Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Abstract: A method of manufacturing a solid-state image sensor comprising a pixel part including a photoelectric conversion element and a MOS transistor, comprising steps of forming a first insulating film made of a nitrogen-containing silicon compound on the photoelectric conversion element and the MOS transistor, forming an opening in at least a portion of the first insulating film, which is positioned above a channel of the MOS transistor, forming a second insulating film on the first insulating film, forming a contact hole extending through the second insulating film and the first insulating film, and forming, in the contact hole, a contact plug to be connected to the MOS transistor.

Abstract: A method of manufacturing a solid-state image sensor having a photoelectric conversion portion includes forming a silicon nitride film by a low-pressure chemical vapor deposition method using hexachlorodisilane (Si2Cl6) as a material gas such that the silicon nitride film covers at least a part of the photoelectric conversion portion.