Abstract: A solid state image pickup device includes light-receiving circuitry having a plurality of light-receiving cells arranged in a matrix. Apparatus is provided for reading and storing electrical signals output by the light-receiving circuitry, and includes (1) a first memory for reading bright signals out of the light-receiving cells arranged in a row for storing the bright signals for a horizontal scanning period, (2) a second memory for reading dark signals out of the light-receiving cells arranged in the row for storing the dark signal for the horizontal scanning period, and (3) a readout circuit for reading the bright and dark signals stored in the first and second memories simultaneously. A removing circuit is provided for removing fixed pattern noise by simultaneously processing the bright and dark current signals read out from the first and second memories. Preferably, this removing circuit comprises a differential amplifier.

Abstract: A solid state imag pickup device included light-receiving circuitry having a plurality of light-receiving cells arranged in a matrix. Apparatus is provided for reading and storing electrical signals output by the light-receiving circuitry, and includes (1) a first memory for reading bright signals out of the light-receiving cells arranged in a row for storing the bright signals for a horizontal scanning period, (2) a second memory for reading dark signals out of the light-receiving cells arranged in the row for storing the dark signal for the horizontal scanning period, and (3) a readout circuit for reading the bright and dark signals stored in the first and second memories simultaneously. A removing circuit is provided for removing fixed pattern noise by simultaneously processing the bright and dark current signals read out from the first and second memories. Preferably, this removing circuit comprises a differential amplifier.

Abstract: A solid state image pickup device includes light-receiving circuitry having a plurality of light-receiving cells arranged in a matrix. Apparatus is provided for reading and storing electrical signals output by the light-receiving circuitry, and includes (1) a first memory for reading bright signals out of the light-receiving cells arranged in a row for storing the bright signals for a horizontal scanning period, (2) a second memory for reading dark signals out of the light-receiving cells arranged in the row for storing the dark signal for the horizontal scanning period, and (3) a readout circuit for reading the bright and dark signals stored in the first and second memories simultaneously. A removing circuit is provided for removing fixed pattern noise by simultaneously processing the bright and dark current signals read out from the first and second memories. Preferably, this removing circuit comprises a differential amplifier.

Abstract: A solid state image pickup device includes light-receiving circuitry having a plurality of light-receiving cells arranged in a matrix. Apparatus is provided for reading and storing electrical signals output by the light-receiving circuitry, and includes (1) a first memory for reading bright signals out of the light-receiving cells arranged in a row for storing the bright signals for a horizontal scanning period, (2) a second memory for reading dark signals out of the light-receiving cells arranged in the row for storing the dark signal for the horizontal scanning period, and (3) a readout circuit for reading the bright and dark signals stored in the first and second memories simultaneously. A removing circuit is provided for removing fixed pattern noise by simultaneously processing the bright and dark current signals read out from the first and second memories. Preferably, this removing circuit comprises a differential amplifier.

Abstract: A solid state image pickup apparatus for removing noise includes a plurality of photoelectric transducer cells, and first and second switch circuitry. Signal readout lines are provided for reading out signals from the plurality of transducer cells. A plurality of first capacitors, each connected to one of the signal readout lines through the first switch circuitry, are provided for selectively storing first signals read out through the signal lines and the first switch circuitry after a predetermined accumulation period. A plurality of second capacitors, each connected to one of the signal read out lines through the second switch circuitry, are provided for selectively storing second signals corresponding to dark current signals read out through the signal read out lines and the second switch circuitry.

Abstract: Solid state image pickup apparatus for removing noise includes a plurality of photoelectric transducer elements for converting incident light into electrical signals, each of the transducer elements having a signal fluctuation. Control circuitry is provided having a first mode for reading out from each transducer element a first signal corresponding to a signal component and a noise component caused by the fluctuation. The control circuitry has a second mode for reading out from each transducer element a second signal corresponding to the noise component caused by the fluctuation, the first and second signals being read out in the same manner from each transducer element. Amplification circuitry is provided for amplifying the first and second signals, the amplification circuitry including a plurality of amplifiers each amplifier being coupled to a respective one of the plurality of transducer elements.

Abstract: A solid state image pickup device includes light-receiving circuitry having a plurality of light-receiving cells arranged in a matrix. Apparatus is provided for reading and storing electrical signals output by the light-receiving circuitry, and includes (1) a first memory for reading bright signals out of the light-receiving cells arranged in a row for storing the bright signals for a horizontal scanning period, (2) a second memory for reading dark signals out of the light-receiving cells arranged in the row for storing the dark signal for the horizontal scanning period, and (3) a readout circuit for reading the bright and dark signals stored in the first and second memories simultaneously. A removing circuit is provided for removing fixed pattern noise by simultaneously processing the bright and dark current signals read out from the first and second memories. Preferably, this removing circuit comprises a differential amplifier.

Abstract: A photoelectric conversion device has a plurality of photoelectric conversion cells, each cell having a semiconductor transistor comprising two main electrode regions made of one conductive type semi-conductor and a control electrode region made of another conductive type semiconductor and a capacitor for controlling the control electrode region at a floating state, the potential at the control electrode region at a floating state being controlled by means of the capacitor so that carriers generated by light are stored in the control electrode region and the output of each cell is controlled in accordance with the storage voltage generated by the storage.

Abstract: A charged particle accelerator capable of accelerating arbitrarily charged particles to an arbitrary energy level and resonating at a low frequency suitable for accelerating heavy ions, including quadruple electrodes which are supplied with high frequency power and disposed in the direction of the center axis of a cylinder-shaped container and a resonant circuit having a capacitor and an inductor for supplying a voltage to the quadruple electrodes. The capacitor is composed of a plurality of metallic plates provided along the center axis at specified intervals in the vicinity of the quadruple electrodes, and a plurality of conductive supports supporting the metallic plates which are directly connected to the container together with the supports and the container form the inductor.

Abstract: In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing memory for storing optical information read out from the photoelectric transducer element; and dark voltage storing memory for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing memory and information corresponding to the dark voltage component stored in the dark voltage storing memory are simultaneously

Abstract: A photoelectric conversion apparatus has a plurality of photoelectric conversion cells. Each cell includes a semiconductor transistor having a control electrode area which in turn includes a plurality of main electrode areas for reading signals. The potential of the control electrode area is controlled to store carriers produced by optical pumping in the control electrode area, to read, from the main electrode area, a signal controlled by the storage voltage produced due to the storage, and to perform a refreshing operation to nullify the carriers stored in the control electrode area. A device is provided for performing a peak detection on the basis of signals from the main electrode area. At least one of the photoelectric conversion cells is shielded from light.

Abstract: A photoelectric transducer device controls a potential of a control electrode region of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region, a read operation for reading a signal from a main electrode region of the semiconductor transistor, the signal being controlled by a storage voltage generated by storage of the carriers, and a refresh operation for electrically neutralizing the carriers stored in the control electrode region. A semiconductor reigon having the same conductivity type as that of the main electrode region and having an impurity concentration lower than that of the main electrode region is formed in the control electrode region independently of the main electrode region. A photoelectric transducer device including a semiconductor region. Two main electrodes and a control electrode are formed between the main electrodes.

Abstract: A photoelectric converting device having a plurality of line sensors, each line sensor having an output line and scanning means for scanning that line sensor. Selection circuit selectably directs a signal from one of the plural output lines to a common output terminal. A reset device resets the common output line to a predetermined level in response to the scanning of the line after the signal has been directed to the common output terminal. The readout may be conducted by scanning the plurality of line sensors by alternatively scanning photoelectric conversion cells from different line sensors.

Abstract: An image sensor device provided with a linear array of photoelectric converting elements each having a capacitor on a control electrode area of a semiconductor transistor is disclosed. The image sensor device is provided with means for sequentially selecting the photoelectric converting elements, and the potential of the control electrode area of the selected photoelectric converting element is controlled through said capacitor, thereby accumulating the carriers generated by photoexcitation in said control electrode area and reading a voltage generated according to the amount of carrier accumulation or dissipating thus accumulated carriers.

Abstract: A photoelectric conversion device having electric conversion cells capable of performing a store operation, a read operation and a refresh operation. In the store operation, a potential of a control electrode region of a semiconductor transistor is controlled using a capacitor and carriers are stored, which carriers have been generated by light excitation at the control electrode region. In the read operation, a signal under control of a voltage generated by the stored carriers is read out of a main electrode area of the semiconductor transistor. In the refresh operation, carriers stored in the control electrode region are removed. A semiconductor region of the same conductivity type as the main electrode region, is formed in the control electrode region separately from the main electrode region.

Abstract: An image sensor device provided with a linear array of photoelectric converting elements each having a capacitor on a control electrode area of a semiconductor transistor is disclosed. The image sensor device is provided with means for sequentially selecting the photoelectric converting elements, and the potential of the control electrode area of the selected photoelectric converting element is controlled through said capacitor, thereby accumulating the carriers generated by photoexcitation in said control electrode area and reading a voltage generated according to the amount of carrier accumulation or dissipating thus accumulated carriers.