Patents by Inventor Toshiki HINATA
Toshiki HINATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136148Abstract: In one embodiment, a beam detector includes a first aperture plate including a first passage hole, a second aperture plate including a second passage hole that allows a single detection target beam passing through the first passage hole to pass therethrough, and a sensor detecting a beam current of the detection target beam passing through the second passage hole. The second aperture plate includes an electrically conductive material, a plurality of third passage holes are formed around the second passage hole, and the plurality of third passage holes allow light to pass therethrough.Type: ApplicationFiled: September 4, 2023Publication date: April 25, 2024Applicant: NuFlare Technology, Inc.Inventors: Yasutaka SATO, Hironori MIZOGUCHI, Toru HINATA, Toshiki KIMURA, Kiminobu AKENO
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Patent number: 11761075Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.Type: GrantFiled: October 25, 2016Date of Patent: September 19, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yukimasa Saito, Toshiki Hinata, Kazuya Dobashi, Kyoko Ikeda, Shuji Moriya
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Patent number: 10786837Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).Type: GrantFiled: October 20, 2016Date of Patent: September 29, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yukimasa Saito, Toshiki Hinata, Kazuya Dobashi, Kyoko Ikeda, Shuji Moriya
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Publication number: 20190006207Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.Type: ApplicationFiled: August 28, 2018Publication date: January 3, 2019Inventors: Manabu AMIKURA, Toshiki HINATA
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Publication number: 20180369881Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).Type: ApplicationFiled: October 20, 2016Publication date: December 27, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yukimasa SAITO, Toshiki HINATA, Kazuya DOBASHI, Kyoko IKEDA, Shuji MORIYA
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Publication number: 20180355465Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.Type: ApplicationFiled: October 25, 2016Publication date: December 13, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yukimasa SAITO, Toshiki HINATA, Kazuya DOBASHI, Kyoko IKEDA, Shuji MORIYA
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Patent number: 10096495Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.Type: GrantFiled: December 16, 2015Date of Patent: October 9, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Manabu Amikura, Toshiki Hinata
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Publication number: 20160189987Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.Type: ApplicationFiled: December 16, 2015Publication date: June 30, 2016Inventors: Manabu AMIKURA, Toshiki HINATA