Abstract: A semiconductor package of an embodiment includes: a semiconductor chip having a signal input terminal and a signal output terminal; and a cap unit that is formed on the semiconductor chip. The cap unit includes a concave portion forming a hollow structure between the semiconductor chip and the cap unit, a first through electrode electrically connected to the signal input terminal, and a second through electrode electrically connected to the signal output terminal. Of the inner side surfaces of the concave portion, a first inner side surface and a second inner side surface facing each other are not parallel to each other.

Abstract: A semiconductor package according to embodiments includes: a semiconductor chip including a front electrode on a front surface thereof and a back electrode on a back surface thereof; a front-side cap portion including an air gap in a portion between the semiconductor chip and the front-side cap portion and a front-side penetrating electrode, and is positioned to face the front surface of the semiconductor chip; a back-side cap portion bonded with a first cap portion to hermetically seal the semiconductor chip, includes an air gap at least in a portion between the semiconductor chip and the back-side cap portion and a back-side penetrating electrode, and is positioned to face the back surface of the semiconductor chip; a front-side connecting portion which electrically connects the front electrode and the front-side penetrating electrode; and a back-side connecting portion which electrically connects the back electrode and the back-side penetrating electrode.

Abstract: An abnormality determination system for a processing apparatus includes: a data acquiring section that acquires time-series data changing with time from a signal outputted by a sensor installed in a processing apparatus for processing a processing object; a data selecting section that selects only model data, which is useful time-series data, from the time-series data acquired by the data acquiring section; a threshold value setting section configured to calculate variable threshold value data changing with time from the model data selected by the data selecting section; and a determining section configured to determine an occurrence of an abnormality by comparing time-series data to be monitored, acquired by the data acquiring section, with the variable threshold value data. The selection of model data is performed based on an evaluation performed by an inspection device which is configured to evaluate a processing result of the processing object performed by the processing apparatus.

Abstract: A semiconductor package of an embodiment includes: a semiconductor chip having a signal input terminal and a signal output terminal; and a cap unit that is formed on the semiconductor chip. The cap unit includes a concave portion forming a hollow structure between the semiconductor chip and the cap unit, a first through electrode electrically connected to the signal input terminal, and a second through electrode electrically connected to the signal output terminal. Of the inner side surfaces of the concave portion, a first inner side surface and a second inner side surface facing each other are not parallel to each other.

Abstract: An abnormality determination system for a processing apparatus includes: a data acquiring section that acquires time-series data changing with time from a signal outputted by a sensor installed in a processing apparatus for processing a processing object; a data selecting section that selects only model data, which is useful time-series data, from the time-series data acquired by the data acquiring section; a threshold value setting section configured to calculate variable threshold value data changing with time from the model data selected by the data selecting section; and a determining section configured to determine an occurrence of an abnormality by comparing time-series data to be monitored, acquired by the data acquiring section, with the variable threshold value data. The selection of model data is performed based on an evaluation performed by an inspection device which is configured to evaluate a processing result of the processing object performed by the processing apparatus.

Abstract: A semiconductor package according to embodiments includes: a semiconductor chip including a front electrode on a front surface thereof and a back electrode on a back surface thereof; a front-side cap portion including an air gap in a portion between the semiconductor chip and the front-side cap portion and a front-side penetrating electrode, and is positioned to face the front surface of the semiconductor chip; a back-side cap portion bonded with a first cap portion to hermetically seal the semiconductor chip, includes an air gap at least in a portion between the semiconductor chip and the back-side cap portion and a back-side penetrating electrode, and is positioned to face the back surface of the semiconductor chip; a front-side connecting portion which electrically connects the front electrode and the front-side penetrating electrode; and a back-side connecting portion which electrically connects the back electrode and the back-side penetrating electrode.

Abstract: The present embodiments provide an acceleration sensor, which enables highly accurate detection and has an extremely compact size. The acceleration sensor of the present embodiments is provided with a substrate, a anchor portion formed on the substrate, a support beam, which has one end connected to the anchor portion and extends across a space from the substrate, and a proof mass which is connected to the other end of the support beam and held across a space from the substrate. The acceleration sensor is further provided with first and second piezoelectric bending resonators, a comparison unit, and a calculation unit. The first and second piezoelectric bending resonators have one end connected to the anchor portion and the other end connected to the proof mass or the support beam and have a stack of a first electrode, a first piezoelectric film, and a second electrode.

Abstract: A resonator according to the embodiment includes: a substrate; a flat layered body which is formed above the substrate and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; an anchor portion which fixes the layered body above the substrate; a cut-out portion inside the layered body; a tuning fork vibrator which is formed in the cut-out portion, has both ends supported by the layered body and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; and an envelope which envelopes the layered body and the tuning fork vibrator in a noncontact fashion, and prevents an external force from being applied to the layered body and the tuning fork vibrator.

Abstract: A semiconductor module includes a high frequency chip, an insulating cap, a through electrode, interconnections, and an insulating layer. The insulating cap forms a hollow with the chip to cover the chip. The through electrode passes through a first plane of the cap and a second plane of the cap, the first plane facing the chip, the second plane being on a side opposite to the first plane. The interconnections are provided on the cap and connected to the through electrode. The insulating layer is provided on the cap and fills a portion between the interconnections therewith.

Abstract: A resonator according to the embodiment includes: a substrate; a flat layered body which is formed above the substrate and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; an anchor portion which fixes the layered body above the substrate; a cut-out portion inside the layered body; a tuning fork vibrator which is formed in the cut-out portion, has both ends supported by the layered body and is formed with at least a lower electrode, a piezoelectric film and an upper electrode; and an envelope which envelopes the layered body and the tuning fork vibrator in a noncontact fashion, and prevents an external force from being applied to the layered body and the tuning fork vibrator.

Abstract: A MEMS variable capacitor includes: a first connection beam having one end fixed to a substrate; a first actuation beam connected to the first connection beam; a second actuation beam connected to the first actuation beam and extending in a reverse direction; a second connection beam having one end fixed to the substrate; a third actuation beam connected to the second connection beam; a fourth actuation beam connected to the third actuation beam and extending in a reverse direction; a movable electrode provided between the second and fourth actuation beams; and a fixed electrode provided on the substrate opposed to the movable electrode. The first to fourth actuation beams have a piezoelectric film sandwiched between a lower electrode and an upper electrode, the first and third actuation beams are placed on a line, the second and fourth actuation beams are placed on a line, and the first and second actuation beams and the third and fourth actuation beams are placed symmetrically about a line.

Abstract: In a angular rate sensor, a weight and a base are connected directly through piezoelectric bimorph detectors and piezoelectric bimorph exciters each having a bent portion. When acceleration is applied to the weight, the weight is displaced so as to deform the piezoelectric bimorph detectors. Due to this deformation, charges generated in the piezoelectric bimorph detectors are detected so as to detect acceleration. If an angular rate is applied to the weight when the weight is vibrated by the piezoelectric bimorph exciters, Coriolis force is generated in the weight so as to deform the piezoelectric bimorph detectors. Due to this deformation, charges generated in the piezoelectric bimorph detectors are detected so as to detect the angular rate.

Abstract: A multi-axis accelerometer or a multi-axis angular rate sensor which can be made by an easy process and the size of which can be greatly reduced is provided. An inertia sensor has a substrate, a flat proofmass formed on the substrate and a stacked structure including at least a lower electrode, a piezoelectric film, and an upper electrode, an anchor unit formed in a cutout inside of the proofmass and fixed on the substrate, and a plurality of flat piezoelectric beams each having one end connected to the proofmass, the other end connected to the anchor unit, and a stacked structure formed in a cutout inside of the proofmass and including at least a lower electrode, a piezoelectric film, and an upper electrode, wherein the inertia sensor enables to detect an acceleration applied on the proofmass based on charges generated to the electrodes of the piezoelectric beams.

Abstract: A piezoelectric-driven MEMS element includes a substrate, a beam, a fixed portion, a fixed electrode portion and a power source. The beam is provided with a lower electrode film, a lower piezoelectric film, a middle electrode film, an upper piezoelectric film and an upper electrode film. The fixed portion fixes one end of the beam onto the substrate so as to hold the beam with a gap above the substrate. The fixed electrode portion has a capacitive gap between the fixed electrode portion and the other end of the beam. In addition, at least one or two of the lower electrode film, the middle electrode film and the upper electrode film is thicker than the rest thereof.

Abstract: A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

Abstract: The present embodiments provide an acceleration sensor, which enables highly accurate detection and has an extremely compact size. The acceleration sensor of the present embodiments is provided with a substrate, a anchor portion formed on the substrate, a support beam, which has one end connected to the anchor portion and extends across a space from the substrate, and a proof mass which is connected to the other end of the support beam and held across a space from the substrate. The acceleration sensor is further provided with first and second piezoelectric bending resonators, a comparison unit, and a calculation unit. The first and second piezoelectric bending resonators have one end connected to the anchor portion and the other end connected to the proof mass or the support beam and have a stack of a first electrode, a first piezoelectric film, and a second electrode.

Abstract: An actuator includes: a substrate; a fixed electrode provided on a major surface of the substrate; a first dielectric film provided on the fixed electrode, and made of crystalline material; a movable beam opposed to the major surface, and held above the substrate with a gap thereto; a movable electrode; and a second dielectric film. The movable electrode is provided on a surface of the movable beam facing the fixed electrode, and has an alternate voltage applied between the fixed electrode and the movable electrode. The second dielectric film is provided on a surface of the movable beam facing the fixed electrode, and is made of crystalline material.

Abstract: An infrared-detecting element includes: a substrate; a laminated body; an anchor coupling a part of the laminated body with the substrate and supporting the laminated body with a gap above the substrate; and an amplifier provided on the substrate and connected to at least one of the lower electrode and the upper electrode. The laminated body has a lower electrode, an upper electrode, and a piezoelectric film made of aluminum nitride which is provided between the lower electrode and the upper electrode and in which a c-axis is oriented almost perpendicularly to a film plane. The amplifier has a circuit performing conversion into voltage according to a charge generated in the laminated body.

Abstract: An actuator includes a first beam, a first fixed part, a second beam, a first connective part, and a first fixed electrode. The first beam extends from a first fixed end to a first connective end, and the first fixed part connects the first fixed end and the substrate and supports the first beam above a main surface of the substrate with a gap. The second beam extends from a second connective end to a first action end and is provided in parallel to the first beam, and has a first division part divided by a first slit extending from the first action end toward the second connective end. The first connective part connects the first connective end and the second connective end and holds the second beam above the main surface of the substrate with a gap. The first fixed electrode is provided on the main surface of the substrate being configured to be opposed to a part of the first division part on a side of the first action end.

Abstract: A piezoelectric driven MEMS apparatus includes: a substrate; a support part provided on the substrate; a fixed electrode provided on the substrate; and an actuator having a first electrode film, a piezoelectric film formed on the first electrode film, and a second electrode film formed on the piezoelectric film, a first end of the actuator being supported by the support part, a second end of the actuator being disposed so as to be opposed to the fixed electrode. The second end of the actuator is divided into a plurality of electrode parts by a plurality of slits which pass through the first electrode film, the piezoelectric film and the second electrode film, at least a part of each electrode part is linked to parts of adjacent electrode parts, and each electrode part is capable of generating bending deformation individually.