Patents by Inventor Toshihito Suzuki
Toshihito Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230387663Abstract: An optical semiconductor device includes: a base including a surface intersecting with a first direction; a mesa protruding from the surface in the first direction, including a top surface and two side surfaces, and extending along the surface in a direction intersecting the first direction; and a heater layer including a top wall positioned on a side opposite to the base with respect to the top surface, the heater layer extending along the mesa, the mesa including a first mesa extending in a second direction intersecting the first direction, and a plurality of second mesas branching from the first mesa and extending so as to be away from each other in a third direction toward the second direction from the first mesa, the third direction intersecting both of the first direction and the second direction.Type: ApplicationFiled: August 8, 2023Publication date: November 30, 2023Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Kenichiro YAO, Masaki WAKABA, Toshihito SUZUKI
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Publication number: 20220360041Abstract: An optical semiconductor device includes: a base including a base surface; a mesa protruding from the base surface in a first direction intersecting the base surface and extending along the base surface; an optical waveguide layer provided inside the mesa or provided inside the base so as to have a region at least overlapping with the mesa in the first direction; an electric resistance layer including a first region provided on the mesa, and a first extending portion extending from the first region in a direction intersecting an extending direction of the mesa; and a wiring layer including a second region electrically connected to the electric resistance layer and configured to partially cover the first region, and a second extending portion configured to at least partially cover the first extending portion and extending from the second region in a direction intersecting the extending direction of the mesa.Type: ApplicationFiled: July 22, 2022Publication date: November 10, 2022Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Masahiro YOSHIDA, Toshihito SUZUKI
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Publication number: 20210376558Abstract: A semiconductor optical integrated device in which a forward-bias optical device and a semiconductor laser are monolithically integrated on a semiconductor substrate, includes: a passive waveguide portion that is arranged between the forward-bias optical device and the semiconductor laser; and a ground electrode that is arrange on a lower surface of the semiconductor substrate. Further, the semiconductor laser includes a mirror having a length on a side closer to the forward-bias optical device, the forward-bias optical device includes a forward-bias optical-device electrode on a side opposite to a side in contact with the semiconductor substrate, the passive waveguide portion includes a passive waveguide electrode on a side opposite to a side in contact with the semiconductor substrate, and the passive waveguide electrode is electrically connected to the ground electrode.Type: ApplicationFiled: August 12, 2021Publication date: December 2, 2021Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Masayoshi NISHITA, Hiroyuki ISHII, Toshihito SUZUKI
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Patent number: 10811840Abstract: A laser module that can suppress influence due to a reflected light between chips is provided. A laser module 100 according to one embodiment of the present invention includes: a laser element 110 provided on a first substrate and having a laser oscillation unit that generates a laser light and a first optical waveguide that guides the laser light; and an optical amplifier 120 provided on a second substrate and having a second waveguide that guides the laser light. The first optical waveguide is nonparallel relative to an end face of the first substrate and connected thereto, the second optical waveguide is nonparallel relative to an end face of the second substrate and connected thereto, and the first substrate and the second substrate are arranged such that the laser light output from the first optical waveguide is optically coupled to the second optical waveguide.Type: GrantFiled: August 3, 2018Date of Patent: October 20, 2020Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Maiko Ariga, Yusuke Inaba, Kazuaki Kiyota, Toshihito Suzuki
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Patent number: 10770863Abstract: A disclosed semiconductor laser device includes a distributed feedback portion serving as a light-emittable active region the distributed feedback portion having a diffraction grating; and a distributed reflective portion serving as a passive reflective mirror, the distributed reflective portion having a diffraction grating, wherein the distributed feedback portion includes a first region adjacent to the distributed reflective portion and having a diffraction grating having a predetermined standard period, a phase shift region adjacent to the first region, the phase shift region being longer by twice or more than the standard period, and a second region adjacent to an opposite side to the first region of the phase shift region and having a diffraction grating with the standard period, and the phase shift region optically changes a phase of laser beam between the first region and the second region.Type: GrantFiled: January 30, 2019Date of Patent: September 8, 2020Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Toshihito Suzuki, Kazuaki Kiyota, Go Kobayashi
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Patent number: 10554013Abstract: A semiconductor laser apparatus includes a semiconductor optical integrated device including a semiconductor laser array including a plurality of semiconductor laser elements, a semiconductor arrayed waveguide grating, made of a semiconductor, including an inputting slab waveguide connected to the plurality of the semiconductor laser elements, an array waveguide connected to the inputting slab waveguide and including a plurality of waveguides having different lengths from each other and arranged in a parallel manner, and an outputting slab waveguide connected to the array waveguide; a substrate on which the semiconductor laser array and the semiconductor arrayed waveguide grating are monolithically integrated; and an output facet outputting a laser light emitted from the semiconductor laser elements and including an output end of the outputting slab waveguide.Type: GrantFiled: January 31, 2017Date of Patent: February 4, 2020Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Tatsuro Kurobe, Toshihito Suzuki, Kazuaki Kiyota
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Patent number: 10320150Abstract: An optical semiconductor apparatus includes: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point. The arrayed waveguide grating is configured to combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating.Type: GrantFiled: January 31, 2017Date of Patent: June 11, 2019Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Toshihito Suzuki, Kazuaki Kiyota, Tatsuro Kurobe
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Publication number: 20190165544Abstract: A disclosed semiconductor laser device includes a distributed feedback portion serving as a light-emittable active region the distributed feedback portion having a diffraction grating; and a distributed reflective portion serving as a passive reflective mirror, the distributed reflective portion having a diffraction grating, wherein the distributed feedback portion includes a first region adjacent to the distributed reflective portion and having a diffraction grating having a predetermined standard period, a phase shift region adjacent to the first region, the phase shift region being longer by twice or more than the standard period, and a second region adjacent to an opposite side to the first region of the phase shift region and having a diffraction grating with the standard period, and the phase shift region optically changes a phase of laser beam between the first region and the second region.Type: ApplicationFiled: January 30, 2019Publication date: May 30, 2019Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Toshihito SUZUKI, Kazuaki Kiyota, Go Kobayashi
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Publication number: 20180342850Abstract: A laser module that can suppress influence due to a reflected light between chips is provided. A laser module 100 according to one embodiment of the present invention includes: a laser element 110 provided on a first substrate and having a laser oscillation unit that generates a laser light and a first optical waveguide that guides the laser light; and an optical amplifier 120 provided on a second substrate and having a second waveguide that guides the laser light. The first optical waveguide is nonparallel relative to an end face of the first substrate and connected thereto, the second optical waveguide is nonparallel relative to an end face of the second substrate and connected thereto, and the first substrate and the second substrate are arranged such that the laser light output from the first optical waveguide is optically coupled to the second optical waveguide.Type: ApplicationFiled: August 3, 2018Publication date: November 29, 2018Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Maiko ARIGA, Yusuke INABA, Kazuaki KIYOTA, Toshihito SUZUKI
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Publication number: 20170141532Abstract: A semiconductor laser apparatus includes a semiconductor optical integrated device including a semiconductor laser array including a plurality of semiconductor laser elements, a semiconductor arrayed waveguide grating, made of a semiconductor, including an inputting slab waveguide connected to the plurality of the semiconductor laser elements, an array waveguide connected to the inputting slab waveguide and including a plurality of waveguides having different lengths from each other and arranged in a parallel manner, and an outputting slab waveguide connected to the array waveguide; a substrate on which the semiconductor laser array and the semiconductor arrayed waveguide grating are monolithically integrated; and an output facet outputting a laser light emitted from the semiconductor laserelements and including an output end of the outputting slab waveguide.Type: ApplicationFiled: January 31, 2017Publication date: May 18, 2017Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Tatsuro KUROBE, Toshihito SUZUKI, Kazuaki KIYOTA
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Publication number: 20170141540Abstract: An optical semiconductor apparatus includes: semiconductor laser devices having different emission wavelengths and grouped into at least a first group and a second group; and an arrayed waveguide grating connected to the semiconductor laser devices of the first and second groups and configured to combine laser light beams radiating from the semiconductor laser devices into a same point. The arrayed waveguide grating is configured to combine laser light beams from the semiconductor laser devices belonging to the first group into the same point by diffraction in a first diffraction order in the arrayed waveguide grating, and combine laser light beams from the semiconductor laser devices belonging to the second group into the same point by diffraction in a second diffraction order different from the first diffraction order, in the arrayed waveguide grating.Type: ApplicationFiled: January 31, 2017Publication date: May 18, 2017Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Toshihito SUZUKI, Kazuaki KIYOTA, Tatsuro KUROBE
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Patent number: 9300114Abstract: Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.Type: GrantFiled: March 30, 2012Date of Patent: March 29, 2016Assignee: FURUKAWA ELECTRIC CO., LTD.Inventors: Hitoshi Shimizu, Toshihito Suzuki, Yasumasa Kawakita, Keishi Takaki
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Patent number: 8861562Abstract: Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.Type: GrantFiled: June 22, 2012Date of Patent: October 14, 2014Assignee: Furukawa Electric Co., Ltd.Inventors: Toshihito Suzuki, Keishi Takaki, Suguru Imai, Yasumasa Kawakita
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Publication number: 20130010822Abstract: Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.Type: ApplicationFiled: June 22, 2012Publication date: January 10, 2013Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Toshihito SUZUKI, Keishi TAKAKI, Suguru IMAI, Yasumasa KAWAKITA
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Publication number: 20120251039Abstract: Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.Type: ApplicationFiled: March 30, 2012Publication date: October 4, 2012Applicant: FURUKAWA ELECTRIC CO., LTD.Inventors: Hitoshi SHIMIZU, Toshihito SUZUKI, Yasumasa KAWAKITA, Keishi TAKAKI
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Patent number: 5957545Abstract: A master cylinder reservoir for use in an automotive vehicle includes a main body, a reserving chamber formed in the main body for storing operating fluid, a pouring opening provided at one end of the upper portion of the main body to permit introduction of the operating fluid into the reserving chamber, and a blocking device provided in the main body for preventing a leakage of the operating fluid outside the main body via the pouring opening.Type: GrantFiled: September 2, 1997Date of Patent: September 28, 1999Assignee: Aisin Seiki Kabushiki KaishaInventors: Masashi Sawada, Mitsuharu Hayashi, Takashi Nagashima, Toshihito Suzuki, Ken Sakakibara