Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.

Abstract: A method of manufacturing a semiconductor device includes the steps of preparing a substrate having a semiconductor element; forming an insulation film on a surface of the substrate; forming a first film on the insulation film, the first film being a film which does not allow oxygen atoms to pass through; forming a first conductive film on the first film; forming a ferroelectric film on the first conductive film; forming a second conductive film on the ferroelectric film; forming a second film on the second conductive film; patterning the second film into a predetermined shape; forming a ferroelectric capacitor by etching the second conductive film, the ferroelectric film and the first conductive film using the patterned second film as a mask; and etching the exposed first film using mixed gas including a reductive gas.

Abstract: A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2 whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.