Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract: A microwave plasma source for generating a microwave plasma inside a chamber by radiating a microwave into the chamber, includes: a microwave oscillator for oscillating the microwave and vary an oscillation frequency thereof; a waveguide through which the microwave propagates; an antenna part including a slot antenna for radiating the microwave into the chamber and having a predetermined pattern of slots, and a microwave-transmitting plate constituting a ceiling plate of the chamber and made of a dielectric material through which the microwave radiated from the slots transmits; temperature detectors for detecting temperatures at plural positions of the antenna part outside the chamber when the microwave plasma is generated; and a frequency controller for receiving detection signals obtained by the temperature detectors and controlling the oscillation frequency of the microwave oscillator so that a plasma density distribution inside the chamber becomes a desired distribution based on the detection signals.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. The coaxial waveguide includes an inner conductor, an intermediate conductor and an outer conductor. Each of a space between the inner conductor installed in a hollow portion of the intermediate conductor and the intermediate conductor and a space between the intermediate conductor installed in a hollow portion of the outer conductor and the outer conductor transmits microwaves. A difference between an inner diameter of the outer conductor and an outer diameter of the intermediate conductor is larger than a difference between an outer diameter of the inner conductor and an inner diameter of the intermediate conductor.

Abstract: This plasma processing apparatus includes a processing container that defines a plasma processing space, a holder that holds a substrate to be processed, a gas supply unit that supplies gas into the plasma processing space, an antenna that radiates microwaves to the plasma processing space, a coaxial waveguide that supplies the microwaves to the antenna, a plurality of stubs that regulate distribution of the microwaves radiated from the antenna according to an insertion amount, a measuring unit that measures density of the plasma generated in the plasma processing space by the microwaves radiated from the antenna or a parameter having a correlation with the density of the plasma along a circumferential direction of the substrate to be processed, and a controller that individually controls an insertion amount of each of the plurality of stubs based on the density of the plasma or the parameter.

Abstract: Disclosed is a plasma processing apparatus for performing a plasma processing on a workpiece. The apparatus includes: a processing container that accommodates the workpiece; a dielectric window that is provided to seal an opening in an upper portion of the processing container and transmits microwaves into the processing container; and a slot plate that is provided on an upper surface of the dielectric window and has a plurality of slots formed to radiate the microwaves to the dielectric window. The dielectric window includes a protrusion protruding downward from a lower surface of the dielectric window at a position corresponding to each of the slot, and a width of the protrusion is ?/4±?/8 with respect to a wavelength ? of the microwaves.

Abstract: In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.

Abstract: Disclosed is a plasma processing apparatus that processes a processing target substrate using microwave plasma within a processing container. The plasma processing apparatus includes a placing table provided in the processing container, and configured to place the processing target substrate thereon; and an antenna provided above the placing table to face the placing table, and including a dielectric plate, the antenna being configured to radiate microwaves into the processing container through the dielectric plate to generate plasma of a processing gas supplied into the processing container. The dielectric plate includes a flat plate portion provided on a bottom surface of the antenna, and formed in a flat shape at least on a surface facing the placing table; and a rib formed on a surface of the flat plate portion that is opposite to the surface facing the placing table.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves for plasma excitation; a dielectric having a facing surface that faces the processing space; a slot plate provided on a surface of the dielectric opposite to the facing surface and formed with a plurality of slots that radiate the microwaves to the processing space through the dielectric; and a conductor pattern that is provided on the facing surface of the dielectric and converges an electric field corresponding to the microwaves radiated from each of the slots.

Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space; a microwave generator configured to generate microwaves; a distributor configured to distribute the microwaves to a plurality of waveguides; an antenna installed in the processing container and to radiate the microwaves distributed to the plurality of waveguides to the processing space; a monitor unit configured to monitor a voltage of each of the plurality of waveguides; a storage unit configured to store a difference between a monitor value of the voltage monitored by the monitor unit and a predetermined reference value of the voltage and a control value of a distribution ratio of the distributor corresponding to the difference; and a control unit configured to acquire the control value of the distribution ratio of the distributor from the storage unit and to control the distribution ratio of the distributor.

Abstract: Disclosed is a plasma processing apparatus that includes a processing container configured to accommodate a wafer, and a dielectric window provided to hermetically seal an opening formed in a top portion of the processing container, and configured to transmit microwaves into the processing container. The dielectric window has a thickness of 3?/8 or less (here, ? is a wavelength of the microwaves) at least at a predetermined position where a microwave power is concentrated, and a protrusion is formed at the predetermined position on a bottom surface of the dielectric window to protrude downward from the bottom surface.

Abstract: Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space; a microwave generator configured to generate microwaves; a distributor configured to distribute the microwaves to a plurality of waveguides; an antenna installed in the processing container and to radiate the microwaves distributed to the plurality of waveguides to the processing space; a monitor unit configured to monitor a voltage of each of the plurality of waveguides; a storage unit configured to store a difference between a monitor value of the voltage monitored by the monitor unit and a predetermined reference value of the voltage and a control value of a distribution ratio of the distributor corresponding to the difference; and a control unit configured to acquire the control value of the distribution ratio of the distributor from the storage unit and to control the distribution ratio of the distributor.

Abstract: A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

Abstract: In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. Plasma of a reaction gas is generated in the second region by a plasma generation section. The plasma generation section includes an antenna that supplies microwaves as a plasma source. The antenna includes a dielectric window member and a waveguide. The window member is provided above the second region. The waveguide defines a waveguide path that extends in a radial direction. The waveguide is formed with a plurality of slot holes that allow the microwaves to pass therethrough from the waveguide path toward the window member plate. A bottom surface of the window member defines a groove that extends in the radial direction.

Abstract: A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. Line segments constituting a plane shape of the antenna when viewed in a direction along the axis include two line segments which are spaced to be distant from each other as being spaced away from the axis. The coaxial waveguide supplies the microwaves to the antenna from a gravity center of the antenna.

Abstract: The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.

Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a processing container that defines a processing space; an antenna provided above the processing space and including a disc-shaped wave guiding path around a predetermined axis and a metal plate defining the wave guiding path from a lower side; a microwave generator connected to the antenna and configured to generate microwaves; a stage provided in the processing container and facing the antenna across the processing space to intersect with the predetermined axis; and a heater configured to heat the metal plate. The metal plate includes a plurality of openings along a first circle around the predetermined axis and a second circle having a diameter larger than the first circle. The antenna includes a plurality of protrusions made of a dielectric material extending out into the processing space through the plurality of openings. The microwaves are introduced around the predetermined axis.

Abstract: Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a cooling plate. In addition, the microwave plasma processing apparatus includes an intermediate metal body installed on a processing container side of the cooling plate to be spaced apart from the cooling plate so that a spacing between the intermediate metal body and the cooling plate forms a waveguide of microwaves. The intermediate metal body is in contact with the cooling plate at one or plural convex portions arranged to block a portion of the waveguide. Further, the microwave plasma processing apparatus includes a coaxial waveguide configured to supply microwaves to the waveguide, a slot antenna plate configured to radiate microwaves via the waveguide, a dielectric window installed on the processing container side of the slot antenna plate, and a processing container installed to be sealed by the dielectric window.