Abstract: In forming a counter electrode in an FFS type liquid crystal display apparatus, a slit is not provided in a first pixel in which it has been found, in advance, that a bright spot defect is to occur by a defect inspection apparatus or the like. In the pixel without the slit, since a fringe electric field that has possibly occurred near the slit does not occur, a black spot defect can be obtained even if a signal potential is inputted to a pixel electrode.

Abstract: A substrate for a display device, includes: an insulation substrate; an insulation film, which is formed on the insulation substrate and is primarily made of one of silicon oxide and oxidized metal; an inorganic film, which is formed to be in direct contact with the insulation film and has an insulator part that is formed by changing oxide semiconductor into insulator; and a wiring film, which is formed to be in direct contact with the insulator part.

Abstract: A display device includes a common electrode provided to cross over the boundary between a display region and a non-display region. The common electrode is a member used for displaying an image in cooperation with a pixel electrode. In the common electrode, a portion existing at the display region is a conductor part. The conductor part is an altered part of an oxide semiconductor film.

Abstract: The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Abstract: The insulating properties of terminal lines on an array substrate can be maintained without adding any steps for avoiding formation of a counter electrode on the peripheral portion of a color filter substrate. A display includes an insulation film formed to cover an electrode formed on a surface of an array substrate, an oxide semiconductor film formed on a surface of a color filter substrate, and a seal member that is located between the insulation film and the oxide semiconductor film, which face each other, and that bonds the insulation film and the oxide semiconductor film together. An area surrounded by the seal member in plan view is taken as a display area. A portion of the oxide semiconductor film that corresponds to the display area is a conductor, and a portion of the oxide semiconductor film that corresponds to the outside of the display area is an insulator.

Abstract: A substrate for a display device, includes: an insulation substrate; an insulation film, which is formed on the insulation substrate and is primarily made of one of silicon oxide and oxidized metal; an inorganic film, which is formed to be in direct contact with the insulation film and has an insulator part that is formed by changing oxide semiconductor into insulator; and a wiring film, which is formed to be in direct contact with the insulator part.

Abstract: Source wires having a semiconductor film thereunder are formed wide within a range that does not overlap pixel electrodes formed later. Thereafter, a resist pattern for use in patterning the pixel electrodes is formed so as to overlap edge portions of the source wires, and etching using the resist pattern as a mask is performed, whereby the pixel electrodes are formed, and in addition, the edge portions of the source wires are removed, whereby a structure in which the semiconductor film has a portion projecting beyond the source wires on both sides is formed.

Abstract: Source wires having a semiconductor film thereunder are formed wide within a range that does not overlap pixel electrodes formed later. Thereafter, a resist pattern for use in patterning the pixel electrodes is formed so as to overlap edge portions of the source wires, and etching using the resist pattern as a mask is performed, whereby the pixel electrodes are formed, and in addition, the edge portions of the source wires are removed, whereby a structure in which the semiconductor film has a portion projecting beyond the source wires on both sides is formed.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

Abstract: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

Abstract: Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

Abstract: A substrate for a display device, includes: an insulation substrate; an insulation film, which is formed on the insulation substrate and is primarily made of one of silicon oxide and oxidized metal; an inorganic film, which is formed to be in direct contact with the insulation film and has an insulator part that is formed by changing oxide semiconductor into insulator; and a wiring film, which is formed to be in direct contact with the insulator part.