Patents by Inventor Toshihiko Kohisa

Toshihiko Kohisa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • IGFET with gate protection diode and antiparasitic isolation means
    Patent number: 4044373
    Abstract: Described are insulated gate-type field effect transistors used in capacitive memory circuits and having protective diodes for protecting the insulating films below the gate electrodes from electrical breakdown, in which parasitic transistor action which might be caused by minority carriers injected into semiconductor substrates by noise signals applied to the protective diodes are eliminated by means for suppressing injection of minority carriers or by means for preventing injected minority carriers from reaching the drain regions of the field effect transistors.
    Type: Grant
    Filed: June 12, 1973
    Date of Patent: August 23, 1977
    Assignee: Hitachi, Ltd.
    Inventors: Kosei Nomiya, Toshihiko Kohisa, Isao Matsumura
  • Semiconductor circuit devices using insulated gate-type field effect elements having protective diodes
    Patent number: 3934159
    Abstract: Insulated gate-type field effect transistors used in capacitive memory circuits and having protective diodes for protecting the insulating films below the gate electrodes from electrical breakdown, in which parasitic transistor action which might be caused by minority carriers injected into semiconductor substrates by noise signals applied to the protective diodes are eliminated by means for suppressing the injection of minority carriers or by means for preventing injected minority carriers from reaching the drain regions of the field effect transistors.
    Type: Grant
    Filed: October 18, 1968
    Date of Patent: January 20, 1976
    Assignee: Hitachi, Ltd.
    Inventors: Kosei Nomiya, Toshihiko Kohisa, Isao Matsumura