Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference member, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion.

Abstract: A photosensor with improved correction of image signals has a first photosensor portion including a plurality of photoelectric converting devices for reading an object and providing image signals thereof. A second photosensor portion includes a plurality of photoelectric converting devices and provides reference signals from light reflected from a reference number, or light received directly from a light source. Correction circuitry corrects the image signals from the first photosensor portion in accordance with the reference signals output from the second photosensor portion. Preferably, the photoelectric converting devices of the first and second photosensor portions are arranged in adjacent, parallel lines on the same substrate. Preferably, reference signals from the converting devices of the second photosensor are used by the correction circuitry to correct the electrical signals from substantially adjacent converting devices of the first photosensor portion.

Abstract: The present invention relates to a method of driving a thin film transistor type optical sensor, having a gate electrode, a gate insulating layer, a thin film semiconductor layer, an ohmic contact layer, a source electrode and a drain electrode.The thin film transistor type optical sensor is driven by providing the gate electrode with a threshold voltage for a thin film transistor provided adjacent to the thin film transistor type optical sensor or a voltage based on the threshold voltage.

Abstract: A photoelectric conversion device comprises a plurality of blocks each having a plurality of sensor elements each consisting of a combination of a photoelectric conversion section, a charge storage section connected to the photoelectric conversion section, and a switch section arranged in a path for reading a charge from said charge storage section. Gate lines for operating a plurality of switch sections in a given block are commonly connected. Read lines from said switch sections are commonly connected in units of sensor elements corresponding to each block to constitute a wiring matrix. The gate lines are arranged between the adjacent common read lines of the wiring matrix.

Abstract: A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; and insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.

Abstract: An image reading device has photo-sensor units arranged in the form of an array constituting a line sensor. Each sensor unit includes a light-shielding layer formed on a light-transmitting substrate, an insulating layer formed on the light-shielding layer, a semiconductor layer disposed on the insulating layer, and a pair of upper electrodes provided on the semiconductor layer and spaced from each other. The space between the upper electrodes constitutes a light-receiving window through which the semiconductor layer receives light applied from the reverse side of the substrate onto the surface of an image-carrying original and reflected by the original. Thus, the semiconductor layer produces an electric signal representing the read image. The light-shielding layer is made of an electrically conductive material such as a metal.

Abstract: A photoelectric conversion device comprises plural photoelectric conversion elements arranged in a linear array, plural common lines each connecting at least two of individual output electrodes of the plural photoelectric conversion elements, conductor layers of a constant potential provided in the vicinity of crossing portions of the individual output electrodes and said common lines, and wirings mutually connecting the conductor layers.

Abstract: A semiconductor device wherein m.times.n switch means connected to m.times.n functional elements for transferring signals by switching, and a matrix wiring section having wiring connected respectively to said m.times.n switching means are formed on a common substrate, and wherein said matrix wiring section comprises a lamination structure formed by stacking, at least, a first conductive layer, a first insulating layer, a second conductive layer, a second insulating layer, a semiconductor layer, and a third conductive layer in this order.

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion section for receiving light reflected from an original, and an electric charge storage section having an electrode electrically connected to an electrode of the photoelectric conversion unit. The electric charge storage section comprises a lamination structure including a dielectric layer and two electrodes respectively provided at upper and lower sides of the dielectric layer. The electrode closest to the original is maintained at a constant potential.

Abstract: An electronic device includes a plurality of thin film transistors (TFTs) which commonly use source and drain electrodes and which are arranged in parallel in the channel direction. Each TFT comprises a thin semiconductor film formed on a substrate. A gate insulative layer is arranged between at least one surface of the thin semiconductor film and a gate electrode. A source electrode and a drain electrode are arranged over at least one of the surfaces of the thin semiconductor film. With this electronic device, the parasitic capacitances which are generated among the gage, source, and drain electrodes are constant without depending on the patterning accuracy, and the offset components which are applied to the output signal hardly cause a variation. Thus, the good TFT characteristic is obtained.

Abstract: A photo-electric converter having linearly arranged photo-electric elements. Common lines are each connected to at least two discrete output electrodes of corresponding photoelectric elements. A conductor arranged between insulator layers at crosspoints of the discrete output electrodes and the common lines is maintained at a constant potential. A wiring is formed between the discrete electrode and the common electrode and is maintained at a constant potential.

Abstract: A photoelectric conversion device has photoelectric conversion element of N.times.M arranged in a one-dimensional array on a substrate and connected to common lines of a number M in a matrix wiring, and also having a transparent protective layer on the photoelectric conversion elements and common lines of the matrix wiring, comprising wirings maintained at a constant potential at least at the outside of one of the array of the common lines of the matrix wiring.

Abstract: A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Abstract: A photoelectric conversion device having a matrix of N.times.M photoelectric conversion element is arranged in a one-dimensional array on a substrate and connected to common lines of a number M in a matrix wiring. A transparent protective layer is provided on the photoelectric conversion elements and common lines of the matrix wiring, comprising wirings maintained at a constant potential at least at both sides of one of the array of the common lines of the matrix wiring.

Abstract: A photosensor having an electrically insulating, translucent substrate; an opaque conductive layer formed on the substrate; an insulating layer formed on the conductive layer, and a semiconductive layer formed on the insulating layer for receiving light and providing a current corresponding thereto. A pair of electrodes are formed in contact with the semiconductor layer and define a light receiving window therebetween. The electrodes are formed so as to not substantially overlap the conductive layer. The conductive layer is supplied with a bias voltage corresponding to a polarity and an amount of carriers defining the current of the semiconductor layer and a voltage Va of a small absolute value during a non-reading period of the photosensor.

Abstract: There is a photoelectric converting apparatus in which (N.times.M) photoelectric converting elements arranged in a one-dimensional array form are connected to N voltage applying electrodes and M signal readout electrodes in a matrix form. In this apparatus, the wiring crossing portions of the matrix connection are provided on the side of the voltage applying electrodes, and the insulation of the wiring crossing portion is formed as the laminated structure by a photoconductive layer and a high resistance layer.

Abstract: A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

Abstract: A photoelectric conversion apparatus includes a plurality of one-dimensionally arranged photoelectric conversion elements, a plurality of common electrodes each for commonly connecting at least two of output individual electrodes of the plurality of photoelectric conversion elements, and separating electrodes respectively formed between the plurality of common electrodes so as to maintain potentials at a predetermined level. The number of intersections between the individual and separating electrodes are identical in the individual electrodes.

Abstract: A method of reading signals from a plurality of charge-storage devices in a charge-storage line sensor circuit so as to cause a switching device respectively corresponding to the plurality of charge-storage devices to sequentially read the stored signals and to sequentially reset the storage devices during a line read period. Dead time intervals are provided in the line read period between successive device read periods. A resetting operation for each storage device is performed in a dead time interval after the read operation for that storage device is completed.