Abstract: Described herein is a technique capable of improving an operation rate of an apparatus using a plurality of detoxification apparatuses by removing by-products adhered thereto. According to one aspect of the technique, a processing apparatus includes a controller configured to perform a process recipe of forming a film on a substrate, The controller performs: (a) when an operation state of the first detoxification apparatus is an operation-in-progress state, checking an operation state of the second detoxification apparatus; (b) when the operation state of the second detoxification apparatus is not a maintenance-in-progress state, starting an operation of the second detoxification apparatus and switching the operation state of the first detoxification apparatus to the maintenance-in-progress state; and (c) when the operation state of the second detoxification apparatus is the maintenance-in-progress state, continuing an operation of the first detoxification apparatus.

Abstract: There is provided a technique that includes: a controller configured to execute a process recipe including a plurality of steps to perform a predetermined process on a substrate. The controller acquires device data, which includes at least one of a current value, a rotational speed, and a back pressure of a pump, in a specific step among the plurality of steps and compares an acquired value of the device data with a previously acquired value of the device data. The controller generates a notification if at least one of the following conditions is met: the acquired value for the current value is larger than the previously acquired value for the current value, the acquired value for the back pressure is larger than the previously acquired value for the back pressure, and the acquired value for the rotational speed is smaller than the previously acquired value for the rotational speed.

Abstract: There is provided a technique that includes: a main controller configured to execute a process recipe including a plurality of steps to perform a predetermined process on a substrate so as to acquire device data when executing the process recipe; and a storage part configured to store the acquired device data, wherein the main controller is configured to: acquire the device data in a predetermined specific step among the steps constituting the process recipe; calculate a value of the acquired device data in the specific step; compare the calculated value with a value of the device data in the specific step calculated at a time of previous execution of the process recipe; and generate an alarm when the calculated value shows a predefined tendency.

Abstract: Described herein is a technique capable of improving an operation rate of an apparatus using a plurality of detoxification apparatuses by removing by-products adhered thereto. According to one aspect of the technique, a processing apparatus includes a controller configured to perform a process recipe of forming a film on a substrate, The controller performs: (a) when an operation state of the first detoxification apparatus is an operation-in-progress state, checking an operation state of the second detoxification apparatus; (b) when the operation state of the second detoxification apparatus is not a maintenance-in-progress state, starting an operation of the second detoxification apparatus and switching the operation state of the first detoxification apparatus to the maintenance-in-progress state; and (c) when the operation state of the second detoxification apparatus is the maintenance-in-progress state, continuing an operation of the first detoxification apparatus.

Abstract: According to one aspect of the technique, there is provided a processing apparatus including: a process structure including: a process furnace, in which an object to be processed is processed by a gas, provided in a housing; and an opening configured to enable a maintenance and provided at a rear side of the housing; an exhaust structure configured to allow a maintenance region to be provided at a region facing the opening and to exhaust the gas from the process furnace; and an exhaust apparatus configured to secure the maintenance region at the region facing the opening and placed in contact with a side of the exhaust structure opposite to the process structure.

Abstract: Described herein is a technique capable of removing by-products before the by-products are deposited to an exhaust part. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device including: (a) processing a substrate while maintaining an inner pressure of a process chamber at a process pressure by adjusting a valve configured to adjust the inner pressure of the process chamber; (b) changing the inner pressure of the process chamber from the process pressure to an atmospheric pressure; and (c) supplying a predetermined gas to a downstream side of the valve to bypass the process chamber while performing (b).

Abstract: There is provided a technique that includes: a main controller configured to execute a process recipe including a plurality of steps to perform a predetermined process on a substrate so as to acquire device data when executing the process recipe; and a storage part configured to store the acquired device data, wherein the main controller is configured to: acquire the device data in a predetermined specific step among the steps constituting the process recipe; calculate a value of the acquired device data in the specific step; compare the calculated value with a value of the device data in the specific step calculated at a time of previous execution of the process recipe; and generate an alarm when the calculated value shows a predefined tendency.

Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Abstract: A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Abstract: It is intended to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of suppressing formation of a film inside a nozzle and extending a replacement or maintenance cycle of the nozzle, thereby realizing improvement in operation rate of the apparatus.