Abstract: Various failure rates are supposed for each facility, and an optimal maintenance plan is made. A maintenance planning apparatus includes a failure rate model generation unit that generates a failure rate model on the basis of failure probability information which is set for an O&M asset by a user, a simulation execution unit that executes simulation regarding a failure which possibly occurs in the O&M asset in a plurality of different conditions on the basis of the generated failure rate model, a KPI computation unit that computes a KPI corresponding to each of the plurality of different conditions on the basis of results of the simulation, and an analysis unit that analyzes the plurality of different conditions and KPIs respectively corresponding to the plurality of different conditions, so as to determine an optimal condition corresponding to the best KPI.

Abstract: A maintenance process flow for a plant is automatically generated based on a prediction result of a life of a pipe. A maintenance process flow generation device configured to generate a maintenance process flow for a plant including a plurality of pipes and a plurality of machines as elements, specifies a target pipe, extracts a maintenance range that is a combination of the elements as maintenance targets, determines necessity of a process required for maintenance on the plurality of elements that can be collectively maintained, generates a process flow defining an order relationship of processes executed in the maintenance of the target plant based on a result of the process necessity determination and master process flow information, evaluates workability of the process included in the process flow, calculates work time of the process flow based on a result of the workability evaluation, and outputs information presenting the maintenance range, the process flow and the work time.

Abstract: The disclosure can evaluate a relation between a procurement cost and an inventory value of a component on the basis of a future manufacturing plan, and select a more appropriate ordering mode. A device includes: a product design allocation unit configured to allocate a predetermined design pattern to a product constituent element at a predetermined application rate which is based on a future design plan; a procurement cost computation unit configured to compute, for each ordering mode, a procurement cost of a component which is used in the product constituent element; an inventory value computation unit configured to compute, for each ordering mode, an inventory value of the component; and an ordering mode evaluation unit configured to evaluate a ratio of the procurement cost and the inventory value.

Abstract: Various failure rates are supposed for each facility, and an optimal maintenance plan is made. A maintenance planning apparatus includes a failure rate model generation unit that generates a failure rate model on the basis of failure probability information which is set for an O&M asset by a user, a simulation execution unit that executes simulation regarding a failure which possibly occurs in the O&M asset in a plurality of different conditions on the basis of the generated failure rate model, a KPI computation unit that computes a KPI corresponding to each of the plurality of different conditions on the basis of results of the simulation, and an analysis unit that analyzes the plurality of different conditions and KPIs respectively corresponding to the plurality of different conditions, so as to determine an optimal condition corresponding to the best KPI.

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, stable processed results can be obtained even when variation occurs in processes.

Abstract: A production plan making assistance apparatus for a product including a plurality of components, the production plan making assistance apparatus comprising: a storage unit; an input-output unit; and an operation unit; wherein the operation unit reads out the information stored in the storage unit and assigns a start date and a completion date in each process based on a process in which consumption of the production resource lies within the production ability and which synchronizes with the lead time, and wherein the operation unit specifies the completion date assigned to each previous process in a plurality of synchronizing processes, specifies a start date assigned to the process continuing to the specified completion date, calculates a total period between the specified completion date and the specified start date as a total non-synchronization degree and outputs the calculated total non-synchronization degree to the input-output unit.

Abstract: Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a c

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen.

Abstract: Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ?X as an input and ?Y as an output. In etching process control, ?X (manipulated volume) is calculated from ?Y (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen.

Abstract: There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching.

Abstract: Semiconductor manufacturing equipment includes: a controller controlling driving and processes of various parts of the semiconductor manufacturing equipment, and a sensor monitoring each physical amount in the semiconductor manufacturing equipment or a status of each chemical response amount; a database; and an arithmetic section executing: processing of reading out equipment data, calculating a correlation matrix between time points based on a plurality of pieces of signal data to be compared, calculating eigen values and eigen vectors from the correlation matrix, and calculating principal component scores by principal component analysis; processing of comparing magnitudes of the eigen values of the principal components, arranging the eigen values in descending order to display a list thereof; and processing of displaying a scatter diagram where the principal component scores of the respective signals are plotted in a feature space selecting the principal component corresponding to the eigen value having a c

Abstract: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Abstract: Based on a model for determining optical emission intensity values Y at wavelengths from actuator values X of an etching apparatus, X is calculated from Y to achieve preferable Run-to-Run control over Y. A relation between X and Y is defined as a control model (matrix model C1, ratio-constraint model C2) based on an algebraical expression with ?X as an input and ?Y as an output. In etching process control, ?X (manipulated volume) is calculated from ?Y (controlled volume) using the control model, based on a non-control optical emission intensity value Y, to set X (S1) for the etching process, during which Y is monitored. Based on an actual value for Y, a non-control optical emission intensity value Y to be used in the next wafer etching process is calculated.

Abstract: An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process. A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.

Abstract: There is provided an etching apparatus in which, without setting the information of the substance and the chemical reaction, a small number of representative wavelengths can be selected from a waveform at a lot of wavelengths, and an analysis process of etching data which needs large man-hours can be eliminated to efficiently set the monitoring of the etching.

Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen.

Abstract: In a manufacturing method of a semiconductor photonic device substrate, before multi-layer films different in material composition are successively and gradually crystal-grown in one chamber, an inter-layer growth rate model showing a relation in growth rate between each layer is defined, a growth rate of a film corresponding to at least one or more layers is obtained by actual crystal growth using an individual substrate, a growth rate of a film corresponding to other layers is estimated from the obtained growth rate by the inter-layer growth rate model, and a growth time is determined in accordance with a film thickness of each layer of the semiconductor photonic device substrate based on the actually obtained growth rate and the estimated growth rate. These steps are carried out by using a computer system connected to an MOCVD equipment, and then, a crystal growth of the semiconductor photonic device substrate is performed.

Abstract: An advanced process control (APC) system. The APC system comprises a database for receiving process data from a measurement tool for a plurality of process runs and for storing the process data. A lambda tuner determines a tuned-lambda value corresponding to a process-capability-index value based on upper and lower process control limits and statistics derived from the process data. A process-run controller updates a recipe value based on the received process data and the tuned-lambda value.

Abstract: An etching process state judgment method comprising: a spectral data obtaining step, in which an optical emission spectrum distribution is obtained by monitoring optical emission during an etching process of a plurality of wafers; a peak detection step, in which peaks are detected from the optical emission spectrum distribution at a specific time point during the etching process, to obtain peak characteristics; a common peak identifying step, in which peaks common to the wafers are identified among the peaks detected in the peak detection step; and a state detection step, in which the characteristics are compared regarding the common peaks, to detect a state of each wafer in the etching process. A state (anomaly or normalcy) of an etching process is detected from optical emission spectrum distribution at the time of etching process, by a simple method without assuming substances.