Abstract: When the number of real-time events received from the same device exceeds a threshold value within a predetermined period of time, the monitoring server transmits a data sending request for stopping transmission of real-time events but transmitting regular events to the device. When it is determined, based on the regular events received from the device that has been stopped from transmitting real-time events, that the abnormality in the device has been resolved, a data sending request for restarting to transmit real-time events is transmitted to the device.

Abstract: A solid-state imaging element (1) according to the present disclosure includes a pixel array section (3), an isolation region (10), and a light shielding section. In the pixel array section (3), a plurality of light receiving pixels (2) each including a photoelectric conversion layer (17) made of an organic material and a charge storage layer (23) that stores a charge generated in the photoelectric conversion layer (17) is disposed side by side. The isolation region (10) is provided between the light receiving pixels (2) adjacent to each other in the pixel array section (3). The light shielding section suppresses incidence of light on the charge storage layer (23a) located in the isolation region (10).

Abstract: Provided is a light detection apparatus with high functionality. The light detection apparatus includes an effective region provided with a photoelectric converter that detects irradiation light and performs photoelectric conversion, and a peripheral region provided adjacent to the effective region. The photoelectric converter has a stacked structure including a first photoelectric conversion unit, a second photoelectric conversion unit, and a first optical filter. The first photoelectric conversion unit detects light in a first wavelength range of the irradiation light and performs photoelectric conversion. The second photoelectric conversion unit is provided so as to overlap with the first photoelectric conversion unit, detects light in a second wavelength range of the irradiation light, and performs photoelectric conversion.

Abstract: An imaging device includes a first semiconductor element including at least one bump pad that has a concave shape. The at least one bump pad includes a first metal layer and a second metal layer on the first metal layer. The imaging device includes a second semiconductor element including at least one electrode. The imaging device includes a microbump electrically connecting the at least one bump pad to the at least one electrode. The microbump includes a diffused portion of the second metal layer, and first semiconductor element or the second semiconductor element includes a pixel unit.

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip sections to each other and be obtained by bonding at least a first semiconductor chip section in which a pixel array and a multilayer wiring layer are formed and a second semiconductor chip section in which a logic circuit and a multilayer wiring layer are formed to each other in such a manner that the multilayer wiring layers are opposed to each other and are electrically connected to each other; and a light blocking layer configured to be formed by an electrically-conductive film of the same layer as a layer of a connected interconnect of one or both of the first and second semiconductor chip sections near bonding between the first and second semiconductor chip sections. The solid-state imaging device is a back-illuminated solid-state imaging device.

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

Abstract: A method of manufacturing a joining apparatus includes: providing a first metal member including an opening and a joint structure; providing a second metal member including an outer circumferential wall capable of contacting an inner circumferential wall that surrounds the opening and a joined structure, to which the joint structure is joined; causing the first metal member and the second metal member to move relative to each other, bringing one of a first joining section, which is configured by the inner circumferential wall and the outer circumferential wall, and a second joining section, which is configured by the joint structure and the joined structure, into contact, and separating the other joining section; starting energization between the first and the second metal members; bringing components of the other joining section into contact with each other; and joining the first and second joining sections by the relative movement and the energization.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

Abstract: A joining device includes: an electrode for transmitting a current to an object to be joined; a current supply section for generating the current supplied to the object due to a voltage being applied thereto; a current measurement section for measuring the current supplied to the object; and a first control unit for correcting the voltage applied to the current supply section based on a current value measured before a last time by the current measurement section such that a current value measured by the current measurement section becomes a target current value. A method for manufacturing a joined object includes: supplying a current, which is generated by applying a voltage to a current supply section, to the object to be joined; measuring the current supplied to the object; and correcting the voltage applied to the current supply section based on a ratio between the measured current value and a desired current value.

Abstract: A method of manufacturing a joining apparatus includes: providing a first metal member including an opening and a joint structure; providing a second metal member including an outer circumferential wall capable of contacting an inner circumferential wall that surrounds the opening and a joined structure, to which the joint structure is joined; causing the first metal member and the second metal member to move relative to each other, bringing one of a first joining section, which is configured by the inner circumferential wall and the outer circumferential wall, and a second joining section, which is configured by the joint structure and the joined structure, into contact, and separating the other joining section; starting energization between the first and the second metal members; bringing components of the other joining section into contact with each other; and joining the first and second joining sections by the relative movement and the energization.

Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

Abstract: There is provided a camera module including a stacked lens structure including a plurality of lens substrates. The plurality of lens substrates includes a first lens substrate including a first lens that is disposed at an inner side of a through-hole formed in the first lens substrate, and a second lens substrate including a second lens that is disposed at an inner side of a through-hole formed in the second lens substrate, wherein the first lens substrate is directly bonded to the second lens substrate. The camera module further includes an electromagnetic drive unit configured to adjust a distance between the stacked lens structure and a light-receiving element.

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: To provide a fitting member, an annular member, a joined member and a method of manufacturing the joined member, which prevent occurrence of a not-joined portion. A fitting member 10 has a fitting protrusion 10p which is protruded outward on an outside face 10s. An annular member 20 contains a space 20h in which the fitting member 10 is to be fitted. An annular member 20 has an annular protrusion 20p on an inside face 20f. When the fitting member 10 is fitted into the space 20h at a predetermined depth, the fitting protrusion 10p and the annular protrusion 20p fill not-joined portions which may be generated assuming that they are not provided. A joined member 30 is produced by fitting the fitting member 10 into the space 20h at the predetermined depth, so that a contact portion between the fitting member 10 and the annular member 20 is joined in solid phase.

Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.