Patents by Inventor Toshihisa Atsumi

Toshihisa Atsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OCT device
    Patent number: 8884226
    Abstract: A photodetector of an OCT device is provided with: a silicon substrate comprised of a semiconductor of a first conductivity type, having a first principal surface and a second principal surface opposed to each other, and having a semiconductor region of a second conductivity type formed on the first principal surface side; and charge transfer electrodes provided on the first principal surface and transferring generated charges. In the silicon substrate, an accumulation layer of the first conductivity type having a higher impurity concentration than the silicon substrate is formed on the second principal surface side, and an irregular asperity is formed in a region opposed to at least the semiconductor region, in the second principal surface. The region in which the irregular asperity is formed on the second principal surface of the silicon substrate is optically exposed.
    Type: Grant
    Filed: January 19, 2011
    Date of Patent: November 11, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Yasuhito Miyazaki, Yasuhito Yoneta, Hisanori Suzuki, Masaharu Muramatsu, Toshihisa Atsumi
  • OCT DEVICE
    Publication number: 20120287440
    Abstract: A photodetector of an OCT device is provided with: a silicon substrate comprised of a semiconductor of a first conductivity type, having a first principal surface and a second principal surface opposed to each other, and having a semiconductor region of a second conductivity type formed on the first principal surface side; and charge transfer electrodes provided on the first principal surface and transferring generated charges. In the silicon substrate, an accumulation layer of the first conductivity type having a higher impurity concentration than the silicon substrate is formed on the second principal surface side, and an irregular asperity is formed in a region opposed to at least the semiconductor region, in the second principal surface. The region in which the irregular asperity is formed on the second principal surface of the silicon substrate is optically exposed.
    Type: Application
    Filed: January 19, 2011
    Publication date: November 15, 2012
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yasuhito Miyazaki, Yasuhito Yoneta, Hisanori Suzuki, Masaharu Muramatsu, Toshihisa Atsumi