Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

Abstract: An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

Abstract: An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

Abstract: A disclosed method of processing a substrate includes (a) providing a substrate in a chamber of a plasma processing apparatus. The substrate has a patterned organic mask. The method further includes (b) generating plasma from a processing gas in the chamber in a state where the substrate is accommodated in the chamber. The method further includes (c) periodically applying a pulsed negative direct-current voltage to an upper electrode of the plasma processing apparatus, during execution of the generating plasma (that is, the above (b)). In the applying a pulsed negative direct-current voltage, ions from the plasma are supplied to the upper electrode, so that a silicon-containing material which is released from the upper electrode is deposited on the substrate.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

Abstract: A disclosed method of processing a substrate includes (a) providing a substrate in a chamber of a plasma processing apparatus. The substrate has a patterned organic mask. The method further includes (b) generating plasma from a processing gas in the chamber in a state where the substrate is accommodated in the chamber. The method further includes (c) periodically applying a pulsed negative direct-current voltage to an upper electrode of the plasma processing apparatus, during execution of the generating plasma (that is, the above (b)). In the applying a pulsed negative direct-current voltage, ions from the plasma are supplied to the upper electrode, so that a silicon-containing material which is released from the upper electrode is deposited on the substrate.

Abstract: A plasma processing method according to an exemplary embodiment includes generating plasma from a film formation gas in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source. The plasma processing method further includes forming a protective film on an inner wall surface of a side wall of the chamber by depositing a chemical species from the plasma on the inner wall surface. In the forming a protective film, a pulsed negative direct-current voltage is periodically applied from a direct-current power source device to an upper electrode of the plasma processing apparatus.

Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.

Abstract: An apparatus for plasma processing is configured to generate plasma in a chamber and periodically apply a pulsed negative DC voltage to an upper electrode from a DC power supply in the plasma processing on a substrate and in plasma cleaning. A duty ratio of the pulsed negative DC voltage used for the plasma processing is smaller than a duty ratio of the pulsed negative DC voltage used for the plasma cleaning. An absolute value of an average value of an output voltage of the DC power supply used for the plasma processing is smaller than an absolute value of an average value of the output voltage of the DC power supply used for the plasma cleaning.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.

Abstract: A structure for a substrate processing apparatus to be situated opposite a support pedestal for supporting a substrate includes an electrode plate having a surface exposed to an inner space of a chamber, the surface of the electrode plate having a first roughness, and an annular member disposed around the electrode plate and having a surface exposed to the inner space, the surface of the annular member having a second roughness, wherein the first roughness is different from the second roughness.

Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.

Abstract: In a method for applying a DC voltage to an electrode of a plasma processing apparatus, plasma of a gas is generated in an inner space of a chamber and an absolute value of a negative DC voltage applied from a DC power supply to the electrode that forms a part of the chamber or is provided in the inner space during the generation of the plasma is increased. A first voltage value is specified, the first voltage value being a voltage value measured at the electrode when a current starts to flow in the electrode during the increase of the absolute value of the negative DC voltage. A value of the DC voltage applied from the DC power supply to the electrode during the generation of the plasma is set to a second voltage value that is a sum of the first voltage value and a specified value.

Abstract: A dechuck control method includes performing a discharge process by introducing an inert gas into a processing chamber and maintaining the pressure within the processing chamber at a first pressure; monitoring the pressure of a heat transmitting gas supplied to the processing object rear face and/or the leakage flow rate of the heat transmitting gas; obtaining the amount and polarity of the residual electric charge of the electrostatic chuck surface and applying a voltage for supplying an electric charge that is of the same amount as the residual electric charge but of the opposite polarity to a chuck electrode; evacuating the inert gas from the processing chamber while applying the voltage to the chuck electrode and reducing the pressure within the processing chamber to a second pressure; and turning off the voltage applied to the electrostatic chuck and dechucking the processing object from the electrostatic chuck.

Abstract: This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

Abstract: This method for processing a target object includes steps ST1 to ST4. The target object has an organic polymer layer and a resist mask on a substrate. In step ST1, the target object is electrostatically attached to an electrostatic chuck in a plasma processing apparatus. In step ST2, the organic polymer layer is etched through the resist mask by means of a plasma of a first gas. In step ST3, the target object is detached from the electrostatic chuck while a plasma of a second gas is generated. In step 4, the resist mask is peeled off. The second gas is either oxygen gas or a mixture of oxygen gas and a rare gas having an atomic weight lower than that of argon gas.

Abstract: Provided is a method of etching an etching target layer of a workpiece. The method includes forming a self-assemblable block copolymer layer containing a first polymer and a second polymer on an intermediate layer formed on the etching target layer; processing the workpiece to form a first region containing the first polymer and a second region containing the second polymer, from the block copolymer layer; after the processing the workpiece, forming a mask by etching the second region and the intermediate layer just below the second region; after the forming the mask, forming a protective film on the mask by generating plasma of a processing gas containing silicon tetrachloride gas and oxygen gas within a processing container of a plasma processing apparatus that accommodates the workpiece; and after the forming the protective film, etching the etching target layer.