Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

Abstract: According to the present invention, bread dough can be produced in a very short time by kneading 40 to 80 parts by weight of flour, 30 to 80 parts by weight of water, provided that the amount of water does not exceed that of flour, and a suitable amount of yeast, to such an extent that dough breakdown of the mixture begins within 5 minutes as determined by a resistograph (first step); and adding to the mixture, immediately or after allowing the mixture to rest to cause fermentation, such an amount of flour that the total amount thereof will reach 100 parts by weight, and if necessary, a suitable amount of water, followed by kneading (second step).Further, dough having excellent elasticity can be obtained by adding an acid to the ingredients for kneading in the first step to adjust the pH of the kneaded mixture obtained in the first step to 4-5 and adding a salt to the ingredients for kneading in the second step to adjust the pH of the dough obtained in the second step to 5-6.