Abstract: An electrical resistance type humidity sensor is herein disclosed which comprises a humidity sensor in which electrodes are formed on a woodceramics substrate having linear characteristics with humidity, and a temperature sensor for temperature correction in which electrodes are formed on other woodceramics substrate having the identical characteristics as in the woodceramics humidity sensor and a film coating of a nonhygroscopic material is formed on the surface of the substrate. Thus, a resistance value measured by the woodceramics humidity sensor is corrected on the basis of a resistance value measured by the woodceramics temperature sensor to obtain an output voltage in proportion to a relative humidity. A structure insensitive to a humidity formed from all the same material i.e.

Abstract: An apparatus for use in semiconductor fabrication that includes use of a photo-excitation process and is provided with a revolving gas chamber for forming spiral vortices flow of purge gas located at the upper or side part of a gas reaction chamber, an internal or external light source, a partition having a centrally located circular opening provided between the revolving gas chamber and the gas reaction chamber, or without the partition when the revolving gas chamber is made smaller than the gas reaction chamber. The revolving gas chamber has a multiplicity of gas inlets oriented at an angle with respect to the center of the revolving gas chamber to produce a gas flow in one direction to form spiral vortices that revolves and thereby prevents the light source or light transmitting window from becoming contaminated by process reactions.

Abstract: A method of producing II-V compound semiconductors with greatly reduced intrinsic defect levels comprises the step of causing atoms or ions of at least one member selected from the group consisting of hydrogen and the halogens to be injected into and diffused through II-V compound semiconductors during or after the production thereof.