Abstract: In an apparatus not connected to a network can perform the reproduction within a valid viewing period. Also, in order to facilitate the change of the encryption algorithms of a password, a program recorded on the disk comprises the steps of acquiring a first medium identification number recorded on a recording medium, acquiring the current time, acquiring a password, calculating a second medium identification number and the expiry date of the valid viewing period from the password, comparing the first medium identification number with the second medium identification number, and comparing the current time with the expiry date of the valid viewing period. In the case where the first medium identification number coincides with the second medium identification number and the current time has not passed the expiry date of the valid viewing period, then the predetermined information is reproduced from the recording medium.

Abstract: Write-once read-many disks have a directory for file management in every session and files existing in other sessions can be managed in this directory. For write-once read-many disks for music use, however, there is no directory for file management and it has been impossible to access a session and reproduce music in other session. The present invention enables music CDs to take full advantage of multisession recording and realizes multisession-formatted music CDs wherein TOCs (Table of Contents) are recorded in the lead-in areas of the multiple sessions, each TOC in which the information for managing pieces of music (tracks) in other sessions has been registered.

Abstract: In a digital broadcasting receiver, an identification information of the image or audio signal detected from the received digital information, and an identification information stored in an identification information memory means are compared one after another. The image/audio mute means is controlled not to output a disordered image/audio signal on the basis of the comparison result. On the basis of the comparison result, the viewer is informed by the identification information output means that resolution/quality of the received image/audio signal is changed. The identification information showing the image resolution and audio quality is inserted into digital information, and the digital information with the identification information is transmitted in a digital broadcasting transmitter.

Abstract: When recording operation is stopped due to, for example, unexpected interruption of electric power supply in the course of the recording operation on a real time basis, a technique of repairing a moving picture and sound data recorded on a recording medium until the recording is stopped, to thereby restore management information data which enables random access and special reproduction is provided. A video/audio/management information multiplexing means is so implemented as to generate data required for generating management information data for allowing random access to the recording medium and effectuating special reproduction of the recording medium, for thereby multiplexing the data required for generating the management information data, encoded video data outputted from a video encoding means and encoded audio data outputted from an audio encoding means.

Abstract: When recording operation is stopped due to, for example, unexpected interruption of electric power supply in the course of the recording operation on a real time basis, a technique of repairing a moving picture and sound data recorded on a recording medium until the recording is stopped, to thereby restore management information data which enables random access and special reproduction is provided. A video/audio/management information multiplexing means is so implemented as to generate data required for generating management information data for allowing random access to the recording medium and effectuating special reproduction of the recording medium, for thereby multiplexing the data required for generating the management information data, encoded video data outputted from a video encoding means and encoded audio data outputted from an audio encoding means.

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy.

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy.

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy.

Abstract: A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.

Abstract: A semiconductor device having a reflecting layer consisting of unit semiconductors each consisting of two or more semiconductor films of different compositions. The thickness of the unit semiconductors varies continuously or in steps in the direction of thickness of the reflecting layer, preferably decreases in the direction toward the light incidence surface of the layer. For example, the reflecting layer has a varying-thickness portion whose unit semiconductors have a continuously varying thickness, and may include an iso-thickness portion whose semiconductors have the same thickness. The composition at the interface of the adjacent films preferably changes to mitigate a lattice mismatch which causes crystal defects of the layer.

Abstract: A light-emitting diode having a light-generating layer for generating an electromagnetic radiation by electroluminescence, a light-emitting surface through which the radiation is emitted, and a light-reflecting layer remote from the light-emitting surface, for reflecting a portion of the radiation toward the light-generating layer so that the radiation reflected by the light-reflecting layer is also emitted through the light-emitting surface. The light-reflecting layer consists of two or more interference type reflecting layers which include one or more reflecting layers each capable of most efficiently reflecting a wave whose wavelength is longer than the nominal wavelength of the radiation. The light-emitting surface may have irregularity for irregularly reflecting the radiation, or an anti-reflection layer formed thereon by deposition.

Abstract: A lead frame for a multichip type semiconductor device includes at least two square or rectangular islands each of which has four sides and is supported by island supports. Each of the sides of the islands is not parallel to each of the sides of the lead frame to reduce an unwanted bend of leads.

Abstract: A packaged semiconductor device having a semiconductor chip mounted on a bed part, a first molded layer which seals the bed part and the semiconductor chip such that the back of the bed part is exposed, a heat sink under the exposed back of the bed part and with a prescribed distance between it and the back of the bed part a second molded layer which is formed such that it covers the outside of the heat sink and the first molded layer, and also fills the gap between the exposed surface of the bed part and the heat sink, and leads which are disposed such that they pass through the second molded layer and their ends are in the first molded layer, and which are connected via bonding wires to the internal terminals of the semiconductor chip.

Abstract: A wire bonding capillary for a bonding process comprises an elongated capillary body having an axial bore through the body for receiving a wire of a predetermined diameter to be bonded, and a working face on one end of the body for applying force to the bonding wire during the bonding process. The working face includes a first surface portion surrounding the bore and having a first radius of curvature, and a second surface portion adjacent to the first surface portion and having a second radius of curvature smaller than the first radius curvature.

Abstract: A highly magnetic Hall element comprising a substrate, a Hall element chip mounted on the substrate, and a magnetic member interposed between the substrate and the chip. The magnetic member increases the coercive force of the element, and is formed by laminating resin layers mixed with powder having a high magnetic permeability, one upon another, by stencil printing on that side of a semiconductor wafer in which a Hall element is mounted. The wafer and the magnetic member are diced together, to provide a Hall element chip. The magnetic member formed on the Hall element chip is adhered to substrate, with half-cured surface put in contact with the substrate.

Abstract: An apparatus and a method for inspecting semiconductor devices, where a focused laser beam scans the semiconductor device, and the reflected beam thereof indicating height information of the reflection positions on the semiconductor device is detected for producing detected signals. The detected signals are compared with predetermined acceptance levels of height and distance.

Abstract: Disclosed is a method of manufacturing a semiconductor device which comprises the step of forming grooves in the form of a grid on the upper surface of a semiconductor wafer formed with elements, the step of grinding or polishing the underside of the semiconductor wafer to thereby reduce the thickness thereof, the step of applying a first single-sided, self-adhesive sheet onto the underside of the semiconductor wafer, and the step of stretching the second single-sided, self-adhesive sheet so as to space out each other a multiplicity of semiconductor chips divided along the gridlike grooves of the semiconductor wafer. Each semiconductor chip is picked up and mounted on a lead frame.

Abstract: A system for discriminating between the front and back surfaces of a tape over the entire length thereof, which comprises a device for discriminating the tape surfaces at least at one end of the tape, and a device for detecting any twisted section at an intermediate point of the moving tape on the basis of a change in the projected area of the tape in the tape width direction.