Abstract: The invention relates to a method for bleaching teeth in which a solution of a nitrogen-doped titanium oxide powder is contacted on a surface of the teeth and the surface of the teeth is irradiated to bleach the surface of the teeth-by activating a photocatalytic reaction.

Abstract: To eliminate a defect in conventional dental bleaching agent, that light for activating titanium oxide hardly reaches down to the titanium oxide at the teeth surface to be bleached, a dental bleaching agent set consists of two components of which the first component is attached to teeth surface and irradiation of light is followed after the second component is contacted on the teeth surface, the first component consisting of an organic solvent, containing at least one of a titanium oxide, a nitrogen doped titanium oxide, and a titanium oxinitride having photocatalytic activities, and preferably one or more of a metal oxide, a metal salt, and a metal powder, a thickener and water, the second component consisting of a compound that produces hydrogen peroxide in water, a thickener and a carrier.

Abstract: A method for bleaching teeth comprises steps of applying a solution containing nitrogen-deeped titanium oxide powder on a surface of teeth, and irradiating the applied part with light to bleach the teeth based on a photocatalytic action thus produced, and a bleaching agent for teeth suitable for carrying out the method comprises a solution containing nitrogen deeped titanium oxide powder, in which the nitrogen-deeped titanium oxide is preferably a photocatalytic substance having a Ti—O—N structure having a titanium oxide crystalline lattice containing nitrogen and exhibiting a photocatalytic action in a visible light region, the bleaching agent contains preferably 0.01 to 5% by weight of the nitrogen-deeped titanium oxide powder, the nitrogen-deeped titanium oxide powder has a specific surface area of from 10 to 500 m2/g, the solution contains water and/or an alcohol as a solvent, and the bleaching agent further contains preferably 0.

Abstract: A DRAM has, in one embodiment, a plurality of word lines each having its upper and side surfaces covered with a first insulating film, a plurality of bit lines each being provided so as to be insulated from and transverse to the word lines and being covered with a second insulating film, and a plurality of memory cells each provided at an intersection between one word line and one bit line and including a capacitor and a memory cell selection transistor, in which contact holes for connection between semiconductor regions and capacitors and between semiconductor regions and bit lines are formed in self-alignment and the second insulating film is made of a material having a permittivity smaller than that of the first insulating film.

Abstract: To provide an effective dental magnetic attachment for fixing a denture to an anchor tooth for both a molar and an anterior tooth, the dental magnetic attachment comprises a keeper having an adsorbing surface forming an externally convex curved line in a major axis and an externally convex curved line or a straight line in a minor axis continued to the externally convex curved line in the major axis and having a ratio of a major axis diameter to a minor axis diameter of 1.02 to 2.0, and a magnet structure comprising a cup yoke formed with a soft magnetic material and a cylindrical permanent magnet embedded in a circular depressed part provided in a central part of the cup yoke, with the depressed part being sealed by welding with a soft magnetic disk plate through a non-magnetic ring seal to form a plane adsorbing surface having the substantially same shape as the adsorbing surface of the keeper, with a minor axis diameter of the adsorbing surface of the magnet structure of 1.1 to 1.

Abstract: To provide a base material for a prosthesis having abrasion resistance and aesthetic appreciation more than equivalent to those of a conventional artificial tooth and to make a bridge and an artificial tooth for a partial denture easily in a short time without cutting adjacent teeth, the base material is made of a resin material, and comprises only a part having a form approximating to a lingual side surface part of the teeth being at the oral cavity side from a mucous of a dental cervix, two to four teeth may be connected, a thickness of the lingual side surface part is 0.5 mm or more from the lingual side surface and less than 0.5 mm from a labial surface of a teeth form being made finally, a surface contacting with a mucous surface of the dental cervix is formed and an engaging part connecting with a resin material built on a labial side surface is formed.

Abstract: To provide a prosthesis like an artificial tooth capable of forming the bridge directly and having abrasion resistance and aesthetic equivalent to or more than those of a conventional artificial tooth in a short time and without cutting proximal teeth, said prosthesis is made of a resin material and comprises one tooth or teeth connected two to four teeth, which are approximating to the teeth at the oral cavity side from a mucous of a dental cervix part, and recessed parts are formed at proximal surfaces of its both sides, and further, a part where some at the labial surface side is deleted in the thickness almost corresponding to the thickness of an enamel in a natural tooth and a part where some at the occlusal surface side is deleted in the thickness almost corresponding to the thickness of an enamel in a natural tooth, may be formed.

Abstract: A DRAM has, in one embodiment, a plurality of word lines each having its upper and side surfaces covered with a first insulating film, a plurality of bit lines each being provided so as to be insulated from and transverse to the word lines and being covered with a second insulating film, and a plurality of memory cells each provided at an intersection between one word line and one bit line and including a capacitor and a memory cell selection transistor, in which contact holes for connection between semiconductor regions and capacitors and between semiconductor regions and bit lines are formed in self-alignment and the second insulating film is made of a material having a permittivity smaller than that of the first insulating film.

Abstract: To eliminate a defect in conventional dental bleaching agent, that light for activating titanium oxide hardly reaches down to the titanium oxide at the teeth surface to be bleached, a dental bleaching agent set consists of two components of which the first component is attached to teeth surface and irradiation of light is followed after the second component is contacted on the teeth surface, the first component consisting of an organic solvent, containing at least one of a titanium oxide, a nitrogen doped titanium oxide, and a titanium oxinitride having photocatalytic activities, and preferably one or more of a metal oxide, a metal salt, and a metal powder, a thickener and water, the second component consisting of a compound that produces hydrogen peroxide in water, a thickener and a carrier.

Abstract: In semiconductor integrated circuit devices having fine memory cells and a reduced bit line capacity, a side wall insulating film of gate electrodes (word line) is made of silicon nitride and a side wall insulating film of silicon oxide having a dielectric constant smaller than that of the side wall insulating film made of silicon nitride, thereby reducing the capacity for a word line formed over the gate electrode (word line). By setting the level of the upper end of the side wall insulating film made of silicon oxide to be lower than that of the top face of a cap insulating film, the diameter in the upper part of a plug buried in each space (contact holes) between the gate electrodes is set larger than the diameter in the bottom part to assure a contact area between the contact hole and a through hole formed on the contact hole.

Abstract: A crown prosthesis having a wear resistance and an aesthetic property that are equivalent to those of the conventional hard resin, and being able to be fixed inside the oral cavity in a short time to form a dental prosthesis, without necessity of careful formation of an abutment tooth under consideration of the shape and the structure of the dental prosthesis to be produced later. It also offers no necessity of indirect production of the dental prosthesis outside the oral cavity, the crown prosthesis comprising a polymer of a mixture of a polymerizable compound having an unsaturated double bond, a filler and a polymerization initiator, and having an outer shape resembling a tooth and a space to be filled with a dental composite resin between an inner surface thereof and an abutment tooth, preferably having a thickness of 0.1 to 2 mm, and having, in its inside space, a protrusion having a slot or a hole, for engaging or inserting a post implanted on a tooth root of a remaining tooth.

Abstract: A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.

Abstract: A dental glass ionomer cement composition is disclosed, containing a coloring matter, a color of which is specified such that an L* value, when expressed by an L*a*b* colorimetric system in a standard illuminant D65, being 60 or less, and a content of the coloring matter being preferably from 0.1 to 5% by weight based on the whole of the composition, and when the dental glass ionomer cement composition according to the invention is used in a setting method of a dental glass ionomer cement that is a most generally used dental cement at present over a wide range of dental applications by means of irradiation with a light, it has an effect for further shortening the time of sensitization to water and the time of setting.

Abstract: A DRAM has, in one embodiment, a plurality of word lines each having its upper and side surfaces covered with a first insulating film, a plurality of bit lines each being provided so as to be insulated from and transverse to the word lines and being covered with a second insulating film, and a plurality of memory cells each provided at an intersection between one word line and one bit line and including a capacitor and a memory cell selection transistor, in which contact holes for connection between semiconductor regions and capacitors and between semiconductor regions and bit lines are formed in self-alignment and the second insulating film is made of a material having a permittivity smaller than that of the first insulating film.

Abstract: A prosthesis for a tooth surface, which requires neither careful formation of an abutment tooth nor indirect production of the dental prosthesis outside the oral cavity, and can be fixed inside the oral cavity in a time, the prosthesis having a shape resembling a labial side surface of an anterior tooth, a buccal side surface and an approximal surface or an occlusal surface of a molar tooth, or a buccal surface or an approximal surface and an occlusal surface of a molar tooth, a back surface thereof being attached to a lingual side tooth formed by constructing with a lingual side tooth forming resin material on an abutment tooth, and comprising a polymer of a mixture of a polymerizable compound having an unsaturated double bond, a filler and a polymerization initiator. The prosthesis may be a veneering type having a thickness of 0.

Abstract: A method of manufacturing a semiconductor integrated circuit device having a switching MISFET and a capacitor element formed over a semiconductor substrate, such as a DRAM, is disclosed. The dielectric film of the capacitor element is formed to be co-extensive with the capacitor electrode layer over it. The upper electrode of the capacitor element is formed to be larger than the lower electrode.

Abstract: A method for bleaching teeth comprises steps of applying a solution containing nitrogen-deeped titanium oxide powder on a surface of teeth, and irradiating the applied part with light to bleach the teeth based on a photocatalytic action thus produced, and a bleaching agent for teeth suitable for carrying out the method comprises a solution containing nitrogen-deeped titanium oxide powder, in which the nitrogen-deeped titanium oxide is preferably a photocatalytic substance having a Ti—O—N structure having a titanium oxide crystalline lattice containing nitrogen and exhibiting a photocatalytic action in a visible light region, the bleaching agent contains preferably 0.01 to 5% by weight of the nitrogen-deeped titanium oxide powder, the nitrogen-deeped titanium oxide powder has a specific surface area of from 10 to 500 m2/g, the solution contains water and/or an alcohol as a solvent, and the bleaching agent further contains preferably 0.

Abstract: There is provided a resin composition for soft relining material that can meet the performances required in a soft relining material for denture base, such as a proper softness and fitness between a denture base and an oral mucosa, without using a phthalate-based plasticizer widely used in the conventional art resin composition for soft relining material, which is pointed out to have a possibility for influencing living bodies as an endocrine disruptor. The soft resin composition for denture base is constructed of (a) a (meth)acrylate monomer having at least one unsaturated double bond; (b) an aliphatic acid ester-based plasticizer; (c) a (meth)acrylate polymer or copolymer; and (d) a polymerization initiator.

Abstract: In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta2O5 (tantalum oxide) film 46, the portions of bit lines BL and first-layer interconnect lines 23 to 26 of a peripheral circuit which are in contact with at least an underlying silicon oxide film 28 are formed of a W film, the bit lines BL and the interconnect lines 23 to 26 being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines 23 to 26 and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.

Abstract: In semiconductor integrated circuit devices having fine memory cells and a reduced bit line capacity, a side wall insulating film of gate electrodes (word line) is made of silicon nitride and a side wall insulating film of silicon oxide having a dielectric constant smaller than that of the side wall insulating film made of silicon nitride, thereby reducing the capacity for a word line formed over the gate electrode (word line). By setting the level of the upper end of the side wall insulating film made of silicon oxide to be lower than that of the top face of a cap insulating film, the diameter in the upper part of a plug buried in each space (contact holes) between the gate electrodes is set larger than the diameter in the bottom part to assure a contact area between the contact hole and a through hole formed on the contact hole.