Abstract: A polishing-pad laminated structure which allows for easy alignment of a through-hole of a polishing pad with a sensor head installed in a polishing table is disclosed. The polishing-pad laminated structure includes a polishing pad and a release sheet. The polishing pad has a through-hole located at a position corresponding to a position of a sensor head disposed in the polishing table. The release sheet covers an adhesive surface of the polishing pad. The release sheet is divided into at least a first release sheet and a second release sheet. The first release sheet has a surface area smaller than a surface area of the second release sheet.

Abstract: A polishing-pad laminated structure which allows for easy alignment of a through-hole of a polishing pad with a sensor head installed in a polishing table is disclosed. The polishing-pad laminated structure includes a polishing pad and a release sheet. The polishing pad has a through-hole located at a position corresponding to a position of a sensor head disposed in the polishing table. The release sheet covers an adhesive surface of the polishing pad. The release sheet is divided into at least a first release sheet and a second release sheet. The first release sheet has a surface area smaller than a surface area of the second release sheet.

Abstract: A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Abstract: A method of polishing a wafer having a Ru film and a Ta film or TaN film beneath the Ru film is provided. This polishing method includes: polishing the Ru film by bringing the wafer into sliding contact with a polishing pad; measuring a thickness of the Ru film by a film thickness sensor while polishing the Ru film; calculating a derivative value of an output value of the film thickness sensor; detecting a predetermined point of change in the derivative value; and determining a removal point of the Ru film from a point of time when the point of change is detected.

Abstract: A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

Abstract: A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

Abstract: A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to planarize the metal film of the substrate. The process unit may comprise a wet process unit configured to dissolve the native oxide of the metal film in a chemical liquid or a dry process unit configured to reduce or etch the native oxide of the metal film with a gas.