Abstract: An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

Abstract: A control method for a spectrum waveform of a laser beam output from a laser apparatus to an exposure apparatus includes acquiring a longitudinal chromatic aberration of the exposure apparatus, setting a target value of an evaluation value of the spectrum waveform by using a relation between the longitudinal chromatic aberration and the evaluation value, and controlling the spectrum waveform by using the target value.

Abstract: A laser device connectable to an exposure apparatus includes a spectrometer configured to generate a measurement waveform from an interference pattern of laser light output from the laser device; and a processor configured to calculate a first spectral waveform indicating a relationship between a wavelength and a light intensity using the measurement waveform, calculate a representative waveform included in a wavelength range of the first spectral waveform, and calculate an evaluation value of the first spectral waveform using a first integration value obtained by integrating, over the wavelength range, a product of a function of a wavelength deviation from the representative wavelength and the light intensity.

Abstract: An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.

Abstract: An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.