Abstract: A vehicle driving support device performs driving support of supporting a driver's driving of a host vehicle based on traffic information. The vehicle driving support device performs a first process of acquiring traffic information associated with traveling of the host vehicle as first traffic information from forward information of the host vehicle detected by a forward information detecting device, performs a second process of acquiring traffic information associated with traveling of the host vehicle out of traffic information stored in a database as second traffic information by comparing a current position of the host vehicle with map data stored in the database, and performs the driving support based on the first traffic information even when the second traffic information is acquired until a predetermined first condition is satisfied when the first traffic information has been acquired.

Abstract: An apparatus for identifying a road being traveled includes one or more processors configured to: compare a latest predetermined section of a trajectory of a vehicle with a first map representing roads to detect a section closest to a current position of the vehicle included in a road that matches the trajectory the best of the roads represented in the first map as a candidate for a road being traveled by the vehicle, compare a sensor signal representing environment around the vehicle with a second map representing individual lanes on roads to detect a lane being traveled by the vehicle, identify the candidate for the road as the road being traveled by the vehicle when the detected lane is included in the candidate, and identify a road including the detected lane as the road being traveled by the vehicle when the detected lane is not included in the candidate.

Abstract: A vehicle driving support device performs driving support of supporting a driver's driving of a host vehicle based on traffic information. The vehicle driving support device performs a first process of acquiring traffic information associated with traveling of the host vehicle as first traffic information from forward information of the host vehicle detected by a forward information detecting device, performs a second process of acquiring traffic information associated with traveling of the host vehicle out of traffic information stored in a database as second traffic information by comparing a current position of the host vehicle with map data stored in the database, and performs the driving support based on the first traffic information even when the second traffic information is acquired until a predetermined first condition is satisfied when the first traffic information has been acquired.

Abstract: Provided are a hygroscopic material having a transparent base material, a upper layer including a vinyl acetate resin, and a hygroscopic layer which is arranged between the base material and the upper layer to be adjacent to the upper layer and includes a moisture-absorbing agent which is an inorganic salt, and a resin, a method for producing the same, and a packaging material.

Abstract: A solid-state imaging device includes a plurality of pixel electrodes disposed two-dimensionally, an opposite electrode provided opposite to the pixel electrodes, and an organic layer formed of an organic material and provided between the pixel electrodes and the opposite electrode, in which a protrusion and recess section is formed on a surface of the organic layer on the opposite electrode side, and the protrusion and recess section includes a first protrusion and recess section formed at a position opposite to each pixel electrode and a second protrusion and recess section formed at a position opposite to the space between each pixel electrode.

Abstract: A solid-state imaging device includes a plurality of pixel electrodes disposed two-dimensionally, an opposite electrode provided opposite to the pixel electrodes, and an organic layer formed of an organic material and provided between the pixel electrodes and the opposite electrode, in which a protrusion and recess section is formed on a surface of the organic layer on the opposite electrode side, and the protrusion and recess section includes a first protrusion and recess section formed at a position opposite to each pixel electrode and a second protrusion and recess section formed at a position opposite to the space between each pixel electrode.

Abstract: An imaging device includes a substrate, lower electrodes formed on the substrate, an organic layer formed on the lower electrodes and generating electric charges in response to irradiation with light, an upper electrode formed on the organic layer and transmitting the light, a protective film formed on the upper electrode, and a patterned organic film formed on the protective film. The protective film is composed of at least one layer and has a total thickness of 30 to 500 nm. The protective film of a single layer type has an internal stress of ?50 MPa to +60 MPa in the whole of the protective film.

Abstract: The solid-state imaging device in which pixel electrodes, a photoelectric conversion portion having an organic film generating electric charge in response to incident light, a transparent counter electrode, and a sealing layer are formed on a substrate is produced by the method including causing a metal mask to come into close contact with a substrate surface, on which the pixel electrodes are disposed, by magnetic force; forming the organic film by vapor-depositing an organic substance to the substrate surface on which the pixel electrodes are disposed; removing the metal mask after the organic film is formed; forming the counter electrode on the organic film; and forming the sealing layer covering the counter electrode, wherein the metal mask has undergone half etching to have a half etching portion and comes into close contact with the substrate surface such that a lower surface of the half etching portion faces the pixel electrodes.

Abstract: An imaging device includes a substrate, lower electrodes formed on the substrate, an organic layer formed on the lower electrodes and generating electric charges in response to irradiation with light, an upper electrode formed on the organic layer and transmitting the light, a protective film formed on the upper electrode, and a patterned organic film formed on the protective film. The protective film is composed of at least one layer and has a total thickness of 30 to 500 nm. The protective film of a single layer type has an internal stress of ?50 MPa to +60 MPa in the whole of the protective film.

Abstract: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

Abstract: The solid-state imaging device in which pixel electrodes, a photoelectric conversion portion having an organic film generating electric charge in response to incident light, a transparent counter electrode, and a sealing layer are formed on a substrate is produced by the method including causing a metal mask to come into close contact with a substrate surface, on which the pixel electrodes are disposed, by magnetic force; forming the organic film by vapor-depositing an organic substance to the substrate surface on which the pixel electrodes are disposed; removing the metal mask after the organic film is formed; forming the counter electrode on the organic film; and forming the sealing layer covering the counter electrode, wherein the metal mask has undergone half etching to have a half etching portion and comes into close contact with the substrate surface such that a lower surface of the half etching portion faces the pixel electrodes.

Abstract: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle ? of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as ?.

Abstract: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

Abstract: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

Abstract: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle ? of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as ?.

Abstract: An imaging device includes a plurality of lower electrodes, an upper electrode, an organic photoelectric conversion layer and a passivation layer. The plurality of lower electrodes are arranged in a two dimensional pattern above a substrate. The upper electrode is arranged above the plurality of lower electrodes so as to oppose the lower electrodes. The organic photoelectric conversion layer is sandwiched between the plurality of lower electrodes and the upper electrode. The passivation layer is provided above the upper electrode and covers the upper electrode. An angle which an end side surface of the lower electrode forms with respect to a surface of a lower layer supporting the lower electrode is 45-degree or more. The passivation layer is formed from a plurality of layers. Film stress of the entire passivation layer ranges from ?200 MPa to 250 MPa.

Abstract: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.