Abstract: A semiconductor device includes a first transistor including a normally-on transistor with a first source, a first drain, and a first gate and a second transistor including a normally-off transistor with a second source, a second drain electrically connected to the first source, and a second gate. A first gate signal, which turns on later than a second gate signal at the time of turn-on of the device and turns off earlier than the second gate signal at the time of turn-off of the device, is input to the first gate. The second gate signal, which turns on earlier than the first gate signal at the time of the turn-on and turns off later than the first gate signal at the time of the turn-off, is input to the second gate. An amount of delay of each of the first gate signal and the second gate signal is set independently.

Abstract: Provided is a power conversion circuit and a control system in which radiated noise of the entire circuit is reduced. A power conversion circuit including at least: a switching element (e.g. a MOSFET, etc.) and a diode (e.g. a commutating diode, etc.): wherein the power conversion circuit is a single-switch power conversion; and the diode is a gallium oxide-based Schottky barrier diode.