Patents by Inventor Toshihiko Shiozawa
Toshihiko Shiozawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8372761Abstract: A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.Type: GrantFiled: March 28, 2008Date of Patent: February 12, 2013Assignee: Tokyo Electron LimitedInventors: Yoshiro Kabe, Takashi Kobayashi, Toshihiko Shiozawa, Junichi Kitagawa
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Publication number: 20120184107Abstract: In a semiconductor device manufacturing method, the formation of a sacrificial oxide film and removal thereof by wet etching and/or the formation of a silicon dioxide film and removal thereof by wet etching are performed. In the process for manufacturing a semiconductor device, the formation of the sacrificial oxide film and/or the silicon dioxide film is performed within a processing chamber of a plasma processing apparatus using a plasma in which O(1D2) radicals produced using a processing gas that contains oxygen are dominant.Type: ApplicationFiled: September 29, 2010Publication date: July 19, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Sato, Toshihiko Shiozawa, Tatsuo Nishita, Yoshihiro Hirota
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Patent number: 8119530Abstract: A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.Type: GrantFiled: December 20, 2007Date of Patent: February 21, 2012Assignees: National University Corporation Nagoya University, Tokyp Electron LimitedInventors: Masaru Hori, Yoshiro Kabe, Toshihiko Shiozawa, Junichi Kitagawa
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Patent number: 8043979Abstract: A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.Type: GrantFiled: September 27, 2007Date of Patent: October 25, 2011Assignee: Tokyo Electron LimitedInventors: Takashi Kobayashi, Junichi Kitagawa, Yoshiro Kabe, Toshihiko Shiozawa
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Patent number: 8003484Abstract: The present invention provides a method for forming a silicon oxide film, which has excellent insulating properties and higher quality that can enhance a yield in manufacture of semiconductor devices, while keeping advantageous points in a plasma oxidation process. In this method, plasma is generated under a first process condition that a ratio of oxygen in a processing gas is 1% or less and pressure is within a range of 0.133 to 133 Pa, so as to form the silicon oxide film, by oxidizing silicon on a surface of an object to be processed including silicon as a main component, by using the plasma (first oxidation step). Following the first oxidation step, the plasma is generated under a second process condition that the ratio of oxygen in the processing gas is 20% or more and the pressure is within a range of 400 to 1333 Pa, so as to form an additional silicon oxide film, by further oxidizing the surface of the object to be processed, by using the plasma (second oxidation step).Type: GrantFiled: September 28, 2007Date of Patent: August 23, 2011Assignee: Tokyo Electron LimitedInventors: Yoshiro Kabe, Takashi Kobayashi, Toshihiko Shiozawa, Junichi Kitagawa
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Patent number: 7989364Abstract: A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm?3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.Type: GrantFiled: August 27, 2007Date of Patent: August 2, 2011Assignees: National University Corporation Nagoya University, Tokyo Electron LimitedInventors: Masaru Hori, Toshihiko Shiozawa, Yoshiro Kabe, Junichi Kitagawa
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Patent number: 7910495Abstract: A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.Type: GrantFiled: September 27, 2007Date of Patent: March 22, 2011Assignee: Tokyo Electron LimitedInventors: Toshihiko Shiozawa, Yoshiro Kabe, Takashi Kobayashi, Hikaru Adachi, Junichi Kitagawa, Nobuhiko Yamamoto
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Publication number: 20100307685Abstract: In a microwave plasma processing apparatus, when a surface of a planar antenna 31 for radiating a microwave to form a plasma is concentrically divided into a central region 31a, an outer circumferential region 31c and a middle region 31b therebetween, a plurality of pairs of microwave radiating holes 32 elongated in different directions are concentrically arranged in the central region 31a and the outer circumferential region 31c and no microwave radiating hole is formed in the middle region 31b, and a microwave radiating surface of a microwave transmitting plate 28 is provided with a concave portion 28a.Type: ApplicationFiled: January 30, 2009Publication date: December 9, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Kinya Ota, Caizhong Tian, Hiroshi Kobayashi, Yoshihiro Sato, Toshihiko Shiozawa, Koji Maekawa
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Publication number: 20100240225Abstract: Disclosed is a microwave plasma processing apparatus (100) that generates a plasma of a processing gas in a chamber (1) by microwaves radiated from microwave radiating holes (32) of a plane antenna (31) and transmitted through a microwave-transmissive plate (28), thereby to carry out plasma processing of a processing object with the plasma. The microwave-transmissive plate (28) has a microwave transmitting surface having a recessed/projected area (42) in an area corresponding to a peripheral region of the processing object, and having a flat area (43) in an area corresponding to a central region of the processing object (W).Type: ApplicationFiled: June 10, 2008Publication date: September 23, 2010Applicant: Tokyo Electron LimitedInventors: Yoshihiro Sato, Takashi Kobayashi, Toshihiko Shiozawa, Daisuke Tamura
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Publication number: 20100136797Abstract: A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.Type: ApplicationFiled: March 28, 2008Publication date: June 3, 2010Inventors: Yoshiro Kabe, Takashi Kobayashi, Toshihiko Shiozawa, Junichi Kitagawa
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Publication number: 20100105216Abstract: A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.Type: ApplicationFiled: September 27, 2007Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Takashi Kobayashi, Junichi Kitagawa, Yoshiro Kabe, Toshihiko Shiozawa
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Publication number: 20100093179Abstract: A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.Type: ApplicationFiled: December 20, 2007Publication date: April 15, 2010Applicants: National University Corporation Nagoya University, TOKYO ELECTRON LIMITEDInventors: Masaru Hori, Yoshiro Kabe, Toshihiko Shiozawa, Junichi Kitagawa
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Publication number: 20100093185Abstract: The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa.Type: ApplicationFiled: September 28, 2007Publication date: April 15, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshiro Kabe, Takashi Kobayashi, Toshihiko Shiozawa, Junichi Kitagawa
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Publication number: 20100029093Abstract: A silicon oxide film forming method includes a step of placing an object to be processed and having a surface having a projecting/recessed pattern and containing silicon in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen at a proportion of 5 to 20% under a processing pressure of 267 to 400 Pa in the processing vessel, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.Type: ApplicationFiled: September 27, 2007Publication date: February 4, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihiko Shiozawa, Yoshiro Kabe, Takashi Kobayashi, Junichi Kitagawa, Kazuhiro Isa
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Publication number: 20100015815Abstract: A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.Type: ApplicationFiled: September 27, 2007Publication date: January 21, 2010Applicant: Tokyo Electron LimitedInventors: Toshihiko Shiozawa, Yoshiro Kabe, Takashi Kobayashi, Hikaru Adachi, Junichi Kitagawa, Nobuhiko Yamamoto
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Publication number: 20090263919Abstract: A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(1D2) radical density of 1×1012 [cm?3] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(1D2) radical density in the plasma is measured by a VUV monochromator 63, and a correction is made to the plasma process conditions.Type: ApplicationFiled: August 27, 2007Publication date: October 22, 2009Applicants: National University Corporation Nagoya University, Tokyo Electron LimitedInventors: Masaru Hori, Toshihiko Shiozawa, Yoshiro Kabe, Junichi Kitagawa
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Publication number: 20080093658Abstract: When nitriding a tunnel oxide film in a nonvolatile memory device a nitrided region is formed in the surface portion of the tunnel oxide film by a plasma processing using a process gas containing nitrogen gas.Type: ApplicationFiled: December 22, 2005Publication date: April 24, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihiko Shiozawa, Shingo Furui, Takashi Kobayashi, Junichi Kitagawa