Abstract: A folding hanger includes of a pair of arms and a hook. Above-mentioned pair of arms and the hook have a common axis of rotation and each arm of the arms is structured by two parallel boards and an intermediate board connecting the two parallel boards. An angle between the center line of the arm and an edge line, which passes through the common axis of rotation and an edge of the intermediate board, is set between 50 degrees and 80 degrees.

Abstract: A folding hanger includes of a pair of arms and a hook. Above-mentioned pair of arms and the hook have a common axis of rotation and each arm of the arms is structured by two parallel boards and an intermediate board connecting the two parallel boards. An angle between the center line of the arm and an edge line, which passes through the common axis of rotation and an edge of the intermediate board, is set between 50 degrees and 80 degrees.

Abstract: A magnetic disk unit of form factor size with a low power consumption, a short average seek time and a high performance. The unit includes at least two spindles for supporting and rotating magnetic disks. Specifically, two 1.3-inch disks, three 1.0-inch disks or four 0.7-inch disks are arranged in a housing originally intended for a 1.8-inch magnetic disk. The unit further includes a device for writing and reading information while selecting a spindle. The card-type disk unit thus can be reduced in thickness, with a smaller power consumption for starting the disk rotation and further with an improved average seek velocity.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.

Abstract: An electronic interpreter for interpreting sentences between a first person and a second person. The electronic interpreter includes a memory for storing sentence data in a data structure having a plurality of sets of sentences including translations of the sentences, wherein each sentence of each set of sentences is linked to another of the sets of sentences, and a data processing unit.

Abstract: An optical switch has an input optical waveguide and an output optical waveguide that are physically and optically separated from each other by a two-level crossing arrangement. The direction of optical signal propagation is switchable by a connecting optical waveguide to provide optical coupling between the input and output optical waveguides. Crosstalk and loss due to diffraction at each crossing are small, and insertion loss does not increase, even for a large-scale application.

Abstract: In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.

Abstract: This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

Abstract: The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines.

Abstract: Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern.

Abstract: This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

Abstract: A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.

Abstract: A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

Abstract: This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carriers be easily generated and to thereby improve writing efficiency.

Abstract: A thin-film transistor using hydrogenated amorphous silicon (a-Si:H), and particularly a thin-film device such as a thin-film transistor having high conductivity, large drivability and high process margin, and a display panel using the same transistors. The object of the invention is to reduce defects due to shorts between the gate and the source or between the gate and the drain, to prevent signal line defect even in case defects develop due to shorts, and to expand the design margin and process margin in the array. A capacity is connected to the gate electrode of the channel side and a voltage is applied to the gate electrode via the capacity.

Abstract: A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.

Abstract: A photosensor with improved performance is provided with a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity. The gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a semiconductor area with photosensitivity adjacent thereto. As a photosensitive semiconductor, amorphous silicon can be used because of its comparatively easy manufacturing method and its high sensitivity. As a field effect transistor, a thin film transistor of amorphous silicon can be used to correspond to the demand for making transistors over a large area. A MOSFET is preferably used as a field effect transistor for the improvement of sensitivity and speed of the sensor.

Abstract: This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carriers be easily generated and to thereby improve writing efficiency.

Abstract: In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.