Patents by Inventor Toshihiko Nishimori
Toshihiko Nishimori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130049063Abstract: Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a substrate (11) and electrode portions (15, 16) and electrode portions (17, 18) which act as electrodes for the multiple semiconductor layers (12-14), an SiN film (31) having a thickness of 35 nm or more and comprising silicon nitride covers the surrounds of the multiple semiconductor layers (12-14), the electrode portions (15, 16) and the electrode portions (17, 18) and an SiO film (32) having a higher thickness than that of the SiN film (31) and comprising silicon oxide covers the surround of the SiN film (31), as protective films for the semiconductor light-emitting element.Type: ApplicationFiled: February 10, 2011Publication date: February 28, 2013Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hidetaka Kafuku, Toshihiko Nishimori, Hisao Kawasaki
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Publication number: 20130037850Abstract: Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers (12-14) formed on a substrate (11); and electrode sections (15, 16) and other electrode sections (17, 18) that are the electrodes of the plurality of semiconductor layers (12-14)—as the protective film thereof, the surroundings of the plurality of semiconductor layers (12-14), the electrode sections (15, 16), and the other electrode sections (17, 18) are covered by a SiN film (21) comprising silicon nitride of which the quantity of Si—H bonds in the film is less than 1.0×1021 bonds/cm3.Type: ApplicationFiled: February 10, 2011Publication date: February 14, 2013Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hidetaka Kafuku, Toshihiko Nishimori, Hisao Kawasaki
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Patent number: 8288294Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.Type: GrantFiled: June 25, 2009Date of Patent: October 16, 2012Assignees: Mitsubishi Heavy Industries, Ltd., Mitsubishi Electric CorporationInventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
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Publication number: 20110266660Abstract: An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device.Type: ApplicationFiled: June 25, 2009Publication date: November 3, 2011Applicants: MITSUBISHI ELECTRIC CORPORATION, MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Hidetaka Kafuku, Toshihito Fujiwara, Toshihiko Nishimori, Tadashi Shimazu, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Takuya Kamiyama, Tetsuya Yamamoto, Shinya Shibata
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Patent number: 7977243Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: GrantFiled: January 26, 2010Date of Patent: July 12, 2011Assignee: Canon Anelva CorporationInventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
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Patent number: 7972946Abstract: Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.Type: GrantFiled: July 24, 2007Date of Patent: July 5, 2011Assignee: Mitsubishi Heavy Industries, Ltd.Inventors: Tadashi Shimazu, Masahiko Inoue, Toshihiko Nishimori, Yuichi Kawano
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Patent number: 7923374Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.Type: GrantFiled: May 26, 2009Date of Patent: April 12, 2011Assignee: Canon Anelva CorporationInventors: Hitoshi Sakamoto, Naoki Yahata, Toshihiko Nishimori, Yoshiyuki Ooba, Hiroshi Tonegawa, Ikumasa Koshiro, Yuzuru Ogura
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Publication number: 20100181654Abstract: An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film.Type: ApplicationFiled: June 13, 2009Publication date: July 22, 2010Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Toshihito Fujiwara, Toshihiko Nishimori, Toshiya Watanabe, Naoki Yasuda, Hideharu Nobutoki, Teruhiko Kumada, Chiho Mizushima, Takuya Kamiyama, Tetsuya Yamamoto
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Publication number: 20100124825Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: ApplicationFiled: January 26, 2010Publication date: May 20, 2010Applicant: CANON ANELVA CORPORATIONInventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
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Publication number: 20100047471Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: ApplicationFiled: October 27, 2009Publication date: February 25, 2010Applicant: CANON ANELVA CORPORATIONInventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
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Publication number: 20100040802Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.Type: ApplicationFiled: October 21, 2009Publication date: February 18, 2010Applicant: CANON ANELVA CORPORATIONInventors: Hitoshi Sakamoto, Naoki Yahata, Toshihiko Nishimori, Yoshiyuki Ooba, Hiroshi Tonegawa, Ikumasa Koshiro, Yuzuru Ogura
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Patent number: 7659209Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: GrantFiled: May 17, 2007Date of Patent: February 9, 2010Assignee: Canon Anelva CorporationInventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
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Publication number: 20090311866Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor absorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.Type: ApplicationFiled: August 21, 2009Publication date: December 17, 2009Applicant: CANON ANELVA CORPORATIONInventors: Hitoshi Sakamoto, Naoki Yahata, Toshihiko Nishimori, Yoshiyuki Ooba, Hiroshi Tonegawa, Ikumasa Koshiro, Yuzuru Ogura
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Publication number: 20090233442Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.Type: ApplicationFiled: May 26, 2009Publication date: September 17, 2009Applicant: CANON ANELVA CORPORATIONInventors: Hitoshi Sakamoto, Naoki Yahata, Toshihiko Nishimori, Yoshiyuki Ooba, Hiroshi Tonegawa, Ikumasa Koshiro, Yuzuru Ogura
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Publication number: 20090176380Abstract: Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film.Type: ApplicationFiled: July 24, 2007Publication date: July 9, 2009Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD.Inventors: Tadashi Shimazu, Masahiko Inoue, Toshihiko Nishimori, Yuichi Kawano
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Publication number: 20090095425Abstract: An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.Type: ApplicationFiled: October 8, 2008Publication date: April 16, 2009Applicant: PHYZCHEMIX CORPORATIONInventors: Hitoshi SAKAMOTO, Toshihiko NISHIMORI, Saneyuki GOYA, Takao ABE, Noriaki UEDA
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Publication number: 20070272655Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: ApplicationFiled: May 17, 2007Publication date: November 29, 2007Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
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Patent number: 7262500Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.Type: GrantFiled: May 19, 2005Date of Patent: August 28, 2007Assignee: Phyzchemix CorporationInventors: Hitoshi Sakamoto, Naoki Yahata, Toshihiko Nishimori, Yoshiyuki Ooba, Hiroshi Tonegawa, Ikumasa Koshiro, Yuzuru Ogura
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Publication number: 20070141274Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: ApplicationFiled: December 14, 2006Publication date: June 21, 2007Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori
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Publication number: 20070117363Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.Type: ApplicationFiled: December 14, 2006Publication date: May 24, 2007Inventors: Hitoshi Sakamoto, Naoki Yahata, Ryuichi Matsuda, Yoshiyuki Ooba, Toshihiko Nishimori