Patents by Inventor Toshihiko Yamaoki
Toshihiko Yamaoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5278015Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.Type: GrantFiled: July 23, 1992Date of Patent: January 11, 1994Assignee: Sango Electric Co., Ltd.Inventors: Masayuki Iwamoto, Koji Minami, Toshihiko Yamaoki
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Patent number: 5258207Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.Type: GrantFiled: July 23, 1992Date of Patent: November 2, 1993Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Iwamoto, Koji Minami, Toshihiko Yamaoki
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Patent number: 5242504Abstract: A photovoltaic device, wherein a non-crystalline semiconductor layer of one conductivity type formed on a single crystal or a polycrystalline semiconductor substrate of the opposite conductivity type is annealed thereby to change the non-crystalline semiconductor to a polycrystalline semiconductor, with a pn junction plane formed therebetween. The depth of the junction plane is 500 .ANG. or less from the light incident surface of the polycrystallized semiconductor. Moreover, the light incidence surface can be made uneven by increasing the growth rate of the non-crystalline semiconductor.Type: GrantFiled: November 19, 1991Date of Patent: September 7, 1993Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Iwamoto, Kouji Minami, Toshihiko Yamaoki
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Patent number: 5172163Abstract: A photovoltaic photo-receptor includes a glass substrate, a transparent electrode, a plurality of photovoltaic layers which are sequentially laminated and formed and mainly composed of a-Si having photovoltaic functions, and a surface layer formed on the uppermost photovoltaic layer and composed of a-SiN. When a light image is irradiated from an LED array head, photovoltaic voltges are generated on the respective photovoltaic layers in accordance with the light image, whereby an electrostatic latent image having a potential which is established by adding the voltages generated at the respective photovoltaic layers is formed on the surface layer. A toner to which a developing bias is applied is supplied from a magnetic brush to be brought into contact with the surface layer of the photovoltaic photoreceptor, so that the electrostatic latent image is toner-developed. A toner image is transcribed onto a paper by a transcribing roller which is applied with a transferring bias.Type: GrantFiled: May 9, 1990Date of Patent: December 15, 1992Assignee: Sanyo Electric Co., Ltd.Inventors: Toshihiko Yamaoki, Tomonori Nagashima, Koji Minami
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Patent number: 5159389Abstract: An electrostatic latent image member for use in an electrophotographic machine which can simultaneously perform such as charge not by a corona discharge, exposure, developing, cleaning, and the like, where a photosensitive unit including a photoconductive layer is laminated on a transparent supporting member, and the photosensitive unit which is added with an element for trapping an electric charge being injected in the vicinity of its surface can trap the electric charge being injected therein by a magnetic brush making contact with the outer surface of the photosensitive unit.Type: GrantFiled: October 18, 1991Date of Patent: October 27, 1992Assignee: Sanyo Electric Co., Ltd.Inventors: Koji Minami, Toshihiko Yamaoki, Tomonori Nagashima, Kenichiro Wakisaka
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Patent number: 5152833Abstract: An amorphous silicon film contains not less than 30 at. % hydrogen and includes silicon atoms joined with one hydrogen atom and silicon atoms joined with two hydrogen atoms, the ratio of the silicon atoms joined with two hydrogen atoms to the silicon atoms joined with one hydrogen atom being not more than 0.4. This amorphous silicon films is produced by performing plasma-assisted chemical vapor deposition at a substrate temperature of not more than 100.degree. C., while supplying hydrogen and silane in the predetermined ratio, the ratio of the flow of hydrogen to that of silane being not less than 1.Type: GrantFiled: August 29, 1990Date of Patent: October 6, 1992Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Iwamoto, Koji Minami, Toshihiko Yamaoki
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Patent number: 5066340Abstract: A photovoltaic device has a crystalline layer of a first conductivity type formed of crystalline silicon semiconductor material, an amorphous layer of an opposite conductivity type formed of amorphous silicon semiconductor material, and a microcrystalline layer formed of substantially intrinsic microcrystalline silicon semiconductor material provided between the crystalline layer and the amorphous layer.Type: GrantFiled: August 6, 1990Date of Patent: November 19, 1991Assignee: Sanyo Electric Co., Ltd.Inventors: Masayuki Iwamoto, Kouji Minami, Toshihiko Yamaoki
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Patent number: 4961094Abstract: An electrostatic recording apparatus includes a photosensitive drum which is charged at +700 V by a first charger. Intensity of the light emitted from an LED array that is downstream from the first charger is adjusted such that a light image having strong intensity and/or a light image having weak intensity can be irradiated to the photosensitive drum. A surface voltage of a portion where the light image having weak intensity is irradiated becomes +400 V. A surface voltage of a portion where the light image having strong intensity is irradiated becomes +100 V. The photosensitive drum is charged at -400 V in the reverse polarity opposite to that of the first charger by a second charger which is arranged downstream from the LED array. As a result, electrostatic latent images of three gradations having voltages of +300 V, 0 V and -300 V respectively are formed on the photosensitive drum.Type: GrantFiled: May 31, 1988Date of Patent: October 2, 1990Assignee: Sanyo Electric Co., Ltd.Inventors: Toshihiko Yamaoki, Kenichiro Wakisaka, Kouji Minami, Masayuki Iwamoto
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Patent number: 4935403Abstract: A recording head comprises a magnetically permeable substrate, a superconducting film formed on one side of said substrate, a means for producing a uniform magnetic field sustantially perpendicular to a surface of the superconducting film, and a means for locally destroying the superconductivity of the superconducting film so as to produce a pattern of normal conducting portions in the area of the superconducting film where the magnetic field is applied. A recording device comprises a recording head for producing a pattern of a magnetic field on a recording medium, a toner supply unit arranged in face-to-face relationship with the recording head at a spaced short distance from the head to form a visible pattern of magnetic toners on the recording medium, and a fixing unit for fixing the magnetic toners on the recording medium to complete a record.Type: GrantFiled: November 7, 1988Date of Patent: June 19, 1990Assignee: Sanyo Electric Co., Ltd.Inventors: Toshihiko Yamaoki, Kouji Minami, Kenichiro Wakisaka, Masayuki Iwamoto