Patents by Inventor Toshikatsu Miki

Toshikatsu Miki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Aluminum nitride sintered compact
    Patent number: 7319080
    Abstract: An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 ?m, and having a pore area ratio of not larger than 1×10?7, a pore density of not larger than 0.05 pores/mm2 of pores having diameters of not smaller than 1 ?m, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: January 15, 2008
    Assignee: Tokuyama Corporation
    Inventors: Yukihiro Kanechika, Toshikatsu Miki, Ayako Kai
  • Aluminum nitride sintered compact
    Publication number: 20060154827
    Abstract: An aluminum nitride sintered body comprising crystal grains of an average grain size (D50) of 0.1 to 2.5 ?m, and having a pore area ratio of not larger than 1×10?7, a pore density of not larger than 0.05 pores/mm2 of pores having diameters of not smaller than 1 ?m, and a Vickers' hardness in a range of 14 to 17 GPa. The aluminum nitride sintered body has a very small pore density despite of its relatively small crystal grain size, features excellent strength and mirror machinability, and is particularly useful as a material for circuit substrates on which fine wiring patterns are formed.
    Type: Application
    Filed: September 17, 2003
    Publication date: July 13, 2006
    Inventors: Yukihiro Kanechika, Toshikatsu Miki, Ayako Kai