Patents by Inventor Toshikatsu KUNII

Toshikatsu KUNII has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200373433
    Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device is configured to include a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and a semiconductor layer. The semiconductor layer is positioned over the first insulating layer. The first conductive layer is positioned over the semiconductor layer. The second insulating layer covers a side surface and a bottom surface of the first conductive layer. The third insulating layer is in contact with a top surface of the first insulating layer and part of a top surface of the semiconductor layer and covers a side surface of the second insulating layer. The semiconductor layer contains a metal oxide, the first insulating layer and the second insulating layer each contain an oxide, and the third insulating layer contains a metal nitride.
    Type: Application
    Filed: October 12, 2018
    Publication date: November 26, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Toshimitsu OBONAI, Yasuharu HOSAKA, Mitsuo MASHIYAMA, Toshikatsu KUNII, Hironobu TAKAHASHI, Kenichi OKAZAKI