Abstract: There is provided a vehicle equipped with a shock absorbing structure that can absorb collision energy stably under all collision conditions to ensure the safety of crew members and passengers. The shock absorbing structure is arranged in an end part of the vehicle. The shock absorbing structure comprises an upper-stage shock absorbing structure 100 that is arranged in an upper part of a crushable zone to absorb collision energy by being crushed by a predetermined load, a lower-stage shock absorbing structure 120 that is arranged in a lower part of the crushable zone to absorb the collision energy by being crushed by the predetermined load, and a middle-stage shock absorbing structure 110 that is held between the upper-stage shock absorbing structure 100 and the lower-stage shock absorbing structure 120 arranged over and under the middle-stage shock absorbing structure 110.

Abstract: The invention provides a car body of a railway vehicle capable of absorbing the energy caused when collision occurs to the end of the car body. The present invention comprises a strength member 15 disposed along the circumferential direction of the car body on the end of the car body, a strength member 16 disposed along the circumferential direction at a position rearward from the member 15, rib members 17 disposed along the longitudinal direction of the car body and connecting the two strength members, and an outer panel 18 covering the same. The longitudinal direction of the rib member 17 corresponds to the longitudinal direction of the car body. The rib member 17 is composed of two flanges 17c, 17d and a web 17b connecting the two flanges, and the side having the web 17b is welded to the outer panel 18 via fillet welding. A notch 21 opened to the edge of the flange is formed on the flange at the center of the longitudinal direction of the rib member 17.

Abstract: Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween.

Abstract: A railway vehicle having an impact energy absorbing device capable of avoiding coincidence between starts of deformation of the impact energy absorbing device in the event of collision to reduce the pressure collapse peak load and, hence, loads on the vehicle body, passengers and so on in the case of application to a transportation apparatus such as a train in particular. The impact energy absorbing device has a plurality of energy absorbing members 11 and 12 which pressure-collapse in the event of collision to absorb impact energy, and which are mounted in a predetermined region in the longitudinal direction of the body of a vehicle while being spaced apart in the car body width direction. Front ends of the energy absorbing members 11 and 12 in the collision direction are shifted to a plurality of positions (jutted out by ?L).

Abstract: For a transportation machine such as a railway vehicle, a space for a driver is secured while collision energy is absorbed at a time of collision with a large obstacle, and entry of a flying object into a driving cab is prevented by a rigid structure at a time of collision with the flying object. Windows 40, 40 are provided in a flying object barrier plate 50 provided at a tip end portion of a driving cab 25, and energy absorbing members 100, 100 are penetrated through the windows 40, 40 to be disposed in a form extending outward of the flying object barrier plate 50 from an inside of the driving cab 25. The energy absorbing members 100, 100 of a large absorbing capacity can be efficiently disposed by utilizing a space of the driving cab 25 provided in a vehicle body. A beam member of a crushable zone 11a including the flying object barrier plate 50 is firmly placed and can be connected to a survival zone 10.

Abstract: Provided is a collision energy absorbing apparatus capable of mitigating loads to the car body proper, passengers and the like by adding a structure combining a prescribed static strength and collision energy absorption performance to an energy absorbing body of the collision energy absorbing apparatus. In a limited inner space of a car body, a cover 80 that covers energy absorbing bodies 51, 52 combines a prescribed static strength and collision energy absorption performance. The cover 80 prevents irregularities, such as the breakage of cylindrical bodies of aluminum alloy, i.e., the energy absorbing bodies 51, 52 in each of the stages of transportation, storage, assembling and the like of the collision energy absorbing apparatus 50.

Abstract: A rail vehicle capable of preventing reduction in strength and noise occurrence in a connecting portion of a low roof construction body to a roof construction or a side construction body, and facilitating mounting of the low roof construction body to the roof construction body or the side construction body, its manufacturing method and a hollow shape member used for the same are provided. In joining a hollow shape member 120 constructing a side construction body and a hollow shape member 210 constructing a low roof construction body 20, an uppermost portion above a spot to be a joint portion of the hollow shape member 120 to the low roof construction body 20 is cut, and a first protruded rib 124 and a second protruded rib 125 are left at an upper end portion 128 of the hollow shape member 120 toward the low roof construction body 20.

Abstract: Disclosed is a semiconductor device capable of realizing a reduction in the area of each pixel without degrading noise resistance. A switching transistor (13) and a signal accumulation capacitor (15) are formed on a semiconductor substrate (base semiconductor region) (11) of a first conduction type, on the basis of each unit region for constituting a pixel Px. The switching transistor (13) has a structure in which a source region (13S) and a drain region (13D) of a second conduction type are formed on the semiconductor substrate (11), and a gate electrode (13G) is formed on the region between the source region (13S) and the drain region (13D), with an insulating layer (12a) therebetween.