Abstract: The invention provides a method for producing a silicon oxide film, whereby a film having uniform optical constants such as refractive index, absorption coefficient, etc. can be formed continuously at a high deposition rate. A method for producing a silicon oxide film, which comprises depositing a silicon oxide film on a substrate by carrying out AC sputtering by using a sputtering target comprising silicon carbide and silicon with a ratio in number of atoms of C to Si being from 0.5 to 0.95, in an atmosphere containing an oxidizing gas, with an alternating current having a frequency of from 1 to 1,000 kHz.

Abstract: A multilayer film-coated substrate having the stress of the film relaxed by depositing a multilayer film comprising a metal oxide film and a silicon oxide film on a substrate at a high speed by a sputtering method using a conductive sputtering material, and a process for producing a multilayer film-coated substrate having such a low stress, are presented. A multilayer film-coated substrate comprising a substrate and at least a metal oxide film and a silicon oxide film laminated thereon repeatedly at least once, wherein at least one layer of said metal oxide film is a metal oxide film deposited by sputtering by using, as the target material, a metal oxide MOX which is deficient in oxygen than the stoichiometric composition, to have the oxygen deficiency resolved, and the stress of the multilayer film is from ?100 MPa to +100 MPa.

Abstract: The invention provides a method for producing a silicon oxide film, whereby a film having uniform optical constants such as refractive index, absorption coefficient, etc. can be formed continuously at a high deposition rate. A method for producing a silicon oxide film, which comprises depositing a silicon oxide film on a substrate by carrying out AC sputtering by using a sputtering target comprising silicon carbide and silicon with a ratio in number of atoms of C to Si being from 0.5 to 0.95, in an atmosphere containing an oxidizing gas, with an alternating current having a frequency of from 1 to 1,000 kHz.

Abstract: A multilayer film-coated substrate having the stress of the film relaxed by depositing a multilayer film comprising a metal oxide film and a silicon oxide film on a substrate at a high speed by a sputtering method using a conductive sputtering material, and a process for producing a multilayer film-coated substrate having such a low stress, are presented. A multilayer film-coated substrate comprising a substrate and at least a metal oxide film and a silicon oxide film laminated thereon repeatedly at least once, wherein at least one layer of said metal oxide film is a metal oxide film deposited by sputtering by using, as the target material, a metal oxide MOX which is deficient in oxygen than the stoichiometric composition, to have the oxygen deficiency resolved, and the stress of the multilayer film is from ?100 MPa to +100 MPa.

Abstract: A cylindrical target having a cylindrical backing tube and hollow cylindrical target material disposed on an outer circumference of the cylindrical backing tube. The backing tube and the target material are joined via an electroconductive felt present beteween the backing tube and the target material.

Abstract: A cylindrical target is obtained by joining a backing tube made of metal as an inner cylinder and a target material as an outer cylinder via a buffer member 52 such as a carbon felt. The cylindrical target broadens the possibility of selecting the target material and the material for a backing tube for supporting this, simplifies manufacturing and enables recycling.

Abstract: A liquid heating apparatus 1 has a flow path 2 surrounded by a quartz glass tube 5 inside a tubular ceramic heater 4 which radiates infrared rays and has a PTC characteristic, and a flow path 3 which is formed between two quartz glass tubes 6, 7 which are disposed outside the tubular ceramics tube 4 in a coaxial manner. The liquid heating apparatus can effectively heat purified water used for manufacturing electronics-related products without contamination of the purified water, and provides a compact size while having a high heat capacity.