Abstract: A piezoelectric vibrator includes a piezoelectric substrate including a first surface, a second surface that is opposites to the first surface, and a connection part that connects the first surface and the second surface to each other, and a pair of excitation electrodes disposed respectively on the first surface and the second surface. The connection part includes a plurality of protruding parts disposed in an area between the excitation electrode and an outer edge of the piezoelectric substrate. Top parts of the protruding parts are arranged so that the closer to the outer edge the top part is, the closer to the second surface the top part is, and lower parts of the protruding parts adapted to connect the adjacent protruding parts to each other are arranged so that the closer to the outer edge the lower part is, the closer to the second surface the lower part is.

Abstract: A piezoelectric vibrator includes a piezoelectric substrate including a first surface, a second surface that is opposites to the first surface, and a connection part that connects the first surface and the second surface to each other, and a pair of excitation electrodes disposed respectively on the first surface and the second surface. The connection part includes a plurality of protruding parts disposed in an area between the excitation electrode and an outer edge of the piezoelectric substrate. Top parts of the protruding parts are arranged so that the closer to the outer edge the top part is, the closer to the second surface the top part is, and lower parts of the protruding parts adapted to connect the adjacent protruding parts to each other are arranged so that the closer to the outer edge the lower part is, the closer to the second surface the lower part is.

Abstract: A vibrating element includes a piezoelectric substrate having an excitation section adapted to excite a thickness-shear vibration, and provided with a step section in each of side surfaces on both ends, and a peripheral section having a thickness smaller than a thickness of the excitation section, and the peripheral section has at least one projection section disposed on both principal surfaces in an area where a vibratory displacement when the excitation section excites a vibration is sufficiently attenuated.

Abstract: A piezoelectric vibration element includes a piezoelectric substrate including (i) an excitation portion and (ii) a peripheral portion that is integrally arranged at a periphery of the excitation portion and whose thickness is smaller than that of the excitation portion. The piezoelectric vibration element further includes excitation electrodes that are arranged in a front-and-rear relationship on front and rear principal faces of the piezoelectric substrate. The excitation portion includes a first portion that is at a location of a maximum thickness of the excitation portion and a side face that is connected to (i) a principal face of the first portion and (ii) a principal face of the peripheral portion. The side face includes level difference portions having a level difference and a face that has no level difference from the principal face of the first portion to the principal face of the peripheral portion.

Abstract: A piezoelectric resonator element includes a piezoelectric substrate formed of an AT-cut quartz crystal substrate in which the thickness direction thereof is a direction parallel to the Y? axis; and excitation electrodes disposed so as to face vibrating regions on both front and rear principal surfaces of the piezoelectric substrate. The piezoelectric substrate includes a rectangular excitation portion in which sides parallel to the X axis are long sides thereof, and sides parallel to the Z? axis are short sides thereof; and a peripheral portion having a smaller thickness than the excitation portion and formed around the excitation portion. Each of side surfaces of the excitation portion extending in a direction parallel to the X axis is present in one plane, and each of side surfaces of the excitation portion extending in a direction parallel to the Z? axis has a step.

Abstract: A piezoelectric vibration element includes: a piezoelectric substrate; excitation electrodes that are arranged so as to face each other on both principal faces of the piezoelectric substrate; drawn-out electrodes; and pads. The piezoelectric substrate includes an excitation portion that is located at the center and a peripheral portion that is thin-walled to be thinner than the thickness of the excitation portion and is disposed on a peripheral edge thereof. The pads have support areas that fix the piezoelectric substrate to a support member at positions of the piezoelectric substrate corresponding to corner portions. The excitation electrodes are formed over the excitation portion and a vibration area that is at least a part of the peripheral portion.

Abstract: When a size from a main surface of an outer edge to a step of a first stage of a vibration section is Md1, a size from the step of the first stage to a step of a second stage is Md2, a density of materials of the substrate is dA, a density of materials of the excitation electrode is dB, and a thickness of the excitation electrode on a main surface of a mesa of the second stage is tB, a relationship of ((Md2+(dB/dA)×tB))/Md1?1.4 is satisfied.

Abstract: A piezoelectric vibration element includes: a piezoelectric substrate; excitation electrodes that are arranged so as to face each other on both principal faces of the piezoelectric substrate; drawn-out electrodes; and pads. The piezoelectric substrate includes an excitation portion that is located at the center and a peripheral portion that is thin-walled to be thinner than the thickness of the excitation portion and is disposed on a peripheral edge thereof. The pads have support areas that fix the piezoelectric substrate to a support member at positions of the piezoelectric substrate corresponding to corner portions. The excitation electrodes are formed over the excitation portion and a vibration area that is at least a part of the peripheral portion.

Abstract: A vibrating element includes a piezoelectric substrate having an excitation section adapted to excite a thickness-shear vibration, and provided with a step section in each of side surfaces on both ends, and a peripheral section having a thickness smaller than a thickness of the excitation section, and the peripheral section has at least one projection section disposed on both principal surfaces in an area where a vibratory displacement when the excitation section excites a vibration is sufficiently attenuated.

Abstract: A piezoelectric resonator element includes a piezoelectric substrate formed of an AT-cut quartz crystal substrate in which the thickness direction thereof is a direction parallel to the Y? axis; and excitation electrodes disposed so as to face vibrating regions on both front and rear principal surfaces of the piezoelectric substrate. The piezoelectric substrate includes a rectangular excitation portion in which sides parallel to the X axis are long sides thereof, and sides parallel to the Z? axis are short sides thereof; and a peripheral portion having a smaller thickness than the excitation portion and formed around the excitation portion. Each of side surfaces of the excitation portion extending in a direction parallel to the X axis is present in one plane, and each of side surfaces of the excitation portion extending in a direction parallel to the Z? axis has a step.

Abstract: A wet cleaning apparatus can remove trace heavy metals, colloidal matter or other impurities contained in ultra-pure water to be used as rinse water in semiconductor cleaning processes and suppress deposit of trace impurities such as heavy metals or other particles that would otherwise cause characteristics of such devices to deteriorate. A wet cleaning apparatus for rinsing with ultra-pure water as a rinse liquid by supplying ultra-pure water through a piping to a rinse location inside the apparatus. The rinse location is a point of use of the ultra-pure water. The wet cleaning apparatus includes a module filled with porous film in which polymer chains having at least one of an anion exchange group, a cation exchange group, and a chelating group are held in the middle of the piping positioned inside the apparatus. The wet cleaning apparatus further includes a means for adding hydrogen gas to the rinse liquid.

Abstract: A cleaning method capable of processing at room temperatures without conducting heating, uses little chemicals and water, and does not require special devices or materials. The chemical cleaning processes and rinse processes employ pure water or ultrapure water in a semiconductor wet cleaning process, rinse water or chemicals which suppresses formation of surface oxide films, removes particles and prevent their redeposition, and aids in the hydrogen termination of the silicon atoms. The cleaning method of the resent invention includes cleaning which is conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF, H2O, and surfactant, while applying vibration having a frequency of 500 kHz or more, cleaning conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF and H2O in order to remove oxide films, and cleaning which is conducted using pure water.