number: 20030019232
    Abstract: In an air conditioner for an automobile, restriction on arrangement of electric apparatus is removed, small-sized and light-weighted formation is achieved by promoting cooling capacity of the electric apparatus by a cooling fluid by an inexpensive constitution and firm defrosting is enabled by closing an air flow path of an exterior heat exchanger. For that purpose, there are provided a refrigeration cycle having an electrically driven compressor and an exterior heat exchanger and a radiator used in an electric automobile having a driving motor for driving the automobile and a motor driving power source for driving the driving motor and connected to cool a heat generating electric apparatus such as the driving motor or the motor driving power source via the cooling fluid, the radiator is arranged in the air flow path of exterior fan and an opening and closing apparatus for opening and closing the air flow path of the exterior heat exchanger is provided.
    Type: Application
    Filed: November 9, 2001
    Publication date: January 30, 2003
    Inventors: Kazuya Matsuo, Kiyoshi Nagasawa, Toshihiko Fukushima
  • Patent number: 6492702
    Abstract: A circuit-incorporating light receiving device comprises a first semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a diffusion region of the second conductivity type, provided in a first portion of the second semiconductor layer of the first conductivity type, a circuit element provided in the first portion of the first semiconductor layer of the first conductivity type and a second portion of the second semiconductor layer of the first conductivity type. The second semiconductor layer of the first conductivity type and the diffusion region of the second conductivity type form a light detection photodiode portion, and the diffusion region of the second conductivity type has a diffusion depth less than or equal to a penetration depth of short-wavelength signal light.
    Type: Grant
    Filed: March 29, 2001
    Date of Patent: December 10, 2002
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Toshihiko Fukushima, Masaru Kubo, Shigeki Hayashida