Patents by Inventor Toshikazu TERASHIMA

Toshikazu TERASHIMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11616479
    Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.
    Type: Grant
    Filed: April 3, 2020
    Date of Patent: March 28, 2023
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toshikazu Terashima, Fumio Harima, Makoto Itou, Satoshi Tanaka, Kazuo Watanabe, Satoshi Arayashiki, Chikara Yoshida
  • Publication number: 20220263477
    Abstract: A power amplifier circuit includes a first transistor having the base coupled to an input terminal, the collector coupled to an output terminal, and the emitter coupled to ground, a first bias circuit coupled to the base of the first transistor via the first resistance element, a second transistor having the base coupled to the input terminal, the collector coupled to the output terminal, and the emitter coupled to ground, a second bias circuit coupled to the base of the second transistor via the second resistance element, and a first impedance circuit having a first end coupled between the base of the first transistor and the input terminal and a second end coupled between the first bias circuit and the first resistance element and being configured to be opened for a direct-current component and to be closed for an alternating-current component.
    Type: Application
    Filed: February 11, 2022
    Publication date: August 18, 2022
    Inventors: Toshikazu TERASHIMA, Yuri HONDA, Takashi YAMADA
  • Patent number: 11245365
    Abstract: A power amplifier circuit includes a first transistor, a capacitor, and a second transistor. The first transistor has an emitter electrically connected to a reference potential, a base, and a collector electrically connected to a first power supply potential. A first end of the capacitor is electrically connected to the collector of the first transistor. The second transistor has an emitter electrically connected to a second end of the capacitor and electrically connected to the reference potential, a base, and a collector electrically connected to the first power supply potential. An RF output signal obtained by amplifying the RF input signal is output from the collector of the second transistor. A second bias circuit includes a third transistor having a collector electrically connected to a second power supply potential, a base, and an emitter from which the second bias current or voltage is output.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: February 8, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toshikazu Terashima, Satoshi Tanaka, Kazuo Watanabe, Makoto Itou, Jun Enomoto
  • Patent number: 11152893
    Abstract: A power amplifying circuit includes a first amplifying unit that amplifies a first radio-frequency signal and a second amplifying unit that amplifies a second radio-frequency signal. The first amplifying unit includes a first matching circuit that performs impedance matching for a circuit in a preceding stage, and a first amplifying circuit that amplifies the first radio-frequency signal that has passed through the first matching circuit. The second amplifying unit includes a second matching circuit that performs impedance matching for the circuit in the preceding stage, a resistor including a first end and a second end, the first end being electrically connected to the second matching circuit, and a second amplifying circuit that is electrically connected to the second end of the resistor and that amplifies the second radio-frequency signal that has passed through the resistor.
    Type: Grant
    Filed: October 1, 2019
    Date of Patent: October 19, 2021
    Assignee: MURATA MANUFACTURING CO. , LTD.
    Inventors: Takashi Yamada, Toshikazu Terashima, Yuuki Oomae
  • Publication number: 20200321927
    Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 8, 2020
    Inventors: Toshikazu TERASHIMA, Fumio HARIMA, Makoto ITOU, Satoshi TANAKA, Kazuo WATANABE, Satoshi ARAYASHIKI, Chikara YOSHIDA
  • Publication number: 20200313629
    Abstract: A power amplifier circuit includes a first transistor, a capacitor, and a second transistor. The first transistor has an emitter electrically connected to a reference potential, a base, and a collector electrically connected to a first power supply potential. A first end of the capacitor is electrically connected to the collector of the first transistor. The second transistor has an emitter electrically connected to a second end of the capacitor and electrically connected to the reference potential, a base, and a collector electrically connected to the first power supply potential. An RF output signal obtained by amplifying the RF input signal is output from the collector of the second transistor. A second bias circuit includes a third transistor having a collector electrically connected to a second power supply potential, a base, and an emitter from which the second bias current or voltage is output.
    Type: Application
    Filed: March 24, 2020
    Publication date: October 1, 2020
    Inventors: Toshikazu TERASHIMA, Satoshi TANAKA, Kazuo WATANABE, Makoto ITOU, Jun ENOMOTO
  • Publication number: 20200106389
    Abstract: A power amplifying circuit includes a first amplifying unit that amplifies a first radio-frequency signal and a second amplifying unit that amplifies a second radio-frequency signal. The first amplifying unit includes a first matching circuit that performs impedance matching for a circuit in a preceding stage, and a first amplifying circuit that amplifies the first radio-frequency signal that has passed through the first matching circuit. The second amplifying unit includes a second matching circuit that performs impedance matching for the circuit in the preceding stage, a resistor including a first end and a second end, the first end being electrically connected to the second matching circuit, and a second amplifying circuit that is electrically connected to the second end of the resistor and that amplifies the second radio-frequency signal that has passed through the resistor.
    Type: Application
    Filed: October 1, 2019
    Publication date: April 2, 2020
    Inventors: Takashi YAMADA, Toshikazu TERASHIMA, Yuuki OOMAE