Abstract: A semiconductor device includes a semiconductor layer including an electron transit layer and an electron supply layer; a gate electrode, a source electrode and a drain electrode, the gate electrode, the source electrode and the drain electrode being disposed on the semiconductor layer; and a metal film connected to the gate electrode, wherein the semiconductor layer includes an active region, and an inactive region surrounding the active region in plan view, wherein the gate electrode includes, in plan view, a first region overlapping the active region, and two second regions having the first region interposed therebetween, the two second regions both overlapping the inactive region, and wherein the metal film contacts the two second regions.

Abstract: The present invention judges whether an internal combustion engine is operated by a special operation method in which a fuel cut is performed more frequently than predefined depending on the operation of an accelerator pedal. The present invention provides a shorter purge resumption period subsequently to recovery from a fuel cut when it is judged that the internal combustion engine is operated by the special operation method than when it is judged that the internal combustion engine is not operated by the special operation method. The purge resumption period is a period during which a purge gas flow rate is lower than during a steady operation.

Abstract: The present invention judges whether an internal combustion engine is operated by a special operation method in which a fuel cut is performed more frequently than predefined depending on the operation of an accelerator pedal. The present invention provides a shorter purge resumption period subsequently to recovery from a fuel cut when it is judged that the internal combustion engine is operated by the special operation method than when it is judged that the internal combustion engine is not operated by the special operation method. The purge resumption period is a period during which a purge gas flow rate is lower than during a steady operation.