Abstract: A valve open-close timing control device includes a driving rotator, a driven rotator, a phase adjusting mechanism, a sensor unit, a storage configured to store the plurality of divided regions consecutively provided, as a plurality of divided length information pieces corresponding to divided lengths of the divided regions, and an actual phase acquisition unit configured to start acquisition of the crank angle signal and the cam angle signal along with start of actuation control of actuating the internal combustion engine, specify one of the divided regions by referring to the divided length information pieces stored in the storage in accordance with the crank angle signal at timing set in accordance with the cam angle signal, and acquire the relative rotation phase as an actual phase in accordance with the crank angle signal corresponding to the boundary of the divided region thus specified and the reference crank angle signal.

Abstract: A valve open-close timing control device includes a driving rotator, a driven rotator, a phase adjusting mechanism, a sensor unit, a storage configured to store the plurality of divided regions consecutively provided, as a plurality of divided length information pieces corresponding to divided lengths of the divided regions, and an actual phase acquisition unit configured to start acquisition of the crank angle signal and the cam angle signal along with start of actuation control of actuating the internal combustion engine, specify one of the divided regions by referring to the divided length information pieces stored in the storage in accordance with the crank angle signal at timing set in accordance with the cam angle signal, and acquire the relative rotation phase as an actual phase in accordance with the crank angle signal corresponding to the boundary of the divided region thus specified and the reference crank angle signal.

Abstract: A protection film is formed on a semiconductor substrate. Impurity ions are implanted into the semiconductor substrate through the protection film. The impurity is activated to form an impurity layer. The protection film is removed after forming the impurity layer. The semiconductor substrate of a surface portion of the impurity layer is removed after removing the protection film. A semiconductor layer is epitaxially grown above the semiconductor substrate after removing the semiconductor substrate of the surface portion of the impurity layer.

Abstract: The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.

Abstract: A protection film is formed on a semiconductor substrate. Impurity ions are implanted into the semiconductor substrate through the protection film. The impurity is activated to form an impurity layer. The protection film is removed after forming the impurity layer. The semiconductor substrate of a surface portion of the impurity layer is removed after removing the protection film. A semiconductor layer is epitaxially grown above the semiconductor substrate after removing the semiconductor substrate of the surface portion of the impurity layer.

Abstract: The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.

Abstract: A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.

Abstract: A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.