Abstract: An in-vivo monitoring camera system that includes: a camera support tube (13) of which one end part is introduced into a body; a camera unit (11) which joins with the camera support tube in the body; a joining portion which joins the camera unit and the support tube to each other; a camera side cable (12) which is connected to the camera unit, and is drawn out toward the outside of the body through the camera support tube; a control system which is on the outside of the body, is connected to the camera side cable, and includes at least a display apparatus; and a cooling system (77) which cools the camera support tube to which heat of the imaging unit is transferred.

Abstract: An intracorporeal-monitoring camera system provided with a support tube whose one end is introduced in a body, an imaging portion that is joined to the support tube in the body, a joining portion that joins the imaging portion and the support tube together, a cable that is connected with the imaging portion and drawn out to an outside of the body through the support tube, and a control system that is provided on the outside of the body, connected with the cable, and includes at least a display device. A slit is formed in the support tube so that the cable is placed in the support tube from a side of the support tube.

Abstract: The invention is provided with: a camera support tube (13) one end part of which is introduced into a body; a camera unit (11) which is joined to the camera support tube inside the body; a support tube joining portion (14) which joins the camera unit and the camera support tube; a camera-side cable (12) which is connected to the camera unit and led out to an outside of the body through the camera support tube; and a control system that is provided outside the body is connected to the camera-side cable, and includes at least a display (18).

Abstract: A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.

Abstract: A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.

Abstract: A method according to the present invention for producing a semiconductor device includes the step of forming a connecting electrode for allowing connection with an outside electrode. The step includes the sub-steps of (i) forming, in a silicon substrate, a concave section whose inner wall is covered by a conductive layer, (ii) filling the concave section with a filler made of a material different from a material of the conductive layer, and (iii) exposing the conductive layer from a bottom surface of the silicon substrate. As a result, it is possible to speedily produce a semiconductor device favorably applicable to a laminated semiconductor device.

Abstract: Here is disclosed a tape recorder including a mode changing mechanism which comprises, in turn, a cam gear operatively associated with a head base so that the cam gear is rotated in accordance with forward or reverse rotation of an electromotor to achieve a desired mode change among "stop", "recording/reproduction", "fast forwarding" and "rewinding" modes.