Abstract: A thread forming tap includes a screw thread formed into a male thread shape with margin portions disposed to project in radial direction and relief portions having a diameter smaller than the margin portions, the margin portions and relief portions alternatively arranged and, thread forming tap causes the margin portions of the screw thread to cut into a surface layer portion of a prepared hole formed in a work to plastically deform the surface layer portion to form a female thread, margin portions are formed into a ridge line shape with a width dimension of zero at least at a thread bottom of the screw thread, and margin portions are formed into a ridge line shape with a width dimension of zero in a range from a thread bottom of the screw thread to a position between the thread bottom and an effective diameter position of the screw thread.

Abstract: A thread forming tap includes a screw thread formed into a male thread shape with margin portions disposed to project in radial direction and relief portions having a diameter smaller than the margin portions, the margin portions and relief portions alternatively arranged and, thread forming tap causes the margin portions of the screw thread to cut into a surface layer portion of a prepared hole formed in a work to plastically deform the surface layer portion to form a female thread, margin portions are formed into a ridge line shape with a width dimension of zero at least at a thread bottom of the screw thread, and margin portions are formed into a ridge line shape with a width dimension of zero in a range from a thread bottom of the screw thread to a position between the thread bottom and an effective diameter position of the screw thread.

Abstract: A liquid crystal display device capable of preventing a semiconductor element from malfunctioning due to the light which enters the semiconductor element from the display side opposed to a light source side. The liquid crystal display device comprises a first substrate (11), a second substrate and a liquid crystal sandwiched between the first substrate and the second substrate. The liquid crystal display device further comprises semiconductor elements (FG) formed over the first substrate and arranged in a matrix, and a light shielding film (BS) formed over the first substrate for blocking the light which would enter the semiconductor elements from the display face of the liquid crystal display device if not blocked.

Abstract: A method for forming a liquid crystal display device, which includes steps of forming a metal film over a substrate, patterning the metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element, and forming a first insulating film over the metal film. The steps further include forming a first polycrystalline-silicon layer over the first insulating film, and patterning the first polycrystalline-silicon layer to form a second capacitor electrode as a part of the first capacity element and a second capacity element, while additionally including the steps forming a second insulating film over the polycrystalline-silicon layer, forming a second polycrystalline-silicon layer over the second insulating film, and patterning the second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of the second capacity element.

Abstract: A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the field oxide film and a mask oxide film on the surface of the gate electrode, forming an opening m the mask oxide film and forming a memory oxide film on the gate electrode exposed thereat, providing a memory gate electrode of a size extending from over the memory oxide film to over the mask oxide film, and making the thickness of the memory oxide film thinner than the thickness of the mask oxide film.

Abstract: A semiconductor nonvolatile storage that is an inter-gate insulating film breakdown type memory is configured by providing a field oxide film on a semiconductor substrate 1, a gate electrode on the field oxide film and a mask oxide film on the surface of the gate electrode, forming an opening in the mask oxide film and forming a memory oxide film on the gate electrode exposed thereat, providing a memory gate electrode of a size extending from over the memory oxide film to over the mask oxide film, and making the thickness of the memory oxide film thinner than the thickness of the mask oxide film.

Abstract: A first device region is formed in a first well region provided on a semiconductor substrate and a second device region is formed in a second well region, both of which are separated by a field oxidation film, a memory transistor for writing a program is provided in the first device region, an address transistor controlling the writing is provided in the second device region, and a source region of the address transistor and a drain region of the memory transistor are connected by an interconnecting metal to structure a semiconductor nonvolatile memory device which can electrically perform writing only once.

Abstract: A distillation process is used to separate methanol from a mixture of methanol with methyl acrylate or methyl methacrylate, as well as from a mixture of methanol and water with methyl acrylate or methyl methacrylate with the use of an azeotropic solvent, which forms an azeotropic mixture with methanol. In distilling such a mixture by the use of a distillation column:(1) part of the condensate of vapors distilled over from the top of the distillation column top is returned to the top of the column;(2) the remaining condensate is separated into two layers;(3) the upper layer essentially composed of an azeotropic solvent from the two separated layers is fed to an intermediate portion of the distillation column;(4) the lower layer essentially composed of methanol from the above two separated layers is withdrawn from the distillation system; and(5) methyl acrylate or methyl methacrylate, or else, methyl acrylate or methyl methacrylate and water, are recovered from the bottom of the column.

Abstract: A method of preventing the interconnecting fine wires of a bonded semiconductor devices from moving from their preferred loop position after being bonded in an automatic wire bonder includes the step of automatically transferring the bonded semiconductor device to an insulating station prior to other operations. The interconnecting fine wires are coated in a manner which does not disturb or short the interconnecting wire which are pre-cured or cured before being transferred to a storage rack, or directly to a follow-on process step of a continuous production line.

Abstract: A washer pump for an automobile includes a substantially circular pump chamber receiving concentrically therein an impeller and having an inlet aligned with the center of the impeller and first and second outlets defined in a sidewall of the pump chamber and extending tangentially to the sidewall, and a directional control valve including a valve chamber connected in fluid communication with the pump chamber through the first outlet and also through the second outlet, and a valve element movably disposed in the valve chamber for selectively connecting the first and second outlets, respectively, to first and second washer nozzles of the automobile. The washer pump further includes a projection disposed between the first and second outlets and projecting inwardly from the sidewall of the pump chamber toward the impeller for substantially blocking the flow of a cleaning fluid between the first and second outlets, thereby increasing the pressure difference between the first and second outlets.