Patents by Inventor Toshikazu Ohnishi

Toshikazu Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6908356
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: June 21, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome
  • Patent number: 6890231
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Grant
    Filed: February 12, 2004
    Date of Patent: May 10, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome
  • Patent number: 6848961
    Abstract: A method and an apparatus of manufacturing an image displaying apparatus having an electron source substrate and a phosphor substrate. The electron source substrate is provided with an electron emitting element formed by covering with a container and by applying a voltage to an electronic conductor on the substrate. While, the phosphor substrate is provided with a phosphor thereon. The substrates are subjected to a getter processing and to a seal bonding process under a vacuum condition through a processing chamber, to complete an image forming apparatus. An improvement resides in miniaturizing and simplifying operation, and in greater manufacture speed and mass production.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: February 1, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ichiro Nomura, Kohei Nakata, Tetsuya Kaneko, Toshihiko Miyazaki, Yasue Sato, Toshikazu Ohnishi
  • Publication number: 20050009433
    Abstract: A method and an apparatus of manufacturing an image displaying apparatus having an electron source substrate and a phosphor substrate. The electron source substrate is provided with an electron emitting element formed by covering with a container and by applying a voltage to an electronic conductor on the substrate. While, the phosphor substrate is provided with a phosphor thereon. The substrates are subjected to a getter processing and to a seal bonding process under a vacuum condition through a processing chamber, to complete an image forming apparatus. An improvement resides in miniaturizing and simplifying operation, and in greater manufacture speed and mass production.
    Type: Application
    Filed: August 9, 2004
    Publication date: January 13, 2005
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Ichiro Nomura, Kohei Nakata, Tetsuya Kaneko, Toshihiko Miyazaki, Yasue Sato, Toshikazu Ohnishi
  • Patent number: 6824437
    Abstract: A method of manufacturing an electron-emitting device has a step of forming a pair of conductors on a substrate, the conductors being spaced from each other, and an activation process of depositing carbon or carbon compound on at least one side of the pair of conductors in an atmosphere of carbon compound gas. The activation process includes a plurality of processes of two or more stages including a first process and a second process. The first process is executed in an atmosphere of the carbon compound gas having a partial pressure higher than a partial pressure of the gas in the second process, with the second process being the last activation process.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: November 30, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuhiro Jindai, Toshikazu Ohnishi
  • Patent number: 6802752
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: October 12, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome
  • Patent number: 6780073
    Abstract: A method of manufacturing an electron-emitting device includes a process for forming a pair of electric conductors spaced from each other on a substrate, and an activation process for forming a film of carbon or a carbon compound on at least one of the pair of electric conductors. The activation process is sequentially performed within plural containers having different atmospheres.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: August 24, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Miki Tamura, Toshikazu Ohnishi, Kazuhiro Jindai
  • Publication number: 20040161998
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Application
    Filed: February 12, 2004
    Publication date: August 19, 2004
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hisetoshi Suzuki, Yoshikazu Banno, Take Ono, Masanori Mitome
  • Patent number: 6752676
    Abstract: A method for producing an electron-emitting device having an electroconductive film with an electron-emitting region extending between plural electrodes, includes a step of forming the electron-emitting region in the electroconductive film, including a step of heating the electroconductive film, and a step of energizing the electroconductive film in an atmosphere in which a gas for promoting cohesion of the electroconductive film exists.
    Type: Grant
    Filed: February 16, 1999
    Date of Patent: June 22, 2004
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masataka Yamashita, Hisaaki Kawade, Toshikazu Ohnishi, Tatsuya Iwasaki, Takeo Ono
  • Publication number: 20040082249
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Application
    Filed: July 10, 2003
    Publication date: April 29, 2004
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome
  • Publication number: 20030222570
    Abstract: An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite-film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
    Type: Application
    Filed: March 20, 2003
    Publication date: December 4, 2003
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Fumio Kishi, Masato Yamanobe, Takeo Tsukamoto, Toshikazu Ohnishi, Keisuke Yamamoto, Sotomitsu Ikeda, Yasuhiro Hamamoto, Kazuya Miyazaki
  • Publication number: 20030164409
    Abstract: A fluid mixing apparatus that mixes a plurality of fluids and switches between supply and stop of these fluid, which is able to reduce the degree of retention of the fluid and mix the fluid smoothly. Even in the case where the flow rate of another fluid is larger than the flow rate of the one fluid or even in the case where the fluid is repeatedly supplied and stopped, since a tip end of a nozzle provided at a fluid exhausting portion of the switching valve is disposed at a center portion of flow of the one fluid, another fluid and the one fluid can be mixed quickly with a simple configuration.
    Type: Application
    Filed: March 4, 2002
    Publication date: September 4, 2003
    Applicant: HORIBA, LTD.
    Inventors: Toshikazu Ohnishi, Yoshiyuki Sawada, Seiichi Taniguchi, Yoshimi Matsuura
  • Patent number: 6608437
    Abstract: An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cm−1 is greater than a peak (P1) located in the vicinity of 1,335 cm−1 or 2) the half-width of a peak (P1) located in the vicinity of 1,335 cm−1 is not greater than 150 cm−1.
    Type: Grant
    Filed: November 20, 2000
    Date of Patent: August 19, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Fumio Kishi, Masato Yamanobe, Takeo Tsukamoto, Toshikazu Ohnishi, Keisuke Yamamoto, Sotomitsu Ikeda, Yasuhiro Hamamoto, Kazuya Miyazaki
  • Patent number: 6582268
    Abstract: A method of manufacturing an electron-emitting device has a step of forming a pair of conductors on a substrate, the conductors being spaced from each other, and an activation process of depositing carbon or carbon compound on at least one side of the pair of conductors in an atmosphere of carbon compound gas. The activation process includes a plurality of processes of two or more stages including a first process and a second process. The first process is executed in an atmosphere of the carbon compound gas having a partial pressure higher than a partial pressure of the gas in the second process, with the second process being the last activation process.
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: June 24, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuhiro Jindai, Toshikazu Ohnishi
  • Publication number: 20030104751
    Abstract: A method of manufacturing an electron-emitting device has a step of forming a pair of conductors on a substrate, the conductors being spaced from each other, and an activation process of depositing carbon or carbon compound on at least one side of the pair of conductors in an atmosphere of carbon compound gas The activation process includes a plurality of processes of two or more stages including a first process and a second process. The first process is executed in an atmosphere of the carbon compound gas having a partial pressure higher than a partial process of the second process used as a last activation process.
    Type: Application
    Filed: December 17, 2002
    Publication date: June 5, 2003
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Kazuhiro Jindai, Toshikazu Ohnishi
  • Publication number: 20020127941
    Abstract: The present invention provides a method of manufacturing an electron-emitting device, comprising a process for forming a pair of electric conductors spaced from each other on a substrate, and an activation process for forming a film of carbon or a carbon compound on at lease one of the pair of electric conductors, wherein the activation process is sequentially performed within plural containers having different atmospheres.
    Type: Application
    Filed: April 2, 2002
    Publication date: September 12, 2002
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Miki Tamura, Toshikazu Ohnishi, Kazuhiro Jindai
  • Patent number: 6419539
    Abstract: A method of manufacturing an electron-emitting device includes a process for forming a pair of electric conductors spaced from each other on a substrate, and an activation process for forming a film of carbon or a carbon compound on at least one of the pair of electric conductors. The activation process is sequentially performed within plural containers having different atmospheres.
    Type: Grant
    Filed: February 24, 2000
    Date of Patent: July 16, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Miki Tamura, Toshikazu Ohnishi, Kazuhiro Jindai
  • Patent number: 6384541
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: May 7, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome
  • Publication number: 20020016124
    Abstract: A method for producing an electron-emitting device comprising an electroconductive film having an electron-emitting region between electrodes, wherein a step of forming the electron-emitting region in the electroconductive film comprises a step of heating the electroconductive film and a step of energizing the electroconductive film, in an atmosphere in which a gas for promoting cohesion of the electroconductive film exists.
    Type: Application
    Filed: February 16, 1999
    Publication date: February 7, 2002
    Inventors: MASATAKA YAMASHITA, HISAAKI KAWADE, TOSHIKAZU OHNISHI, TATSUYA IWASAKI, TAKEO ONO
  • Patent number: 6344711
    Abstract: An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
    Type: Grant
    Filed: February 25, 2000
    Date of Patent: February 5, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshikazu Ohnishi, Masato Yamanobe, Ichiro Nomura, Hidetoshi Suzuki, Yoshikazu Banno, Takeo Ono, Masanori Mitome