Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.

Abstract: A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 ?m/h or more from an initial growth stage.

Abstract: This SiC epitaxial wafer includes: a SiC single crystal substrate of which a main surface has an off-angle of 0.4° to 5° with respect to (0001) plane; and an epitaxial layer provided on the SiC single crystal substrate, wherein the epitaxial layer has a basal plane dislocation density of 0.1 pieces/cm2 or less that is a density of basal plane dislocations extending from the SiC single crystal substrate to an outer surface and an intrinsic 3C triangular defect density of 0.1 pieces/cm2 or less.

Abstract: A SiC Schottky-barrier diode and a SiPiN diode are connected in parallel. Due to a difference in their thermal properties, a relatively large current flows in the SiPiN diode at a high temperature in which electro migration progresses easily in a solder layer, and the progression of the electro migration is suppressed. At a low temperature in which the electro migration does not progress so much, only a relatively small current flows in the SiPiN diode, and a loss suppression by the SiC Schottky-barrier diode is achieved.

Abstract: A SiC Schottky-barrier diode and a SiPiN diode are connected in parallel. Due to a difference in their thermal properties, a relatively large current flows in the SiPiN diode at a high temperature in which electro migration progresses easily in a solder layer, and the progression of the electro migration is suppressed. At a low temperature in which the electro migration does not progress so much, only a relatively small current flows in the SiPiN diode, and a loss suppression by the SiC Schottky-barrier diode is achieved.

Abstract: A four-wheel drive vehicle includes a crankshaft that obtains the power of the engine. The rotation driving force of the crankshaft is transmitted to a secondary shaft through a belt type continuously variable transmission. The rotation driving force of the secondary shaft is transmitted to a rear wheel by a second drive shaft. A cam chain is arranged between the crank web of the crankshaft and the driving pulley of the belt type continuously variable transmission. The second drive shaft is arranged between the crank web and the driving pulley and under the cam chain. The second drive shaft is arranged to at least partly overlap the rotation trajectory C1 of the driving pulley when seen in a side view.

Abstract: A four-wheel drive vehicle includes a crankshaft that obtains the power of the engine. The rotation driving force of the crankshaft is transmitted to a secondary shaft through a belt type continuously variable transmission. The rotation driving force of the secondary shaft is transmitted to a rear wheel by a second drive shaft. A cam chain is arranged between the crank web of the crankshaft and the driving pulley of the belt type continuously variable transmission. The second drive shaft is arranged between the crank web and the driving pulley and under the cam chain. The second drive shaft is arranged to at least partly overlap the rotation trajectory C1 of the driving pulley when seen in a side view.

Abstract: An engine features a decompression mechanism that extends through a bore formed in a camshaft. The mechanism has an actuator that is formed of multiple shafts. The shafts are joined in the region of a decompression pin. The actuator rotates relative to the camshaft and the rotation drives translation of decompression pins in a radial direction of the camshaft.

Abstract: An engine features a decompression mechanism that extends through a bore formed in a camshaft. The mechanism has an actuator that is formed of multiple shafts. The shafts are joined in the region of a decompression pin. The actuator rotates relative to the camshaft and the rotation drives translation of decompression pins in a radial direction of the camshaft.

Abstract: A method for cleaning a process chamber of a plasma treatment device includes introducing gas that has been activated with a remote plasma source into a process chamber, reactivating the activated gas in the process chamber, reacting the reactivated gas with a deposit inside the process chamber and exhausting the reacted gas.

Abstract: The invention provides a method for removing the harmful effects of organic halogen compound gas, in which an organic halogen compound gas (20) discharged by a production unit (8) is transferred into an organic halogen compound-decomposing unit (4) via an adsorbing part (6) that contains an adsorbent (60), followed by decomposing the organic halogen compound gas (20) in the organic halogen compound-decomposing unit (4), and provides an apparatus for removing the harmful effects of organic halogen compound gas, a system for fabricating semiconductor devices, and a method for fabricating semiconductor devices.

Abstract: The invention provides a method for measuring PFC components in a discharged gas with ease and good reproducibility, using an FT-IR. The method for measuring greenhouse gases using an infrared absorption spectrometer in accordance with the present invention includes the steps of selecting a process chemical material, selecting a measurement target chemical material corresponding to the process chemical material, designating expected concentration ranges for the process chemical material and the measurement target chemical material, selecting libraries for the respective expected concentration ranges for the process chemical material and the measurement target chemical material, and analyzing data obtained by a gas infrared absorption spectrometry based on the libraries.

Abstract: The invention provides a method for removing the harmful effects of organic halogen compound gas, in which an organic halogen compound gas (20) discharged by a production unit (8) is transferred into an organic halogen compound-decomposing unit (4) via an adsorbing part (6) that contains an adsorbent (60), followed by decomposing the organic halogen compound gas (20) in the organic halogen compound-decomposing unit (4), and provides an apparatus for removing the harmful effects of organic halogen compound gas, a system for fabricating semiconductor devices, and a method for fabricating semiconductor devices.

Abstract: The invention provides a method for measuring PFC components in a discharged gas with ease and good reproducibility, using an FT-IR. The method for measuring greenhouse gases using an infrared absorption spectrometer in accordance with the present invention includes the steps of selecting a process chemical material, selecting a measurement target chemical material corresponding to the process chemical material, designating expected concentration ranges for the process chemical material and the measurement target chemical material, selecting libraries for the respective expected concentration ranges for the process chemical material and the measurement target chemical material, and analyzing data obtained by a gas infrared absorption spectrometry based on the libraries.