Patents by Inventor Toshikazu Oue

Toshikazu Oue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-frequency power amplifier
    Patent number: 7511575
    Abstract: A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.
    Type: Grant
    Filed: March 6, 2007
    Date of Patent: March 31, 2009
    Assignee: Mitsubishi Electric Corporation
    Inventors: Seiki Gotou, Akira Inoue, Tetsuo Kunii, Toshikazu Oue
  • HIGH-FREQUENCY POWER AMPLIFIER
    Publication number: 20080094141
    Abstract: A high-frequency power amplifier has an FET element having a unit FETs in multifinger form, and having a gate pad through which a signal is input, a source pad that is grounded, and a drain pad through which a signal is output. A high-frequency processing circuit includes series resonance circuits shunt-connected between the gate pads of the unit FETs and grounding ends. Two of the series resonance circuits have respective different resonance frequencies which correspond to second and higher harmonics of a frequency included in the operating frequency band of the FET element.
    Type: Application
    Filed: March 6, 2007
    Publication date: April 24, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Seiki GOTOU, Akira INOUE, Tetsuo KUNII, Toshikazu OUE