Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: A sputtering apparatus includes a chamber, a substrate holder, first to fourth target holders, a shutter unit, and a gate valve through which the substrate is conveyed. The first to fourth target holders are arranged on vertices of a virtual rectangle having long sides and short sides and inscribed in a virtual circle centered on the axis, the first target holder and the second target holder are respectively arranged on two vertices defining one short side of the virtual rectangle, and a distance to the gate valve is shorter than distances from the third target holder and the fourth target holder to the gate valve.

Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: The present invention provides a vacuum processing apparatus capable of reducing attachment of particles generated in a processing space to an inner wall of a chamber, and of easily adjusting pressure in the processing space while introducing a gas into the processing space at a desired flow rate. A vacuum processing apparatus according to one embodiment includes: a container; a gas exhaust portion; a substrate holder configured to retain a substrate; a shield provided to surround the substrate holder and dividing an inside of the container into a processing space and an outside space; a gas introducing portion; a plasma generating portion; and an exhaust portion provided to the shield having a communication path through which the processing space and the outside space communicate, wherein at least part of the communication path is hidden from a region where the plasma generating portion generates the plasma.

Abstract: The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring; balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp.

Abstract: The present invention provides an in-line type multi-chamber substrate processing apparatus which, with a simple configuration, can decrease influence of particles due to film peeling and enables installation of a number of processing chambers. In one embodiment of the present invention, a jointless arm of a transfer robot that has a substrate holding part 4a and performs rotational movement while maintaining a predetermined length of the arm is disposed inside a first process chamber capable of being evacuated. The first process chamber is configured to be able to transfer substrates from an adjacent second process chamber through an opening by the arm of the transfer robot. A holder as an arm retreating position and a substrate mounting position is positioned so as to overlap with a trajectory of the substrate holding part when the arm of the transfer robot rotates about a rotation axis.

Abstract: The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield.

Abstract: A sputtering apparatus includes a chamber, a substrate holder, first to fourth target holders, a shutter unit, and a gate valve through which the substrate is conveyed. The first to fourth target holders are arranged on vertices of a virtual rectangle having long sides and short sides and inscribed in a virtual circle centered on the axis, the first target holder and the second target holder are respectively arranged on two vertices defining one short side of the virtual rectangle, and a distance to the gate valve is shorter than distances from the third target holder and the fourth target holder to the gate valve.

Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.

Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.

Abstract: Provided is a substrate processing apparatus including an openable and closable lid and being capable of precisely controlling a gap between multiple shields. The substrate processing apparatus includes: an openable and closable lid provided on an opening of a chamber; a first shield provided on a surface of the lid at the chamber side and having an insertion hole; an insertion section fixed to the lid while inserted through the insertion hole, and configured to support the first shield in a manner movable within a predetermined distance; a restriction section provided on an end portion of the insertion section and configured to restrict the movement of the first shield; and biasing means configured to bias the first shield to a member provided inside the chamber when the lid is closed.

Abstract: The present invention provides a vacuum processing apparatus capable of reducing attachment of particles generated in a processing space to an inner wall of a chamber, and of easily adjusting pressure in the processing space while introducing a gas into the processing space at a desired flow rate. A vacuum processing apparatus according to one embodiment includes: a container; a gas exhaust portion; a substrate holder configured to retain a substrate; a shield provided to surround the substrate holder and dividing an inside of the container into a processing space and an outside space; a gas introducing portion; a plasma generating portion; and an exhaust portion provided to the shield having a communication path through which the processing space and the outside space communicate, wherein at least part of the communication path is hidden from a region where the plasma generating portion generates the plasma.

Abstract: The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp.

Abstract: The present invention provides an in-line type multi-chamber substrate processing apparatus which, with a simple configuration, can decrease influence of particles due to film peeling and enables installation of a number of processing chambers. In one embodiment of the present invention, a jointless arm of a transfer robot that has a substrate holding part 4a and performs rotational movement while maintaining a predetermined length of the arm is disposed inside a first process chamber capable of being evacuated. The first process chamber is configured to be able to transfer substrates from an adjacent second process chamber through an opening by the arm of the transfer robot. A holder as an arm retreating position and a substrate mounting position is positioned so as to overlap with a trajectory of the substrate holding part when the arm of the transfer robot rotates about a rotation axis.

Abstract: The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield.

Abstract: A stacked load lock chamber comprises a first load lock chamber, a second load lock chamber stacked on the first load lock chamber, a first slit-valve mover configured to open and close a first opening provided to an atmosphere side of the first load lock chamber, a second slit-valve mover configured to open and close a second opening provided to an atmosphere side of the second load lock chamber, a first arm connected to the first slit-valve mover, a second arm connected to the second slit-valve mover, and a driver located below the first and second load lock chambers and configured to drive the first and second arms to move the first and second slit-valve movers through the first and second arms.