Abstract: Provided is martensitic steel which is used in structures such as buildings and bridges, and automotive underbody, and mechanical parts such as gears and is more suitably used for steel products such as thick steel sheets, shape steel, a deformed steel bar, steel bars, or steel wires. The martensitic steel has a microstructure of a martensite structure containing a chemical composition, by mass %, of Si: 1.0 to 3.5%, Mn: 4.5 to 5.5%, Al: 0.001 to 0.080%, Nb: 0.045% or less, and C having an amount in which the following regression equation (1) is satisfied and the maximum stress (TS) becomes 1800 to 2160 MPa, a balance being Fe and inevitable impurities of: P: 0.030% or less, S: 0.020% or less, and N: 0.010% or less, the martensitic steel having total elongation of 13 to 15%. TS(maximum stress) [MPa]=4000×C[mass %]+1050??(1).

Abstract: Provided is martensitic steel which is used in structures such as buildings and bridges, and automotive underbody, and mechanical parts such as gears and is more suitably used for steel products such as thick steel sheets, shape steel, a deformed steel bar, steel bars, or steel wires. The martensitic steel has a microstructure of a martensite structure containing a chemical composition, by mass %, of Si: 1.0 to 3.5%, Mn: 4.5 to 5.5%, Al: 0.001 to 0.080%, Nb: 0.045% or less, and C having an amount in which the following regression equation (1) is satisfied and the maximum stress (TS) becomes 1800 to 2160 MPa, a balance being Fe and inevitable impurities of: P: 0.030% or less, S: 0.020% or less, and N: 0.010% or less, the martensitic steel having total elongation of 13 to 15%.

Abstract: A high strength phosphorus-containing steel having fine texture free from the problem of embrittlement by positively using the presence of P, which is a carbon steel having an average ferritic grain diameter of 3 &mgr;m or less and containing from 0.04 to 0.1% by mass of P, wherein the volume fraction of P segregated in the grain boundary accounts for 0.3 or less in case the grain boundary is covered by a P layer 1 nm in thickness.

Abstract: A TiAl intermetallic compound-base alloy material having excellent strength properties at high temperatures and ductility, characterized by comprising: a fine alumina (Al.sub.2 O.sub.3) dispersed so as to give an O.sub.2 concentration of 1000 to 5000 ppm by weight and in a particle diameter of 200 to 500 nm; a boride (TiB.sub.2) dispersed to give a B concentration of 0.1 to 10 at % and in a particle diameter of not more than 500 nm; 1 to 3 at % of at least one of Cr, Mn, and V; and TiAl having a Ti content of 50 to 53 at % and an Al content of 47 to 50 at %, said TiAl intermetallic compound-base alloy material having been directly cast at a cooling rate of 10.sup.3 to 10.sup.5 .degree. C./sec and a process for producing the same. According to the present invention, exhaust valves for automobiles and materials for engine turbines for jet airplanes and the like having excellent tensile strength at high temperatures and ductility at high temperatures and room temperature are provided.

Abstract: On the front surface of an insulating substrate, there are formed first and second terminal electrodes at one end portion of the substrate, a third terminal electrode at the other end portion, a resistor portion connected to the first and second terminal electrodes, and a capacitor portion connected to the second and third terminal electrodes. The capacitor portion has a multilayer structure consisting of a bottom electrode, dielectric layer and a top electrode.

Abstract: Disclosed are a structure and a method of manufacture of a chip composite electronic component with improved moisture resistance. A pair of end electrodes are formed on a surface of the substrate at opposite end portions thereof. An intermediate electrode is formed at a location between the end electrodes on the surface of the substrate. The intermediate electrode includes a lower electrode, a resistor electrode and a pad electrode formed continuous therebetween. Another element is formed on the lower electrode so as to be electrically connected between the lower electrode and one of the end electrodes. A resistance element is formed between the other of the end electrodes and the resistor electrode. A glass layer is formed to cover another element, the resistance element and the pad electrode. A protective layer of a synthetic resin is formed to cover the entire surface of the glass layer and part of each the end electrode.

Abstract: A chip resistor device includes an insulating chip substrate having a top surface formed with a resistor film which is covered by a protective coating. The top surface of the substrate is also formed with a pair of terminal electrodes provided at both ends of the chip substrate. Each of the terminal electrodes includes a main top electrode layer formed on the top surface of the chip substrate in electrical conduction with the resistor film, an auxiliary top electrode layer formed on the main top electrode layer, a side electrode layer formed on a corresponding end face of the chip substrate, and a plated metal electrode layer formed on the auxiliary top electrode layer and the side electrode layer. The auxiliary top electrode layer is formed with a cutout at which the plated metal electrode layer is held in direct contact with the main top electrode layer.

Abstract: Disclosed are a thick-film capacitor and a chip-type composite electronic component. A pair of end electrodes are formed on the insulator substrate. A lower electrode is formed on the insulator substrate. A dielectric layer is formed on the lower electrode. An upper electrode formed on the dielectric layer. One of the lower electrode and the upper electrode has a broad-width portion having a width wider than the remaining portion thereof. The one of the lower and upper electrode at the broad-width portion is directly connected to one of the end electrodes. The thick-film capacitor is provided with a capacitor electrode arranged to provide positive connection, even where the width of the capacitor electrode is determined narrow to meet a small capacitance value.

Abstract: A chip type thick film capacitor is provided which comprises an insulating chip (11) serving as a substrate and having a head surface (11a). The chip head surface (11a) is formed with a first lead electrode (12) and a second lead electrode (13) spaced from the first lead electrode (12). The chip head surface (11a) is also formed with a first capacitor electrode (14) in electrical conduction with the first lead electrode (12). The chip head surface (11a) is further formed with an auxiliary electrode (20) which is held in electrical conduction with the second lead electrode (13) but spaced from the first capacitor electrode (14) by a predetermined distance (D1). A dielectric layer (15) is formed on the first capacitor electrode (14), and a second capacitor electrode (16) is formed on the dielectric layer (15) in electrical conduction with the auxiliary electrode (20).

Abstract: When resistor elements, common electrodes and individual electrodes are formed on a substrate, a disconnected portion, i.e., open portion is formed in one of the common electrodes. After the respective resistor elements are trimmed, the disconnected portion of the one common electrode is bridged by a conductor.

Abstract: When resistor elements, common electrodes and individual electrodes are formed on a substrate, a disconnected portion, i.e., open portion is formed in one of the common electrodes. After the respective resistor elements are trimmed, the disconnected portion of the one common electrode is bridged by a conductor.

Abstract: A Ti-Al intermetallic compound is prepared from a mixture of about 40 to 52 atomic % Ti, about 48 to 60 atomic % Al, and 10 to 3000 atomic ppm of at least one of P, As, Se, or Te. The mixture is melted and then solidified. The solidified product is annealed to form a uniform microstructure.

Abstract: A Ti--Al intermetallic compound has a compressibility of at least 25% at room temperature and a superior high temperature oxidation resistance and consists essentially of about 40 to 52 atomic percent of Ti, about 48 to 60 atomic percent of Al, and 10 to 1000 atomic ppm of at least one of P, As, Se, or Te.

Abstract: This invention relates to TiAl based intermetallic compound alloy and process for producing; the object of this invention is to improve high temperature deformability. The alloy comprises basic components: Ti.sub.y AlCr.sub.x, wherein 1%.ltoreq.X.ltoreq.5%, 47.5%.ltoreq.Y.ltoreq.52%, and X+2Y.gtoreq.100%, and comprises a fine-grain structure with a .beta. phase precipitated on a grain boundary of equiaxed .gamma. grain having grain size of less than 30 .mu.m, and possessing a superplasticity such that the strain rate sensitivity factors (m value) is 0.40 or more and tensile elongation is 400% or more tested at 1200.degree. C. and a strain rate of 5.times.10.sup.-4 S.sup.-1.

Abstract: A chip network resistor includes a plurality of discrete electrodes and common electrodes which are connected to a plurality of resistance elements according to a predetermined pattern. The configuration of the common electrodes is larger more than that of the discrete electrodes. Thereby, the contact resistance between the terminal of a measuring instrument and a common electrode is reducible when a value of resistance is measured.

Abstract: The present invention provides a Ti--Al intermetallic compound sheet of a thickness in the range of 0.25 to 2.5 mm formed of a Ti--Al intermetallic compound of 40 to 53 atomic percent of Ti, 0.1 to 3 atomic percent of at least one of material selected from the group consisting of Cr, Mn, V and Fe, and the balance of Al, and a Ti--Al intermetallic compound sheet producing method comprising the steps of pouring a molten Ti--Al intermetallic compound of the foregoing composition into the mold of a twin drum continuous casting machine, casting and rapidly solidifying the molten Ti--Al intermetallic compound to produce a thin cast plate of a thickness in the range of 0.25 to 2.5 mm and, when necessary, subjecting the thin cast plate to annealing and HIP treating. The Ti--Al intermetallic compound sheet has excellent mechanical and surface properties.

Abstract: This invention relates to TiAl based intermetallic compound alloy and process for producing; the object of this invention is to improve high temperature deformability. The alloy comprises basic components: Ti.sub.y AlCr.sub.x, wherein 1%.ltoreq.X.ltoreq.5%, 47.5%.ltoreq.Y.ltoreq.52%, and X+ 2Y.gtoreq.100%, and comprises a fine-grain structure with a .beta. phase precipitated on a grain boundary of equiaxed .gamma. grain having grain size of less than 30 .mu.m, and possessing a superplasticity such that the strain rate sensitivity factors (m value) is 0.40 or more and tensile elongation is 400% or more tested at 1200.degree. C. and a strain rate of 5.times.10.sup.-4 S.sup.-1.

Abstract: A continuous thin sheet of a TiAl intermetallic compound consisting of from 35 to 44 wt % Al and the balance Ti and unavoidable impurities, having a thickness of from 0.2 to 3 mm, and having a solidified, as-cast structure comprising columnar crystals extending from both surfaces of the sheet toward the center of the sheet thickness, and a process for producing the same by using a twin-roll type continuous casting procedure.

Abstract: A continuous thin sheet of a TiAl intermetallic compound consisting of from 35 to 44 wt % Al and the balance Ti and unavoidable impurities, having a thickness of from 0.2 to 3 mm, and having a solidified, as-cast structure comprising columnar crystals extending from both surfaces of the sheet toward the center of the sheet thickness, and a process for producing the same by using a twin-roll type continuous casting procedure.