Abstract: A technology is provided for handling signals with defined power levels that are received at an antenna port. The signals can be received at a first antenna port, wherein the first antenna port is coupled to a plurality of PIN diodes positioned in parallel in between one or more transmission lines with a defined impedance. The defined power levels associated with the signals can be determined to exceed a predetermined threshold. The signals with the defined power levels that exceed the predetermined threshold can be redirected to a second antenna port, wherein the second antenna port is coupled to the plurality of PIN diodes positioned in parallel in between the one or more transmission lines with the defined impedance.

Abstract: A technology is provided for handling signals with defined power levels that are received at an antenna port. The signals can be received at a first antenna port, wherein the first antenna port is coupled to a plurality of PIN diodes positioned in parallel in between one or more transmission lines with a defined impedance. The defined power levels associated with the signals can be determined to exceed a predetermined threshold. The signals with the defined power levels that exceed the predetermined threshold can be redirected to a second antenna port, wherein the second antenna port is coupled to the plurality of PIN diodes positioned in parallel in between the one or more transmission lines with the defined impedance.

Abstract: A transceiver module includes a bi-directional amplifier having a pair of symmetric signal paths for amplification of both transmit and receive signals is described. The amplifier is a bi-directional amplifier and includes a pair of symmetric signal paths. The amplifier is disposed between a pair of r.f. switches to provide a pair of signal paths between two terminals of the module. A phase shifter is coupled between one of the terminals of the module and one of the r.f. switches, wherein the second terminal of the module is coupled directly to the other one of the pair of switches.

Abstract: A module for constructing a modular transmitter is disclosed. The module contains antenna elements along the front edge of a base. RF circuitry is fabricated on both the top and the bottom sides of the base. The base contains heat pipes to carry heat away from RF circuitry. The base is made to be plugged into a mounting block which provides electrical signals to the module and acts as a sink for the heat removed by the heat pipes.

Abstract: Built in test circuitry for an array transmitter. The circuitry includes a directional coupler with directivity equal to the mutual coupling between adjacent antenna elements. The direct input port of the coupler is connected to the antenna element and the direct output port of the coupler is connected to the circuitry generating the signal transmitted by the antenna element. The coupled port of the coupler feeds a detector which in turn provides an input to a control circuit. This circuit can be controlled to test, for each antenna element, the RF power driving each antenna element, the effective power radiated from each element, and the operation of the phase shifter coupled to each antenna element.

Abstract: A transceiver module includes a bi-directional amplifier having a pair of symmetric signal paths for amplification of both transmit and receive signals is described. The amplifier is a bi-directional amplifier and includes a pair of symmetric signal paths. The amplifier is disposed between a pair of r.f. switches to provide a pair of signal paths between two terminals of the module. A phase shifter is coupled between on of the terminals of the module and one of the r.f. switches, wherein the second terminal of the module is coupled directly to the other one of the pair of switches.

Abstract: A radio frequency switch disposed over a substrate having ground plane conductors disposed over an opposite surface thereof is described. The switch has at least two terminals, and includes a plurality of pairs of transistors, each one of said transistors coupled between a reference potential and a common transmission line which is coupled to one of the pair of terminals. A pair of topside conductors are disposed over the substrate to couple the transistors through plated vias to a bottom ground plane conductor. The switch further includes a series connected transistor disposed between the r.f. line and a second one of the terminals of the circuit.

Abstract: A programmable attenuator includes a plurality of field effect transistors (FETS) arranged together to provide an attenuation network. Each one of the FETS has a plurality of cell portions, each cell portion having drain, gate and source regions, the source and drain regions of the cell portions being connected in parallel. A first selected portion of the gate regions of each one of said FETS is connected to a gate electrode. A second selected remaining portion of the gate regions of each one of the FETS has the gate regions thereof physically isolated from the gate electrode. A signal fed to the gate electrode of each FET is distributed to the connected gate regions of each field effect transistor. In response to such signal, the total drain-source resistance of such FET is changed between a predetermined low value and a predetermined high value, with the resistance of the predetermined high value being determined, in part, by the number of such isolated gate regions.

Abstract: A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and an output terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between a second input terminal and said output terminal. Separate bias circuits are provided to the input electrodes of the first and second channels. Bias signals fed to the bias circuits and coupled to the input electrodes place the FETS in an "on" state to provide gain to r.f. input signals fed thereto, or in a "pinch-off" state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 2.times.1 switch or a two way active r.f. combiner which provides gain to a signal is provided.

Abstract: A programmable attenuator includes a plurality of field effect transistors (FETS) arranged together to provide an attenuation network. Each one of the FETS has a plurality of cell portions, each cell portion having drain, gate and source regions, the source and drain regions of the cell portions being connected in parallel. A first selected portion of the gate regions of each one of said FETS is connected to a gate electrode. A second selected remaining portion of the gate regions of each one of the FETS has the gate regions thereof isolated from the gate electrode. A signal fed to the gate electrode of each FET is distributed to the connected gate regions of each field effect transistor. In response to such signal, the total drain-source resistance of such FET is changed between a predetermined low value and a predetermined high value, with the resistance of the predetermined high value being determined, in part, by the number of such isolated gate regions.

Abstract: A microwave circuit device package including a conductive housing and selectively interchangeable transmission line sections each one thereof being disposable in such housing and means for tuning and matching the impedance of the disposed transmission line section to the impedance of a device connected thereto over a relatively wide frequency band of applied signals. Such tuning means includes a conductive member of predetermined dimensions slidably mounted in proximity to a selected conductor portion of one of such transmission line sections. Such transmission line sections include a straight continuous in-line configuration for high frequencies or serpentine strip conductor configurations for low and intermediate frequencies, each one of such serpentine strip conductor configurations defining a different acute angle relative to the conductive member. The microwave circuit housing is used to test, calibrate, evaluate or characterize the properties of the connected device over the wide frequency bandwidths.