Patents by Inventor Toshihisa Ozu
Toshihisa Ozu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030014Abstract: A seasoning method implemented in a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber and an electrostatic chuck, the electrostatic chuck including a central region which supports a substrate and an annular region which surrounds the central region and supports a ring assembly, the seasoning method includes: disposing the ring assembly on the annular region of the electrostatic chuck; disposing the substrate on the central region of the electrostatic chuck; forming a plasma in the chamber; calculating a thermal resistance between the electrostatic chuck and the ring assembly; and determining, based on the calculated thermal resistance, whether to repeat the forming the plasma and the calculating the thermal resistance.Type: ApplicationFiled: July 21, 2023Publication date: January 25, 2024Inventors: Yusuke SHIMIZU, Satoru NAKAMURA, Toshihisa OZU, Naoki MATSUMOTO
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Publication number: 20240030012Abstract: The present disclosure provides a detection method implemented in a plasma processing apparatus. The plasma processing apparatus comprising a plasma processing chamber, a substrate support disposed in the plasma processing chamber and a plurality of heaters disposed in the substrate support, the detection method comprising: disposing a substrate on the substrate support; performing plasma processing by generating plasma in the plasma processing chamber; measuring temperatures of each of the plurality of heaters with a plasma being formed in the plasma processing chamber; and detecting a significant point in the substrate support based on the measured temperatures of the plurality of heaters.Type: ApplicationFiled: July 21, 2023Publication date: January 25, 2024Inventors: Naoki MATSUMOTO, Toshihisa OZU, Satoru NAKAMURA, Yusuke SHIMIZU
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Patent number: 10224220Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.Type: GrantFiled: May 27, 2014Date of Patent: March 5, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Toshihisa Ozu, Naoki Matsumoto, Takashi Tsukamoto, Kazuto Takai
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Patent number: 9728417Abstract: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.Type: GrantFiled: November 9, 2012Date of Patent: August 8, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Masaki Inoue, Toshihisa Ozu, Takehiro Tanikawa, Jun Yoshikawa
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Patent number: 9711371Abstract: An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.Type: GrantFiled: October 29, 2015Date of Patent: July 18, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Akinori Kitamura, Kosuke Kariu, Toshihisa Ozu, Hai Woo Lee
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Patent number: 9337020Abstract: A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., H2 gas.Type: GrantFiled: June 17, 2013Date of Patent: May 10, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Michihisa Takachi, Yusuke Shimizu, Toshihisa Ozu
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Publication number: 20160126071Abstract: An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.Type: ApplicationFiled: October 29, 2015Publication date: May 5, 2016Inventors: Akinori Kitamura, Kosuke Kariu, Toshihisa Ozu, Hai Woo Lee
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Patent number: 9034698Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.Type: GrantFiled: August 21, 2014Date of Patent: May 19, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Toshihisa Ozu, Shota Yoshimura, Hiroto Ohtake, Kosuke Kariu, Takashi Tsukamoto
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Publication number: 20150104957Abstract: A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., H2 gas.Type: ApplicationFiled: June 17, 2013Publication date: April 16, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Michihisa Takachi, Yusuke Shimizu, Toshihisa Ozu
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Publication number: 20150096882Abstract: A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an Ar gas, a He gas and an etching gas toward a central portion of a wafer W; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the He gas to the Ar gas contained in the processing gas is equal to or higher than a preset value.Type: ApplicationFiled: June 14, 2013Publication date: April 9, 2015Inventors: Naoki Matsumoto, Koji Koyama, Toshihisa Ozu, Shota Yoshimura
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Patent number: 8980048Abstract: A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.Type: GrantFiled: April 30, 2014Date of Patent: March 17, 2015Assignee: Tokyo Electron LimitedInventors: Tetsuya Nishizuka, Masahiko Takahashi, Toshihisa Ozu
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Patent number: 8969210Abstract: There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process on a target substrate W; a gas supply unit 13 for supplying a plasma processing gas into the processing chamber 12; a supporting table positioned within the processing chamber 12 and configured to support the target substrate thereon; a microwave generator 15 for generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamber 12 by using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber 12; a bias power supply unit for supplying AC bias power to the supporting table 14; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.Type: GrantFiled: September 14, 2011Date of Patent: March 3, 2015Assignee: Tokyo Electron LimitedInventors: Toshihisa Nozawa, Masaru Sasaki, Jun Hashimoto, Shota Yoshimura, Toshihisa Ozu, Tetsuya Nishizuka
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Publication number: 20150056773Abstract: A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.Type: ApplicationFiled: August 21, 2014Publication date: February 26, 2015Inventors: Toshihisa Ozu, Shota Yoshimura, Hiroto Ohtake, Kosuke Kariu, Takashi Tsukamoto
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Publication number: 20150017811Abstract: An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.Type: ApplicationFiled: November 9, 2012Publication date: January 15, 2015Inventors: Masaki Inoue, Toshihisa Ozu, Takehiro Tanikawa, Jun Yoshikawa
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Publication number: 20140262025Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.Type: ApplicationFiled: May 27, 2014Publication date: September 18, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihisa OZU, Naoki MATSUMOTO, Takashi TSUKAMOTO, Kazuto TAKAI
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Patent number: 8835320Abstract: An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.Type: GrantFiled: April 19, 2011Date of Patent: September 16, 2014Assignee: Tokyo Electron LimitedInventor: Toshihisa Ozu
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Publication number: 20140231017Abstract: A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.Type: ApplicationFiled: April 30, 2014Publication date: August 21, 2014Applicant: Tokyo Electron LimitedInventors: Tetsuya Nishizuka, Masahiko Takahashi, Toshihisa Ozu
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Patent number: 8771537Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.Type: GrantFiled: August 10, 2010Date of Patent: July 8, 2014Assignee: Tokyo Electron LimitedInventors: Toshihisa Ozu, Naoki Matsumoto, Takashi Tsukamoto, Kazuto Takai
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Patent number: 8753527Abstract: A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.Type: GrantFiled: November 11, 2009Date of Patent: June 17, 2014Assignee: Tokyo Electron LimitedInventors: Tetsuya Nishizuka, Masahiko Takahashi, Toshihisa Ozu
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Publication number: 20130102157Abstract: An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.Type: ApplicationFiled: April 19, 2011Publication date: April 25, 2013Applicant: TOKYO ELECTRON LIMITEDInventor: Toshihisa Ozu